View source for 18070050. NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

=NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS=


==Organization Name==

[[:Category:INTERNATIONAL BUSINESS MACHINES CORPORATION|INTERNATIONAL BUSINESS MACHINES CORPORATION]]


[[Category:INTERNATIONAL BUSINESS MACHINES CORPORATION]]

==Inventor(s)==

[[:Category:Ruqiang Bao of Niskayuna NY (US)|Ruqiang Bao of Niskayuna NY (US)]][[Category:Ruqiang Bao of Niskayuna NY (US)]]

[[:Category:Eric Miller of Albany NY (US)|Eric Miller of Albany NY (US)]][[Category:Eric Miller of Albany NY (US)]]

[[:Category:Dechao Guo of Niskayuna NY (US)|Dechao Guo of Niskayuna NY (US)]][[Category:Dechao Guo of Niskayuna NY (US)]]

==NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18070050 titled 'NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS

==Simplified Explanation==

The abstract describes a patent application related to semiconductor devices and methods of forming the same, involving transistors with different work function metal layers in different regions.

* The first transistor in a first region has a first work function metal layer.
* The second transistor in a second region has a second work function metal layer that overlaps a portion of the first work function metal layer and has a vertical part above it.

== Potential Applications ==
This technology could be applied in:
* Advanced electronic devices
* Integrated circuits
* Semiconductor manufacturing

== Problems Solved ==
This technology helps in:
* Improving transistor performance
* Enhancing device efficiency
* Reducing power consumption

== Benefits ==
The benefits of this technology include:
* Increased functionality of semiconductor devices
* Enhanced overall performance
* Potential for smaller and more efficient devices

== Potential Commercial Applications ==
This technology could be commercially applied in:
* Consumer electronics
* Telecommunications
* Automotive industry

== Possible Prior Art ==
One possible prior art could be:
* Previous methods of forming transistors with different work function metal layers
* Research on improving semiconductor device performance

== Unanswered Questions ==
=== How does this technology compare to existing methods of transistor formation? ===
This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the specific advantages of this new approach.

=== What specific improvements in device performance can be expected with this technology? ===
While the benefits are mentioned, the article does not delve into the quantitative or qualitative improvements that can be achieved with the implementation of this technology.


==Original Abstract Submitted==

Semiconductor devices and methods of forming the same include a first transistor in a first region having a first work function metal layer. A second transistor in a second region has a second work function metal layer that overlaps a portion of the first work function metal layer and that has a vertical part above the portion of the first work function metal layer.



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