View source for 18062231. OVERLAY CORRECTING METHOD, AND PHOTOLITHOGRAPHY METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SCANNER SYSTEM BASED ON THE OVERLAY CORRECTING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=OVERLAY CORRECTING METHOD, AND PHOTOLITHOGRAPHY METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SCANNER SYSTEM BASED ON THE OVERLAY CORRECTING METHOD=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Jeongjin Lee of Hwaseong-si (KR)|Jeongjin Lee of Hwaseong-si (KR)]][[Category:Jeongjin Lee of Hwaseong-si (KR)]]

[[:Category:Minseok Kang of Hwaseong-si (KR)|Minseok Kang of Hwaseong-si (KR)]][[Category:Minseok Kang of Hwaseong-si (KR)]]

[[:Category:Seungyoon Lee of Seoul (KR)|Seungyoon Lee of Seoul (KR)]][[Category:Seungyoon Lee of Seoul (KR)]]

[[:Category:Chan Hwang of Seoul (KR)|Chan Hwang of Seoul (KR)]][[Category:Chan Hwang of Seoul (KR)]]

==OVERLAY CORRECTING METHOD, AND PHOTOLITHOGRAPHY METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SCANNER SYSTEM BASED ON THE OVERLAY CORRECTING METHOD - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18062231 titled 'OVERLAY CORRECTING METHOD, AND PHOTOLITHOGRAPHY METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SCANNER SYSTEM BASED ON THE OVERLAY CORRECTING METHOD

==Simplified Explanation==

The abstract describes a method for optimizing the correction of an overlay within the limits of a scanner in a scanner system. The method involves collecting overlay data, calculating correction parameters using regularized regression, and providing these parameters to the scanner.

* The method collects overlay data by measuring the overlay of a pattern.
* Correction parameters are calculated using regularized regression, which is based on the scanner's correction limit.
* The calculated correction parameters are then provided to the scanner.

== Potential Applications ==
This technology can be applied in various industries and fields where precise overlay correction is required, such as:

* Semiconductor manufacturing: This method can be used in the production of semiconductor devices to improve the accuracy of overlay alignment during the lithography process.
* Photolithography: The method can be employed in photolithography processes to enhance the alignment of multiple layers, resulting in improved precision and quality of the final product.

== Problems Solved ==
The overlay correcting method addresses the following problems:

* Limited correction range: Scanners have a specific correction limit, and this method ensures that the calculated correction parameters fall within this limit, optimizing the overlay correction within the scanner's capabilities.
* Overlay misalignment: By accurately measuring the overlay and calculating correction parameters, this method helps to correct any misalignment between different layers or patterns, improving the overall quality and performance of the final product.

== Benefits ==
The overlay correcting method offers several benefits:

* Improved accuracy: By using regularized regression and considering the scanner's correction limit, the method provides more precise correction parameters, resulting in better overlay alignment.
* Enhanced productivity: The optimized overlay correction reduces the need for manual adjustments and rework, saving time and resources in the manufacturing process.
* Higher quality products: By minimizing overlay misalignment, the method helps to produce semiconductor devices and other products with improved precision and performance.


==Original Abstract Submitted==

An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.



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