View source for 18083075. Method for Gapfill simplified abstract (Applied Materials, Inc.)

=Method for Gapfill=


==Organization Name==

[[:Category:Applied Materials, Inc.|Applied Materials, Inc.]]


[[Category:Applied Materials, Inc.]]

==Inventor(s)==

[[:Category:Yi Xu of San Jose CA (US)|Yi Xu of San Jose CA (US)]][[Category:Yi Xu of San Jose CA (US)]]

[[:Category:Yu Lei of Belmont CA (US)|Yu Lei of Belmont CA (US)]][[Category:Yu Lei of Belmont CA (US)]]

[[:Category:Aixi Zhang of Sunnyvale CA (US)|Aixi Zhang of Sunnyvale CA (US)]][[Category:Aixi Zhang of Sunnyvale CA (US)]]

[[:Category:Rongjun Wang of Dublin CA (US)|Rongjun Wang of Dublin CA (US)]][[Category:Rongjun Wang of Dublin CA (US)]]

==Method for Gapfill - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18083075 titled 'Method for Gapfill

==Simplified Explanation==

The method described in the abstract involves depositing sacrificial Si and metal layers in an opening of a feature on a substrate, replacing the Si layer with the metal layer, and filling the gap with a metal gapfill material.

* Depositing sacrificial Si and metal layers in an opening and on a field of a substrate
* Replacing at least a portion of the sacrificial Si layer with the metal layer
* Depositing a metal gapfill material in the opening directly over the metal layer to completely fill the opening

== Potential Applications ==
This technology could be applied in semiconductor manufacturing, specifically in the fabrication of integrated circuits and other electronic devices.

== Problems Solved ==
This method helps to fill small gaps and trenches in semiconductor devices, improving the overall performance and reliability of the devices.

== Benefits ==
- Improved gap filling in semiconductor devices
- Enhanced device performance and reliability
- Cost-effective manufacturing process

== Potential Commercial Applications ==
"Gap Fill Method for Semiconductor Devices" - Improving Semiconductor Manufacturing Processes

== Possible Prior Art ==
There may be prior art related to gap fill methods in semiconductor manufacturing, but specific examples are not provided in this abstract.

== Unanswered Questions ==

=== How does this method compare to existing gap fill techniques in terms of efficiency and cost-effectiveness? ===
This article does not provide a direct comparison with existing techniques, leaving the reader to wonder about the advantages of this new method.

=== Are there any limitations or challenges associated with implementing this gap fill method on a larger scale in semiconductor production facilities? ===
The abstract does not address potential challenges or limitations that may arise when scaling up this gap fill method for commercial production.


==Original Abstract Submitted==

A method of gap fill may include depositing a sacrificial Si layer in an opening of a feature and on a field of a substrate. In addition, the method may include depositing a metal layer in the opening and on the field, where at least a portion of the sacrificial Si layer is replaced with the metal layer. The method may also include depositing a metal gapfill material in the opening and on the field directly over the metal layer, where the metal gapfill material completely fills the opening.



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