View source for 18059672. THREE DIMENSIONAL RERAM DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

=THREE DIMENSIONAL RERAM DEVICE=


==Organization Name==

[[:Category:INTERNATIONAL BUSINESS MACHINES CORPORATION|INTERNATIONAL BUSINESS MACHINES CORPORATION]]


[[Category:INTERNATIONAL BUSINESS MACHINES CORPORATION]]

==Inventor(s)==

[[:Category:Min Gyu Sung of Latham NY (US)|Min Gyu Sung of Latham NY (US)]][[Category:Min Gyu Sung of Latham NY (US)]]

[[:Category:Soon-Cheon Seo of Glenmont NY (US)|Soon-Cheon Seo of Glenmont NY (US)]][[Category:Soon-Cheon Seo of Glenmont NY (US)]]

[[:Category:Heng Wu of Santa Clara CA (US)|Heng Wu of Santa Clara CA (US)]][[Category:Heng Wu of Santa Clara CA (US)]]

[[:Category:Julien Frougier of Albany NY (US)|Julien Frougier of Albany NY (US)]][[Category:Julien Frougier of Albany NY (US)]]

[[:Category:Chen Zhang of Guilderland NY (US)|Chen Zhang of Guilderland NY (US)]][[Category:Chen Zhang of Guilderland NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

==THREE DIMENSIONAL RERAM DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18059672 titled 'THREE DIMENSIONAL RERAM DEVICE

==Simplified Explanation==

The abstract describes a resistive random access memory (ReRAM) device with vertically stacked cells. Here are some bullet points to explain the innovation:

* ReRAM device with first electrode, resistive switching element layer, and multiple second electrodes
* Protruding portions of first electrode and resistive switching element layer overlap with second electrodes in a vertical direction
* Forms a plurality of vertically stacked ReRAM cells

== Potential Applications ==
The technology could be applied in:
* Non-volatile memory storage
* Neuromorphic computing
* Internet of Things (IoT) devices

== Problems Solved ==
This technology addresses issues such as:
* Increasing memory density
* Improving energy efficiency
* Enhancing data retention

== Benefits ==
The benefits of this technology include:
* Faster data access
* Lower power consumption
* Higher memory capacity

== Potential Commercial Applications ==
The technology could be used in various industries, including:
* Semiconductor manufacturing
* Consumer electronics
* Data centers

== Possible Prior Art ==
One example of prior art in this field is the development of 3D NAND memory technology, which also involves stacking memory cells vertically.

=== Unanswered Questions ===

=== How does this technology compare to other types of non-volatile memory? ===
This article does not provide a direct comparison with other non-volatile memory technologies such as NAND flash or MRAM.

=== What are the potential challenges in scaling up this technology for mass production? ===
The article does not address the potential challenges in scaling up production of the ReRAM device for commercial applications.


==Original Abstract Submitted==

A resistive random access memory (ReRAM) device and a method for forming the device are provided. The ReRAM device includes a first electrode, a resistive switching element layer in contact with the first electrode, and a plurality of second electrodes in contact with the resistive switching element layer. Protruding portions of the first electrode and the resistive switching element layer overlap with the plurality of second electrodes in a vertical direction of the ReRAM device to form a plurality of vertically stacked ReRAM cells.



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