View source for 18079373. METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

=METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Tan Sakong of Seoul (KR)|Tan Sakong of Seoul (KR)]][[Category:Tan Sakong of Seoul (KR)]]

==METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18079373 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE

==Simplified Explanation==

The patent application describes a semiconductor light emitting device that has a rod-shaped structure with opposing surfaces and a side surface. It includes a first conductivity-type semiconductor, an active layer, and a second conductivity-type semiconductor. The device also has a first electrode layer on a vertically offset region of the first surface, connected to the first conductivity-type semiconductor, and a second electrode layer connected to the second conductivity-type semiconductor.

* The light emitting device has a rod-shaped structure with opposing surfaces and a side surface.
* It includes a first conductivity-type semiconductor, an active layer, and a second conductivity-type semiconductor.
* The first electrode layer is located on a vertically offset region of the first surface and is connected to the first conductivity-type semiconductor.
* The second electrode layer is connected to the second conductivity-type semiconductor.

Potential applications of this technology:
* Lighting: The semiconductor light emitting device can be used in various lighting applications, such as residential, commercial, and industrial lighting.
* Displays: The device can be utilized in display technologies, including LED displays and OLED displays.
* Automotive lighting: The technology can be applied in automotive lighting systems, including headlights, taillights, and interior lighting.

Problems solved by this technology:
* Improved efficiency: The rod-shaped structure and the vertically offset electrode region contribute to improved efficiency in light emission.
* Enhanced performance: The active layer and the specific design of the device result in enhanced performance in terms of brightness and color accuracy.
* Compact design: The rod-shaped structure allows for a compact design, making it suitable for various applications where space is limited.

Benefits of this technology:
* Energy efficiency: The improved efficiency of the light emitting device leads to energy savings and reduced environmental impact.
* High performance: The enhanced performance characteristics of the device result in brighter and more accurate lighting or display output.
* Versatility: The compact design and various applications make this technology versatile and suitable for different industries and settings.


==Original Abstract Submitted==

A semiconductor light emitting device includes a light emitting structure having a rod shape with first and second surfaces opposing each other and a side surface connected between the first and second surfaces, and including a first conductivity-type semiconductor providing the first surface, an active layer and a second conductivity-type semiconductor, a first electrode layer on a first region of the first surface of the light emitting structure and connected to the first conductivity-type semiconductor, the first region having a level that is vertically offset from a level of a second region adjacent thereto, and a second electrode layer connected to the second conductivity-type semiconductor.



[[Category:H01L33/20]]
[[Category:H01L27/15]]
[[Category:H01L33/42]]
[[Category:H01L33/38]]