View source for 18064261. REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES simplified abstract (International Business Machines Corporation)

=REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Matthias Georg Gottwald of Ridgefield CT (US)|Matthias Georg Gottwald of Ridgefield CT (US)]][[Category:Matthias Georg Gottwald of Ridgefield CT (US)]]

[[:Category:Guohan Hu of Yorktown Heights NY (US)|Guohan Hu of Yorktown Heights NY (US)]][[Category:Guohan Hu of Yorktown Heights NY (US)]]

[[:Category:Stephen L. Brown of Carmel NY (US)|Stephen L. Brown of Carmel NY (US)]][[Category:Stephen L. Brown of Carmel NY (US)]]

[[:Category:Alexander Reznicek of Troy NY (US)|Alexander Reznicek of Troy NY (US)]][[Category:Alexander Reznicek of Troy NY (US)]]

==REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18064261 titled 'REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES

The semiconductor device described in the patent application includes a substrate with a crystalline bottom electrode layer, a conductive crystalline metal layer, and a conductive oxide layer with low resistance. Additionally, there is a magnetic tunnel junction (MTJ) above the conductive crystalline metal layer, consisting of a tunnel barrier layer, a free layer, and a reference layer.

* The semiconductor device features a unique structure with multiple layers designed to enhance performance and functionality.
* The inclusion of a low-resistance conductive oxide layer improves the overall efficiency of the device.
* The magnetic tunnel junction (MTJ) adds a magnetic element to the semiconductor device, potentially enabling new functionalities and applications in the field of electronics.

Potential Applications:
- This technology could be applied in the development of advanced electronic devices such as sensors, memory storage, and computing systems.

Problems Solved:
- The semiconductor device addresses the need for improved performance and efficiency in electronic components.
- The integration of a magnetic tunnel junction offers new possibilities for magnetic-based applications in semiconductor devices.

Benefits:
- Enhanced performance and efficiency in electronic devices.
- Potential for new functionalities and applications in the field of electronics.

Commercial Applications:
Title: Advanced Semiconductor Device with Magnetic Tunnel Junction
This technology could be utilized in the production of high-performance sensors, memory storage devices, and computing systems, catering to industries such as consumer electronics, telecommunications, and data storage.

Questions about the technology:
1. How does the inclusion of a magnetic tunnel junction impact the functionality of the semiconductor device?
2. What are the potential advantages of using a conductive oxide layer with low resistance in the device design?


==Original Abstract Submitted==

A semiconductor device that includes a substrate, a crystalline bottom electrode layer on an upper side of the semiconductor substrate, a conductive crystalline metal layer above the crystalline bottom electrode layer, and a conductive oxide layer above the conductive crystalline metal layer. The conductive oxide layer has a low resistance. The semiconductor device also includes a magnetic tunnel junction (MTJ) above the conductive crystalline metal layer, the MTJ including a tunnel barrier layer, a free layer on a first side of the tunnel barrier layer and a reference layer on a second side of the tunnel barrier layer opposite the first side.



[[Category:H10N50/01]]
[[Category:G11C11/16]]
[[Category:H01F10/32]]
[[Category:H10B61/00]]
[[Category:H10N50/10]]
[[Category:H10N50/80]]
[[Category:H10N50/85]]
[[Category:CPC_H01L43/12]]