View source for 18068992. COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT simplified abstract (QUALCOMM Incorporated)

=COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT=


==Organization Name==

[[:Category:QUALCOMM Incorporated|QUALCOMM Incorporated]]


[[Category:QUALCOMM Incorporated]]

==Inventor(s)==

[[:Category:Xia Li of San Diego CA (US)|Xia Li of San Diego CA (US)]][[Category:Xia Li of San Diego CA (US)]]

[[:Category:Junjing Bao of San Diego CA (US)|Junjing Bao of San Diego CA (US)]][[Category:Junjing Bao of San Diego CA (US)]]

[[:Category:Giridhar Nallapati of San Diego CA (US)|Giridhar Nallapati of San Diego CA (US)]][[Category:Giridhar Nallapati of San Diego CA (US)]]

==COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18068992 titled 'COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT

'''Simplified Explanation:'''
The patent application describes complementary field effect transistors (CFETs) with balanced n and p drive current, created using horizontal p-doped and n-doped nanosheet channels in separate vertical stacks.

* CFETs have balanced n and p drive current
* Horizontal p-doped nanosheet channels in first vertical stack for nFET
* Horizontal n-doped nanosheet channels in second vertical stack for pFET
* Channels connect source and drain contacts through gate-all-around (GAA) regions
* Width to length ratio (W/L) is not equal for n and p channels

'''Key Features and Innovation:'''
* CFET structure with balanced n and p drive current
* Use of horizontal p-doped and n-doped nanosheet channels in separate vertical stacks
* Channels connected through gate-all-around (GAA) regions
* Non-equal width to length ratio (W/L) for n and p channels

'''Potential Applications:'''
* Advanced semiconductor devices
* High-performance integrated circuits
* Power-efficient electronics

'''Problems Solved:'''
* Imbalance in n and p drive current in traditional transistors
* Inefficiencies in power consumption
* Limitations in semiconductor device performance

'''Benefits:'''
* Improved performance and efficiency
* Enhanced power management
* Increased reliability of electronic devices

'''Commercial Applications:'''
Advanced Semiconductor Technology for High-Performance Electronics

'''Prior Art:'''
Research on CFET structures and balanced drive current in field effect transistors.

'''Frequently Updated Research:'''
Ongoing studies on nanosheet channel technology and its applications in semiconductor devices.

'''Questions about CFETs:'''
1. How do CFETs differ from traditional field effect transistors?
2. What are the potential challenges in implementing CFET technology in commercial electronics?


==Original Abstract Submitted==

Disclosed are complementary field effect transistors (CFETs) with balanced n and p drive current, and methods for making the same. In an aspect, a CFET structure comprises an nFET with horizontal p-doped nanosheet channels arranged in a first vertical stack, each horizontal p-doped nanosheet channel having a width W, and connecting a first source contact to a first drain contact through a first gate-all-around (GAA) region having a length L. The CFET structure further comprises a pFET with horizontal n-doped nanosheet channels arranged in a second vertical stack disposed on the first vertical stack, each horizontal n-doped nanosheet channel having a width W, and connecting a second source contact to a second drain contact through a second GAA region having a length L, wherein W/L is not equal to W/L



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[[Category:CPC_H01L29/78696]]