View source for 18091968. BACKSIDE-CONNECTING VIA WITH NANOSHEET SPACERS FOR TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

=BACKSIDE-CONNECTING VIA WITH NANOSHEET SPACERS FOR TRANSISTORS=


==Organization Name==

[[:Category:INTERNATIONAL BUSINESS MACHINES CORPORATION|INTERNATIONAL BUSINESS MACHINES CORPORATION]]


[[Category:INTERNATIONAL BUSINESS MACHINES CORPORATION]]

==Inventor(s)==

[[:Category:Oscar Van Der Straten of Guilderland Center NY (US)|Oscar Van Der Straten of Guilderland Center NY (US)]][[Category:Oscar Van Der Straten of Guilderland Center NY (US)]]

[[:Category:Tsung-Sheng Kang of Ballston Lake NY (US)|Tsung-Sheng Kang of Ballston Lake NY (US)]][[Category:Tsung-Sheng Kang of Ballston Lake NY (US)]]

[[:Category:Alexander Reznicek of Troy NY (US)|Alexander Reznicek of Troy NY (US)]][[Category:Alexander Reznicek of Troy NY (US)]]

[[:Category:Koichi Motoyama of Clifton Park NY (US)|Koichi Motoyama of Clifton Park NY (US)]][[Category:Koichi Motoyama of Clifton Park NY (US)]]

==BACKSIDE-CONNECTING VIA WITH NANOSHEET SPACERS FOR TRANSISTORS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18091968 titled 'BACKSIDE-CONNECTING VIA WITH NANOSHEET SPACERS FOR TRANSISTORS

==Simplified Explanation==
The semiconductor device array described in the patent includes a backside power distribution network (BSPDN), a buried power rail (BPR), a device layer, and a backside-connecting via.

* The BSPDN and BPR are in electrical contact, along with the device layer and backside-connecting via.
* The device layer contains transistors and spacers, with each transistor in contact with its respective spacer.
* The backside-connecting via connects various components within the device layer.

==Key Features and Innovation==
* Integration of a BSPDN and BPR for power distribution.
* Transistors and spacers in the device layer for functionality.
* Backside-connecting via for electrical connections.

==Potential Applications==
This technology can be applied in the semiconductor industry for the fabrication of advanced device arrays with efficient power distribution networks.

==Problems Solved==
The technology addresses the need for improved power distribution and electrical connectivity within semiconductor device arrays.

==Benefits==
* Enhanced power distribution efficiency.
* Improved electrical connectivity.
* Increased functionality of semiconductor devices.

==Commercial Applications==
* Semiconductor manufacturing industry for advanced device arrays.
* Electronics industry for high-performance devices.

==Prior Art==
Readers can explore prior patents related to semiconductor device arrays and power distribution networks for further research.

==Frequently Updated Research==
Stay updated on the latest advancements in semiconductor device array technology and power distribution networks for potential improvements and innovations.

==Questions about Semiconductor Device Arrays==
===How does the integration of a BSPDN and BPR improve power distribution in semiconductor devices?===
The integration of a BSPDN and BPR allows for more efficient and reliable power distribution within the semiconductor device array, ensuring consistent performance.

===What are the key components of the device layer in the semiconductor device array?===
The device layer consists of transistors, spacers, and backside-connecting vias, which work together to enable the functionality of the semiconductor devices.


==Original Abstract Submitted==

Embodiments are disclosed for a semiconductor device array and a method for fabricating the semiconductor device array. The semiconductor device array includes a backside power distribution network (BSPDN), a buried power rail (BPR) in electrical contact with the BSPDN, a device layer, and a backside-connecting via. The device layer includes a first transistor, a second transistor, a first spacer, and a second spacer. Further, the first transistor is in electrical contact with the first spacer. Additionally, the second transistor is in electrical contact with the second spacer. Also, the first transistor neighbors the second transistor. Further, the backside-connecting via is in electrical contact with the first transistor, the BPR, the first spacer, and the second spacer.



[[Category:H01L27/12]]
[[Category:CPC_H01L27/1248]]