View source for 18054871. INVERSION LAYER APD simplified abstract (Cisco Technology, Inc.)

=INVERSION LAYER APD=


==Organization Name==

[[:Category:Cisco Technology, Inc.|Cisco Technology, Inc.]]


[[Category:Cisco Technology, Inc.]]

==Inventor(s)==

[[:Category:Gianlorenzo Masini of Carlsbad CA (US)|Gianlorenzo Masini of Carlsbad CA (US)]][[Category:Gianlorenzo Masini of Carlsbad CA (US)]]

==INVERSION LAYER APD - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18054871 titled 'INVERSION LAYER APD

==Simplified Explanation==

The abstract describes an APD with a vertical electric field, utilizing an inversion layer at the interface between N-doped silicon and an oxide as a cathode for the vertical electric field.

* The APD described in the patent application utilizes a vertical electric field.
* An inversion layer is used at the interface between N-doped silicon and an oxide to reduce the thickness of the vertical electric field.

== Potential Applications ==
The technology described in the patent application could be applied in:
* High-speed optical communication systems
* Medical imaging devices

== Problems Solved ==
The technology addresses the following issues:
* Reducing the thickness of the vertical electric field in APDs
* Enhancing the performance of APDs in various applications

== Benefits ==
The benefits of this technology include:
* Improved efficiency and sensitivity in detecting optical signals
* Enhanced performance in low-light conditions

== Potential Commercial Applications ==
The technology could find commercial applications in:
* Telecommunications industry for high-speed data transmission
* Healthcare sector for advanced imaging technologies

== Possible Prior Art ==
One possible prior art for this technology could be the use of vertical electric fields in other semiconductor devices for signal detection and amplification.

=== Unanswered Questions ===

=== How does the inversion layer affect the performance of the APD? ===
The inversion layer at the interface between N-doped silicon and an oxide is used to reduce the thickness of the vertical electric field. This helps in improving the efficiency and sensitivity of the APD in detecting optical signals.

=== What are the specific advantages of using a vertical electric field in APDs? ===
The use of a vertical electric field in APDs allows for better control and manipulation of the electric field within the device, leading to enhanced performance in various applications such as optical communication and imaging.


==Original Abstract Submitted==

Embodiments herein describe an APD with a vertical electric field. In one embodiment, to reduce the thickness of the vertical electric field, an inversion layer at the interface between N doped silicon and an oxide is used as a cathode for the vertical electric field.



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