View source for 18052428. NON-VOLATILE MEMORY DEVICE INCLUDING MULTI-STACK MEMORY BLOCK AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=NON-VOLATILE MEMORY DEVICE INCLUDING MULTI-STACK MEMORY BLOCK AND OPERATING METHOD THEREOF=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Yohan Lee of Suwon-si (KR)|Yohan Lee of Suwon-si (KR)]][[Category:Yohan Lee of Suwon-si (KR)]]

[[:Category:Jaeduk Yu of Suwon-si (KR)|Jaeduk Yu of Suwon-si (KR)]][[Category:Jaeduk Yu of Suwon-si (KR)]]

[[:Category:Jiho Cho of Suwon-si (KR)|Jiho Cho of Suwon-si (KR)]][[Category:Jiho Cho of Suwon-si (KR)]]

==NON-VOLATILE MEMORY DEVICE INCLUDING MULTI-STACK MEMORY BLOCK AND OPERATING METHOD THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18052428 titled 'NON-VOLATILE MEMORY DEVICE INCLUDING MULTI-STACK MEMORY BLOCK AND OPERATING METHOD THEREOF

==Simplified Explanation==

The abstract describes an operating method for a memory system that includes a memory controller and a non-volatile memory device. The method involves determining if a specific memory block meets a reset condition, and if so, applying a turn-on voltage to certain cells, transferring data from the first memory block to a second memory block, erasing the first memory block, and reprogramming the cells.

* The method involves determining if a specific memory block meets a reset condition.
* If the reset condition is met, a turn-on voltage is applied to certain cells in the memory block.
* Data pre-programmed in the first memory block is transferred to a second memory block.
* The first memory block is then erased.
* The cells in the first memory block are reprogrammed.

Potential applications of this technology:

* Memory systems in electronic devices such as smartphones, tablets, and computers.
* Data storage in cloud computing and data centers.
* Embedded systems in automotive, aerospace, and industrial applications.

Problems solved by this technology:

* Efficient management of memory blocks in non-volatile memory devices.
* Ensuring data integrity during the reset and reprogramming process.
* Optimizing the use of memory resources in memory systems.

Benefits of this technology:

* Improved performance and reliability of memory systems.
* Enhanced data storage and retrieval capabilities.
* Efficient utilization of memory resources.
* Simplified memory management processes.


==Original Abstract Submitted==

According to an example embodiment of the inventive concepts, an operating method of a memory system including a memory controller and a non-volatile memory device, the non-volatile memory device being operated under control by the memory controller and the non-volatile memory including a first memory block and a second memory block, the method includes determining, by the memory controller, whether the first memory block satisfies a block reset condition, in response to the first memory block satisfying the block reset condition, applying a turn-on voltage to word lines of dummy cells included in the first memory block, transferring data pre-programmed in the first memory block to the second memory block, erasing the first memory block, and re-programming the dummy cells of the first memory block.



[[Category:G06F3/06]]