View source for 18091720. GATE LINE STRUCTURE TO REDUCE WAFER BOW simplified abstract (Yangtze Memory Technologies Co., Ltd.)

=GATE LINE STRUCTURE TO REDUCE WAFER BOW=


==Organization Name==

[[:Category:Yangtze Memory Technologies Co., Ltd.|Yangtze Memory Technologies Co., Ltd.]]


[[Category:Yangtze Memory Technologies Co., Ltd.]]

==Inventor(s)==

[[:Category:Shuangshuang Wu of Wuhan (CN)|Shuangshuang Wu of Wuhan (CN)]][[Category:Shuangshuang Wu of Wuhan (CN)]]

[[:Category:Kun Zhang of Wuhan (CN)|Kun Zhang of Wuhan (CN)]][[Category:Kun Zhang of Wuhan (CN)]]

[[:Category:Wenxi Zhou of Wuhan (CN)|Wenxi Zhou of Wuhan (CN)]][[Category:Wenxi Zhou of Wuhan (CN)]]

[[:Category:ZhiLiang Xia of Wuhan (CN)|ZhiLiang Xia of Wuhan (CN)]][[Category:ZhiLiang Xia of Wuhan (CN)]]

[[:Category:ZongLiang Huo of Wuhan (CN)|ZongLiang Huo of Wuhan (CN)]][[Category:ZongLiang Huo of Wuhan (CN)]]

==GATE LINE STRUCTURE TO REDUCE WAFER BOW - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18091720 titled 'GATE LINE STRUCTURE TO REDUCE WAFER BOW

==Simplified Explanation==
The three-dimensional (3D) memory device described in the patent application includes a memory array device, a peripheral device, an etch stop layer, and a backside gate line slit. The device aims to improve manufacturing efficiency and reduce various issues in memory device production.

==Key Features and Innovation==
* Memory array device with memory strings and word lines in a staircase structure.
* Peripheral device positioned above the memory array device.
* Etch stop layer between the memory array device and the peripheral device.
* Backside gate line slit extending through the memory array device to the etch stop layer.
* Backside gate line slit includes a conductive gate line layer and an insulating gate line layer.

==Potential Applications==
The 3D memory device can be used in various electronic devices such as smartphones, tablets, computers, and servers.

==Problems Solved==
The technology addresses issues related to manufacturing efficiency, yield improvement, thermal stress reduction, fluorine contamination reduction, overlay window increase, and overlay errors decrease in memory device production.

==Benefits==
* Increased manufacturing efficiency
* Improved yield
* Reduced thermal stress
* Decreased fluorine contamination
* Enhanced overlay window
* Decreased overlay errors

==Commercial Applications==
The technology can be applied in the semiconductor industry for the production of advanced memory devices, leading to improved performance and reliability in electronic devices.

==Questions about 3D Memory Device==
===What are the key components of the 3D memory device?===
The key components include a memory array device, a peripheral device, an etch stop layer, and a backside gate line slit.

===How does the 3D memory device improve manufacturing efficiency?===
The 3D memory device enhances manufacturing efficiency by addressing various issues such as yield improvement, thermal stress reduction, and overlay errors decrease.


==Original Abstract Submitted==

A three-dimensional (3D) memory device includes a memory array device, a peripheral device, an etch stop layer, and a backside gate line slit. The memory array device includes a frontside and a backside, a plurality of memory strings, and a plurality of word lines in a staircase structure coupled to the plurality of memory strings. The peripheral device is above the frontside of the memory array device. The etch stop layer is between the memory array device and the peripheral device. The backside gate line slit extends through the backside of the memory array device to the etch stop layer. The backside gate line slit includes a conductive gate line layer and an insulating gate line layer. The 3D memory device can increase manufacturing efficiency, increase yield, reduce thermal stress, reduce fluorine contamination, increase an overlay window, and decrease overlay errors.



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