View source for 17985804. FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

=FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER=


==Organization Name==

[[:Category:INTERNATIONAL BUSINESS MACHINES CORPORATION|INTERNATIONAL BUSINESS MACHINES CORPORATION]]


[[Category:INTERNATIONAL BUSINESS MACHINES CORPORATION]]

==Inventor(s)==

[[:Category:Matthias Georg Gottwald of Ridgefield CT (US)|Matthias Georg Gottwald of Ridgefield CT (US)]][[Category:Matthias Georg Gottwald of Ridgefield CT (US)]]

[[:Category:Alexander Reznicek of Troy NY (US)|Alexander Reznicek of Troy NY (US)]][[Category:Alexander Reznicek of Troy NY (US)]]

==FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17985804 titled 'FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER

==Simplified Explanation==

The present invention relates to magnetic tunneling junction (MTJ) pillars with a fast-switching magnetic free layer, a magnetic reference layer, and a tunnel barrier layer. A diffusion barrier layer prevents material diffusion, enabling reduced resistance area (RA) in devices.

* MTJ pillars consist of a magnetic free layer, a magnetic reference layer, and a tunnel barrier layer.
* A diffusion barrier layer prevents material diffusion, reducing resistance area in devices.
* The invention enables devices with faster magnetic orientation switching speeds.

== Potential Applications ==
The technology can be applied in:
* Magnetic random-access memory (MRAM)
* Magnetic sensors
* Spintronic devices

== Problems Solved ==
* Material diffusion in MTJ pillars
* Reduced resistance area in devices
* Faster magnetic orientation switching speeds

== Benefits ==
* Improved performance in MRAM and magnetic sensors
* Enhanced reliability in spintronic devices
* Increased data storage capacity

== Potential Commercial Applications ==
Optimizing MTJ pillars for:
* Next-generation computing devices
* High-speed data storage solutions
* Advanced magnetic sensors

== Possible Prior Art ==
Prior art may include:
* Research on magnetic tunneling junctions
* Studies on material diffusion in magnetic devices

== Unanswered Questions ==
1. How does the use of an AlMnGe alloy impact the performance of the magnetic free layer in MTJ pillars?
2. What specific methods are used to fabricate the fast-switching MTJ pillars with reduced resistance area?


==Original Abstract Submitted==

Embodiments of the present invention an (or an array of) magnetic tunneling junction (MTJ) pillars, each with a magnetic free layer (containing a fast-switching material like aluminum or a metal like gallium), a magnetic reference layer, and a tunnel barrier layer separating the two magnetic layers. A chromium-containing diffusion barrier layer disposed between the magnetic free layer and tunnel barrier layer prevents aluminum (or gallium) diffusion from the magnetic free layer into a tunnel barrier layer of the MTJ pillar. Devices using and methods of making the fast-switching MTJ(s) are also disclosed. The invention enables devices with reduced resistance area (RA). Embodiments use a AlMnGe alloy to make the magnetic free layer with a tetragonal crystalline structure and a lower magnetic moment that supports higher magnetic orientation switching speeds.



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