View source for 18079817. Selective Implantation into STI of ETSOI Device simplified abstract (Applied Materials, Inc.)

=Selective Implantation into STI of ETSOI Device=


==Organization Name==

[[:Category:Applied Materials, Inc.|Applied Materials, Inc.]]


[[Category:Applied Materials, Inc.]]

==Inventor(s)==

[[:Category:Qintao Zhang of Mt Kisco NY (US)|Qintao Zhang of Mt Kisco NY (US)]][[Category:Qintao Zhang of Mt Kisco NY (US)]]

[[:Category:Wei Zou of Lexington MA (US)|Wei Zou of Lexington MA (US)]][[Category:Wei Zou of Lexington MA (US)]]

==Selective Implantation into STI of ETSOI Device - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18079817 titled 'Selective Implantation into STI of ETSOI Device

== Simplified Explanation ==
The patent application describes a method for improving the performance of extremely thin silicon on insulator (ETSOI) devices by forming a shallow trench isolation (STI) structure.

* The method involves creating isolation regions that extend through a buried oxide (BOX) layer and the substrate.
* A well mask is used to expose specific isolation regions for stress modification through implantation.

== Key Features and Innovation ==
* Formation of shallow trench isolation (STI) to enhance ETSOI device performance.
* Patterning of a hardmask over the substrate.
* Creation of isolation regions extending through the BOX layer and substrate.
* Stress modification of specific isolation regions through implantation.

== Potential Applications ==
This technology can be applied in the semiconductor industry for improving the performance of ETSOI devices used in various electronic applications.

== Problems Solved ==
This technology addresses the challenge of enhancing the performance of extremely thin silicon on insulator (ETSOI) devices by forming a shallow trench isolation (STI) structure.

== Benefits ==
* Improved performance of ETSOI devices.
* Enhanced stress modification capabilities.
* Increased efficiency in semiconductor manufacturing processes.

== Commercial Applications ==
Title: Enhanced Performance of ETSOI Devices through STI Formation
This technology can be utilized in the production of advanced electronic devices, such as smartphones, tablets, and other consumer electronics, to improve their overall performance and reliability.

== Prior Art ==
Readers can explore prior research on STI formation techniques in semiconductor manufacturing to understand the evolution of this technology.

== Frequently Updated Research ==
Researchers are continually exploring new methods and materials to further enhance the performance of ETSOI devices through STI formation.

== Questions about STI Formation ==
=== What are the key benefits of using STI in ETSOI devices? ===
STI in ETSOI devices helps improve device performance, stress modification capabilities, and overall efficiency in semiconductor manufacturing processes.

=== How does STI formation impact the reliability of electronic devices? ===
STI formation enhances the reliability of electronic devices by providing better isolation between components and reducing stress on the materials.


==Original Abstract Submitted==

Disclosed herein are approaches for forming a shallow trench isolation (STI) to improve extremely thin silicon on insulator (ETSOI) device performance. In one approach, a method may include providing a device stack comprising a buried oxide (BOX) layer in a substrate, patterning a hardmask over the substrate, and forming a plurality of isolation regions in the device stack, wherein the plurality of isolation regions extend through the box layer and the substrate. The method may further include forming a well mask over the device stack, wherein an opening through the well mask exposes a first isolation region of the plurality of isolation regions, and modifying a stress of a material of the first isolation region by implanting the first isolation region of the plurality of isolation regions.



[[Category:H01L21/762]]
[[Category:H01L21/3115]]
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