View source for 18046518. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR DEVICES=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:MYUNG GIL Kang of Suwon-si (KR)|MYUNG GIL Kang of Suwon-si (KR)]][[Category:MYUNG GIL Kang of Suwon-si (KR)]]

[[:Category:Dong Won Kim of Seongnam-si (KR)|Dong Won Kim of Seongnam-si (KR)]][[Category:Dong Won Kim of Seongnam-si (KR)]]

[[:Category:Woo Seok Park of Ansan-si (KR)|Woo Seok Park of Ansan-si (KR)]][[Category:Woo Seok Park of Ansan-si (KR)]]

[[:Category:Keun Hwi Cho of Seoul (KR)|Keun Hwi Cho of Seoul (KR)]][[Category:Keun Hwi Cho of Seoul (KR)]]

[[:Category:Sung Gi Hur of Hwaseong-si (KR)|Sung Gi Hur of Hwaseong-si (KR)]][[Category:Sung Gi Hur of Hwaseong-si (KR)]]

==SEMICONDUCTOR DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18046518 titled 'SEMICONDUCTOR DEVICES

==Simplified Explanation==

The abstract describes a semiconductor device with a unique configuration of active patterns and gate electrodes. Here are the key points:

* The semiconductor device consists of a first active pattern, which includes a lower pattern extending in one direction and a sheet pattern spaced apart from the lower pattern.
* The device also includes a gate electrode on the lower pattern, which extends in a different direction and surrounds the sheet pattern.
* The lower pattern has two opposite sidewalls, each extending in the first direction.
* The gate electrode overlaps one sidewall of the lower pattern by a certain depth in the second direction, and overlaps the other sidewall by a different depth in the second direction.
* The first depth and the second depth are not the same.

Potential applications of this technology:

* This semiconductor device configuration can be used in various electronic devices, such as integrated circuits, microprocessors, and memory chips.
* It can improve the performance and efficiency of these devices by optimizing the layout and interaction between the active patterns and gate electrodes.

Problems solved by this technology:

* The unique configuration of active patterns and gate electrodes helps to overcome limitations and challenges in traditional semiconductor device designs.
* It allows for better control and manipulation of electrical signals within the device, leading to improved functionality and performance.

Benefits of this technology:

* The optimized layout and interaction between the active patterns and gate electrodes result in enhanced device performance, such as faster processing speeds and lower power consumption.
* The unique configuration provides more flexibility in designing and manufacturing semiconductor devices, allowing for greater customization and innovation in electronic products.


==Original Abstract Submitted==

Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction different from the first direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.



[[Category:H01L29/423]]
[[Category:H01L27/092]]
[[Category:H01L29/06]]
[[Category:H01L29/786]]