View source for 18131735. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR DEVICES=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Sanghoon Uhm of Suwon-si (KR)|Sanghoon Uhm of Suwon-si (KR)]][[Category:Sanghoon Uhm of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18131735 titled 'SEMICONDUCTOR DEVICES

==Simplified Explanation==

The semiconductor device described in the patent application includes several components such as bit lines, gate electrodes, a gate insulation pattern, a channel structure, a metal oxide pattern, and a metal pattern. These components are all located on a substrate.

Key points of the patent/application:

* Bit lines are present and extend in one direction, while being spaced apart from each other in another direction.
* Gate electrodes are positioned on the bit lines, spaced apart from each other in the first direction, and extend in the second direction.
* A gate insulation pattern is formed on the sidewall of the gate electrodes in the first direction.
* A channel structure is formed on the sidewall of the gate insulation pattern in the first direction.
* A metal oxide pattern is formed on the sidewall of the channel structure in the first direction.
* A metal pattern is formed on the sidewall of the metal oxide pattern in the first direction.

Potential applications of this technology:

* Semiconductor devices with improved performance and functionality.
* Enhanced memory devices with increased storage capacity.
* More efficient and reliable integrated circuits.
* Advanced electronic devices with smaller form factors.

Problems solved by this technology:

* Improved integration and miniaturization of semiconductor components.
* Enhanced electrical conductivity and signal transmission.
* Reduction of power consumption and heat generation.
* Increased reliability and durability of semiconductor devices.

Benefits of this technology:

* Higher performance and functionality in semiconductor devices.
* Increased storage capacity and data processing capabilities.
* Improved energy efficiency and reduced power consumption.
* Enhanced reliability and durability of electronic devices.


==Original Abstract Submitted==

A semiconductor device includes bit lines, gate electrodes, a gate insulation pattern, a channel structure, a metal oxide pattern and a metal pattern on a substrate. The bit lines extend in a first direction and are spaced apart from each other in a second direction. The gate electrodes are disposed on the bit lines, spaced apart from each other in the first direction, and extend in the second direction. The gate insulation pattern is formed on a sidewall in the first direction of the gate electrodes. The channel structure is formed on a sidewall in the first direction of the gate insulation pattern. The metal oxide pattern is formed on a sidewall in the first direction of the channel structure. The metal pattern is formed on a sidewall in the first direction of the metal oxide pattern.



[[Category:H10B12/00]]