View source for 18080431. TWO-DIMENSIONAL (2D) PATTERNS USING MULTIPLE EXPOSURES OF ONE-DIMENSIONAL (1D) PHOTOLITHOGRAPHY MASKS OR HOLOGRAPHIC INTERFERENCE LITHOGRAPHY simplified abstract (Google LLC)

=TWO-DIMENSIONAL (2D) PATTERNS USING MULTIPLE EXPOSURES OF ONE-DIMENSIONAL (1D) PHOTOLITHOGRAPHY MASKS OR HOLOGRAPHIC INTERFERENCE LITHOGRAPHY=


==Organization Name==

[[:Category:Google LLC|Google LLC]]


[[Category:Google LLC]]

==Inventor(s)==

[[:Category:Lu Tian of Palo Alto CA (US)|Lu Tian of Palo Alto CA (US)]][[Category:Lu Tian of Palo Alto CA (US)]]

[[:Category:Wei Jin of Saratoga CA (US)|Wei Jin of Saratoga CA (US)]][[Category:Wei Jin of Saratoga CA (US)]]

[[:Category:Joseph Daniel Lowney of Tucson AZ (US)|Joseph Daniel Lowney of Tucson AZ (US)]][[Category:Joseph Daniel Lowney of Tucson AZ (US)]]

[[:Category:Thomas Mercier of Weston FL (US)|Thomas Mercier of Weston FL (US)]][[Category:Thomas Mercier of Weston FL (US)]]

==TWO-DIMENSIONAL (2D) PATTERNS USING MULTIPLE EXPOSURES OF ONE-DIMENSIONAL (1D) PHOTOLITHOGRAPHY MASKS OR HOLOGRAPHIC INTERFERENCE LITHOGRAPHY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18080431 titled 'TWO-DIMENSIONAL (2D) PATTERNS USING MULTIPLE EXPOSURES OF ONE-DIMENSIONAL (1D) PHOTOLITHOGRAPHY MASKS OR HOLOGRAPHIC INTERFERENCE LITHOGRAPHY

==Simplified Explanation==
The patent application describes a method for creating a two-dimensional pattern on a photoresist layer using two separate exposures with alternating illumination intensities along different dimensions.

* The first exposure creates a series of features with alternating minima and maxima of illumination intensity along one dimension.
* The second exposure creates a series of features with alternating minima and maxima of illumination intensity along a different dimension that is angularly separated from the first dimension by a rotation factor.

==Key Features and Innovation==
* Two-dimensional pattern generation on a photoresist layer.
* Utilizes two separate exposures with alternating illumination intensities along different dimensions.
* Angular separation between the dimensions enhances the pattern complexity.

==Potential Applications==
The technology can be applied in semiconductor manufacturing, microelectronics, and nanotechnology for creating intricate patterns on photoresist layers.

==Problems Solved==
* Enables the creation of complex two-dimensional patterns.
* Enhances precision and control in pattern generation processes.

==Benefits==
* Improved accuracy in pattern creation.
* Increased flexibility in design options.
* Enhanced efficiency in manufacturing processes.

==Commercial Applications==
* "Advanced Photoresist Patterning Technology for Semiconductor Manufacturing and Nanotechnology Applications"

==Prior Art==
Further research can be conducted in the field of photoresist patterning methods and advanced lithography techniques.

==Frequently Updated Research==
Stay updated on advancements in photoresist patterning technologies and lithography methods to enhance manufacturing processes.

==Questions about Advanced Photoresist Patterning Technology==
===What are the potential applications of this technology in the semiconductor industry?===
The technology can be used for creating intricate patterns on photoresist layers in semiconductor manufacturing processes, enhancing the production of advanced microelectronics components.

===How does the angular separation between dimensions improve the pattern generation process?===
The angular separation between dimensions allows for more complex and detailed patterns to be created on the photoresist layer, increasing the design flexibility and precision in manufacturing processes.


==Original Abstract Submitted==

Systems and methods are provided for generating a two-dimensional pattern on a photoresist layer. A photoresist layer is exposed via a first exposure to a first unidimensional series of features alternatingly providing first minima and maxima of illumination intensity along a first dimension. The photoresist layer is then exposed via a second exposure to a second unidimensional series of features alternatingly providing second minima and maxima of illumination intensity along a second dimension that is angularly separated from the second dimension by an exposure rotation factor.



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