View source for 18091174. OPERATION METHOD OF MEMORY SYSTEM, MEMORY SYSTEM AND ELECTRONIC DEVICE simplified abstract (Yangtze Memory Technologies Co., Ltd.)

=OPERATION METHOD OF MEMORY SYSTEM, MEMORY SYSTEM AND ELECTRONIC DEVICE=


==Organization Name==

[[:Category:Yangtze Memory Technologies Co., Ltd.|Yangtze Memory Technologies Co., Ltd.]]


[[Category:Yangtze Memory Technologies Co., Ltd.]]

==Inventor(s)==

[[:Category:Jie Wan of Wuhan, Hubei (CN)|Jie Wan of Wuhan, Hubei (CN)]][[Category:Jie Wan of Wuhan, Hubei (CN)]]

==OPERATION METHOD OF MEMORY SYSTEM, MEMORY SYSTEM AND ELECTRONIC DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18091174 titled 'OPERATION METHOD OF MEMORY SYSTEM, MEMORY SYSTEM AND ELECTRONIC DEVICE

==Simplified Explanation==

The operation method of a memory system involves determining a valley voltage by scanning memory cells and using it as a reference read voltage to read target data.

* Controller sends a first scanning command to memory to determine valley voltage.
* Valley voltage is determined based on the minimum count of memory cells with different threshold voltages.
* Controller sends a first read command to memory using the valley voltage as a reference read voltage.
* Memory reads target data according to the valley voltage.

== Potential Applications ==
This technology could be applied in:
* Solid-state drives
* Flash memory devices
* Embedded systems

== Problems Solved ==
* Improves accuracy of reading target data
* Enhances memory system performance

== Benefits ==
* Increased reliability in data retrieval
* Optimal memory system operation

== Potential Commercial Applications ==
Optimizing memory systems for:
* Consumer electronics
* Data storage devices

== Possible Prior Art ==
One possible prior art could be the use of reference voltages in memory systems to improve data reading accuracy.

== Unanswered Questions ==

=== How does this technology impact power consumption in memory systems? ===
The abstract does not mention anything about the power consumption implications of using the valley voltage as a reference read voltage. Further research is needed to understand the energy efficiency of this method.

=== Are there any limitations to the number of memory cells that can be scanned using this technique? ===
It is not clear from the abstract whether there are any limitations to the number of memory cells that can be scanned to determine the valley voltage. Investigating the scalability of this method would provide valuable insights.


==Original Abstract Submitted==

An operation method of a memory system includes sending, by a controller, a first scanning command to a memory and determining a valley voltage by scanning a plurality of memory cells. The valley voltage is determined according to a count of memory cells corresponding to different threshold voltages in a preset threshold voltage interval, the count of memory cells corresponding to the different threshold voltages being obtained by scanning the plurality of memory cells, the valley voltage being a threshold voltage corresponding to the minimum count of memory cells in the threshold voltage interval. The operation method includes sending, by the controller, a first read command to the memory, the first read command being used for instructing the memory to use the valley voltage as a reference read voltage to read target data. The operation method also includes reading, by the memory, the target data according to the valley voltage.



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