View source for 18104795. MEMORY INCLUDING ROW CIRCUIT AND OPERATION METHOD THEREOF simplified abstract (SK hynix Inc.)

=MEMORY INCLUDING ROW CIRCUIT AND OPERATION METHOD THEREOF=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Sang Hyun Ku of Gyeonggi-do (KR)|Sang Hyun Ku of Gyeonggi-do (KR)]][[Category:Sang Hyun Ku of Gyeonggi-do (KR)]]

[[:Category:Do Hong Kim of Gyeonggi-do (KR)|Do Hong Kim of Gyeonggi-do (KR)]][[Category:Do Hong Kim of Gyeonggi-do (KR)]]

[[:Category:Min Ho Seok of Gyeonggi-do (KR)|Min Ho Seok of Gyeonggi-do (KR)]][[Category:Min Ho Seok of Gyeonggi-do (KR)]]

[[:Category:Duck Hwa Hong of Gyeonggi-do (KR)|Duck Hwa Hong of Gyeonggi-do (KR)]][[Category:Duck Hwa Hong of Gyeonggi-do (KR)]]

[[:Category:So Yoon Kim of Gyeonggi-do (KR)|So Yoon Kim of Gyeonggi-do (KR)]][[Category:So Yoon Kim of Gyeonggi-do (KR)]]

==MEMORY INCLUDING ROW CIRCUIT AND OPERATION METHOD THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18104795 titled 'MEMORY INCLUDING ROW CIRCUIT AND OPERATION METHOD THEREOF

==Simplified Explanation==

The abstract describes a memory system with word lines that are activated to an active voltage level during operation and discharged during precharge. The word lines are discharged in different ways during precharge in response to different commands.

* Memory system with a plurality of word lines
* Row circuit activates and discharges word lines during active and precharge operations
* Word lines discharged from active voltage level to precharge voltage level in different ways during precharge and refresh operations

== Potential Applications ==
This technology could be applied in various electronic devices that require memory storage, such as computers, smartphones, and tablets.

== Problems Solved ==
This technology helps in efficiently managing the activation and discharge of word lines in a memory system, improving overall performance and reliability.

== Benefits ==
- Enhanced memory system operation
- Improved memory access speed
- Increased memory system reliability

== Potential Commercial Applications ==
Optimizing memory systems in electronic devices for better performance and reliability could attract manufacturers looking to enhance the capabilities of their products.

== Possible Prior Art ==
One possible prior art could be memory systems with similar row circuits for word line activation and discharge, but the specific method of discharging word lines in different ways during precharge operations may be a novel aspect of this technology.

=== Unanswered Questions ===

=== How does this technology compare to existing memory management systems in terms of efficiency and performance? ===
This article does not provide a direct comparison with existing memory management systems, so it is unclear how this technology stands out in terms of efficiency and performance.

=== What impact could this technology have on the overall cost of electronic devices incorporating this memory system? ===
The article does not address the potential cost implications of implementing this technology in electronic devices, leaving uncertainty about its impact on the overall cost.


==Original Abstract Submitted==

A memory includes: a plurality of word lines; and a row circuit configured to: activate at least one word line among the word lines to an active voltage level during an active operation and discharge the activated word line during a precharge operation; and discharge the word line from the active voltage level to a precharge voltage level in different manners during the precharge operation in response to a precharge command and during the precharge operation during a refresh operation.



[[Category:G11C11/406]]
[[Category:G11C11/408]]