View source for 18138877. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Soo Jin Jeong of Suwon-si (KR)|Soo Jin Jeong of Suwon-si (KR)]][[Category:Soo Jin Jeong of Suwon-si (KR)]]

[[:Category:Myung Gil Kang of Suwon-si (KR)|Myung Gil Kang of Suwon-si (KR)]][[Category:Myung Gil Kang of Suwon-si (KR)]]

[[:Category:Tae Gon Kim of Suwon-si (KR)|Tae Gon Kim of Suwon-si (KR)]][[Category:Tae Gon Kim of Suwon-si (KR)]]

[[:Category:Dong Won Kim of Suwon-si (KR)|Dong Won Kim of Suwon-si (KR)]][[Category:Dong Won Kim of Suwon-si (KR)]]

[[:Category:Ju Ri Lee of Suwon-si (KR)|Ju Ri Lee of Suwon-si (KR)]][[Category:Ju Ri Lee of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18138877 titled 'SEMICONDUCTOR DEVICE

==Simplified Explanation==

The semiconductor device described in the patent application includes an active pattern with a lower pattern and multiple sheet patterns spaced apart from the lower pattern in one direction. There are also first and second structures arranged on the lower pattern, spaced apart from each other in another direction. A source/drain recess is defined between the first and second gate structures, and a source/drain pattern fills the recess, with a stacking fault spaced apart from the lower pattern.

* The active pattern of the semiconductor device includes a lower pattern and multiple sheet patterns.
* First and second structures are arranged on the lower pattern, spaced apart from each other.
* A source/drain recess is defined between the first and second gate structures.
* A source/drain pattern fills the recess, with a stacking fault spaced apart from the lower pattern.

Potential applications of this technology:
* Semiconductor devices with improved performance and functionality.
* Enhanced integration of active patterns and gate structures.
* Improved source/drain patterns for better electrical conductivity.

Problems solved by this technology:
* Overcoming limitations in the design and fabrication of semiconductor devices.
* Addressing challenges in integrating different patterns and structures.
* Improving the performance and reliability of source/drain patterns.

Benefits of this technology:
* Increased efficiency and functionality of semiconductor devices.
* Enhanced electrical conductivity and performance.
* Improved reliability and durability of the source/drain patterns.


==Original Abstract Submitted==

A semiconductor device includes an active pattern having a lower pattern, and a plurality of sheet patterns spaced apart from the lower pattern in a first direction; first and second structures disposed on the lower pattern, wherein the first and second structures are arranged and spaced apart from each other in a second direction; a source/drain recess defined between first and second gate structures; and a source/drain pattern filling the source/drain recess, wherein the source/drain pattern includes a stacking fault spaced apart from the lower pattern.



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