View source for 18125870. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Dong-Gwan Shin of Suwon-si (KR)|Dong-Gwan Shin of Suwon-si (KR)]][[Category:Dong-Gwan Shin of Suwon-si (KR)]]

[[:Category:Yong Hee Park of Suwon-si (KR)|Yong Hee Park of Suwon-si (KR)]][[Category:Yong Hee Park of Suwon-si (KR)]]

[[:Category:Hong Seon Yang of Suwon-si (KR)|Hong Seon Yang of Suwon-si (KR)]][[Category:Hong Seon Yang of Suwon-si (KR)]]

[[:Category:Hye In Chung of Suwon-si (KR)|Hye In Chung of Suwon-si (KR)]][[Category:Hye In Chung of Suwon-si (KR)]]

[[:Category:Pan Kwi Park of Suwon-si (KR)|Pan Kwi Park of Suwon-si (KR)]][[Category:Pan Kwi Park of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18125870 titled 'SEMICONDUCTOR DEVICE

==Simplified Explanation==

The abstract describes a semiconductor device with specific features and configurations. It includes an active pattern with a first impurity of a certain conductivity, as well as first and second nanosheets on the active pattern. A gate electrode surrounds each of the nanosheets, and a lower source/drain region is present on the active pattern. The lower surface of the second nanosheet is higher than the uppermost surface of the lower source/drain region, which is doped with a second impurity of the first conductivity. An upper source/drain region, doped with a third impurity of a different conductivity, is located on the lower source/drain region. A gate insulation layer is positioned between the gate electrode and the lower and upper source/drain regions, making contact with both regions.

* The semiconductor device has an active pattern with nanosheets and specific impurity doping.
* The gate electrode surrounds the nanosheets, providing control over their behavior.
* The lower source/drain region is positioned below the second nanosheet, creating a unique configuration.
* The lower source/drain region is doped with a second impurity, while the upper source/drain region is doped with a third impurity of a different conductivity.
* The gate insulation layer separates the gate electrode from the source/drain regions, ensuring proper functioning.

== Potential Applications ==
* This semiconductor device could be used in various electronic devices, such as smartphones, tablets, and computers.
* It may find applications in the field of integrated circuits, enabling more efficient and compact designs.

== Problems Solved ==
* The configuration of the lower source/drain region being below the second nanosheet allows for improved performance and functionality of the device.
* The specific impurity doping and nanosheet design contribute to enhanced conductivity and control over the device's behavior.
* The gate insulation layer ensures proper isolation and functioning of the gate electrode and source/drain regions.

== Benefits ==
* The semiconductor device offers improved performance and efficiency compared to previous designs.
* It allows for better control and manipulation of electrical currents within the device.
* The compact design and specific configurations make it suitable for integration into various electronic devices.


==Original Abstract Submitted==

A semiconductor device includes an active pattern with a first impurity having a first conductivity, first and second nanosheets on the active pattern, a gate electrode on the active pattern and surrounding each of the first and second nanosheets, a lower source/drain region on the active pattern, an uppermost surface of the lower source/drain region being lower than a lower surface of the second nanosheet, and the lower source/drain region being doped with a second impurity having the first conductivity, an upper source/drain region on the lower source/drain region, the upper source/drain region being doped with a third impurity having a second conductivity different from the first conductivity, and a gate insulation layer between the gate electrode and the lower and upper source/drain regions, the gate insulation layer being in contact with each of the lower and upper source/drain regions.



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