View source for 18049297. SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

=SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY=


==Organization Name==

[[:Category:INTERNATIONAL BUSINESS MACHINES CORPORATION|INTERNATIONAL BUSINESS MACHINES CORPORATION]]


[[Category:INTERNATIONAL BUSINESS MACHINES CORPORATION]]

==Inventor(s)==

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Nicholas Anthony Lanzillo of Wynantskill NY (US)|Nicholas Anthony Lanzillo of Wynantskill NY (US)]][[Category:Nicholas Anthony Lanzillo of Wynantskill NY (US)]]

[[:Category:Brent A. Anderson of Jericho VT (US)|Brent A. Anderson of Jericho VT (US)]][[Category:Brent A. Anderson of Jericho VT (US)]]

[[:Category:REINALDO Vega of Mahopac NY (US)|REINALDO Vega of Mahopac NY (US)]][[Category:REINALDO Vega of Mahopac NY (US)]]

[[:Category:Albert M. Chu of Nashua NH (US)|Albert M. Chu of Nashua NH (US)]][[Category:Albert M. Chu of Nashua NH (US)]]

[[:Category:Lawrence A. Clevenger of Saratoga Springs NY (US)|Lawrence A. Clevenger of Saratoga Springs NY (US)]][[Category:Lawrence A. Clevenger of Saratoga Springs NY (US)]]

==SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18049297 titled 'SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY

==Simplified Explanation==

The semiconductor structure described in the abstract includes a semiconductor wafer with two transistors, each having a source/drain contact. There is a cut region between the two contacts, consisting of a liner of a first dielectric material and a filler of a second dielectric material. The filler is different from the liner and is located between the two contacts.

* Semiconductor structure with two transistors and source/drain contacts
* Cut region between the contacts with a liner and filler of different dielectric materials

== Potential Applications ==
The semiconductor structure could be used in various electronic devices such as smartphones, computers, and other integrated circuits where high-performance transistors are required.

== Problems Solved ==
This technology helps in reducing parasitic capacitance between the source/drain contacts of the transistors, thereby improving the overall performance and efficiency of the semiconductor device.

== Benefits ==
- Improved performance of transistors
- Enhanced efficiency of semiconductor devices
- Reduction in parasitic capacitance

== Potential Commercial Applications ==
The technology could be utilized in the semiconductor industry for manufacturing advanced transistors and integrated circuits, leading to the development of faster and more energy-efficient electronic devices.

== Possible Prior Art ==
One possible prior art could be the use of different dielectric materials in semiconductor structures to reduce parasitic capacitance. However, the specific configuration of a liner and filler between source/drain contacts as described in this invention may be novel.

=== Unanswered Questions ===

=== How does the choice of dielectric materials impact the performance of the transistors in the semiconductor structure? ===
The abstract mentions the use of different dielectric materials for the liner and filler in the cut region. It would be interesting to know how this choice affects the electrical properties and overall functionality of the transistors.

=== What manufacturing processes are involved in creating the cut region with the liner and filler in the semiconductor structure? ===
The abstract briefly mentions a method of manufacturing the semiconductor structure, but it would be beneficial to understand the specific techniques and steps involved in producing the cut region with the liner and filler.


==Original Abstract Submitted==

Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a semiconductor wafer having a first transistor and a second transistor; a first source/drain (S/D) contact of the first transistor; a second S/D contact of the second transistor; and a cut region between the first S/D contact and the second S/D contact, wherein the cut region includes a liner of a first dielectric material and a filler of a second dielectric material that is different from the first dielectric material, the liner lining at least a part of the first S/D contact and a part of the second S/D contact, and the filler being directly adjacent to the liner and between the first S/D contact and the second S/D contact. A method of manufacturing the semiconductor structure is also provided.



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