View source for 18087990. GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS simplified abstract (International Business Machines Corporation)

=GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Julien Frougier of Albany NY (US)|Julien Frougier of Albany NY (US)]][[Category:Julien Frougier of Albany NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Andrew M. Greene of Slingerlands NY (US)|Andrew M. Greene of Slingerlands NY (US)]][[Category:Andrew M. Greene of Slingerlands NY (US)]]

[[:Category:Curtis S. Durfee of Schenectady NY (US)|Curtis S. Durfee of Schenectady NY (US)]][[Category:Curtis S. Durfee of Schenectady NY (US)]]

[[:Category:Oleg Gluschenkov of Tannersville NY (US)|Oleg Gluschenkov of Tannersville NY (US)]][[Category:Oleg Gluschenkov of Tannersville NY (US)]]

[[:Category:Andrew Gaul of Halfmoon NY (US)|Andrew Gaul of Halfmoon NY (US)]][[Category:Andrew Gaul of Halfmoon NY (US)]]

==GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18087990 titled 'GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS

The semiconductor structure described in the patent application includes a gate region, a source/drain region, and a nanosheet semiconductor layer that extends continuously across both regions. The nanosheet semiconductor layer consists of a first portion in the gate region and a second portion in the source/drain region. The source/drain region also features a cladded epitaxial layer that wraps around the second portion of the nanosheet semiconductor layer.

* The semiconductor structure features a nanosheet semiconductor layer that spans the gate and source/drain regions.
* The source/drain region includes a cladded epitaxial layer that surrounds part of the nanosheet semiconductor layer.
* This design allows for improved performance and efficiency in semiconductor devices.
* The structure enhances the overall functionality of the semiconductor device.
* The innovation addresses the need for more advanced semiconductor technologies.

Potential Applications:
This technology could be applied in the development of high-performance electronic devices, such as smartphones, tablets, and computers.

Problems Solved:
The semiconductor structure addresses the need for more efficient and high-performing semiconductor devices.

Benefits:
Improved performance, efficiency, and functionality in semiconductor devices.

Commercial Applications:
This technology could have significant commercial applications in the consumer electronics industry, leading to the development of faster and more advanced electronic devices.

Questions about the technology:
1. How does the nanosheet semiconductor layer improve the performance of semiconductor devices?
2. What specific advantages does the cladded epitaxial layer in the source/drain region provide in this semiconductor structure?


==Original Abstract Submitted==

A semiconductor structure includes a gate region, a source/drain region, and a nanosheet semiconductor layer extending continuously across the gate region and the source/drain region. The nanosheet semiconductor layer includes a first portion in the gate region and a second portion in the source/drain region. The source/drain region includes a cladded epitaxial layer wrapping around the second portion of the nanosheet semiconductor layer.



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