View source for 17973083. Time-Resolved OES Data Collection simplified abstract (Tokyo Electron Limited)

=Time-Resolved OES Data Collection=


==Organization Name==

[[:Category:Tokyo Electron Limited|Tokyo Electron Limited]]


[[Category:Tokyo Electron Limited]]

==Inventor(s)==

[[:Category:Sergey Voronin of Albany NY (US)|Sergey Voronin of Albany NY (US)]][[Category:Sergey Voronin of Albany NY (US)]]

[[:Category:Andrej Mitrovic of Chandler AZ (US)|Andrej Mitrovic of Chandler AZ (US)]][[Category:Andrej Mitrovic of Chandler AZ (US)]]

[[:Category:Blaze Messer of Albany NY (US)|Blaze Messer of Albany NY (US)]][[Category:Blaze Messer of Albany NY (US)]]

[[:Category:Yan Chen of Fremont CA (US)|Yan Chen of Fremont CA (US)]][[Category:Yan Chen of Fremont CA (US)]]

[[:Category:Joel Ng of Fremont CA (US)|Joel Ng of Fremont CA (US)]][[Category:Joel Ng of Fremont CA (US)]]

[[:Category:Ashawaraya Shalini of Fremont CA (US)|Ashawaraya Shalini of Fremont CA (US)]][[Category:Ashawaraya Shalini of Fremont CA (US)]]

[[:Category:Ying Zhu of Fremont CA (US)|Ying Zhu of Fremont CA (US)]][[Category:Ying Zhu of Fremont CA (US)]]

[[:Category:Da Song of Albany NY (US)|Da Song of Albany NY (US)]][[Category:Da Song of Albany NY (US)]]

==Time-Resolved OES Data Collection - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17973083 titled 'Time-Resolved OES Data Collection

The patent application describes a method of processing a substrate in a plasma processing chamber by alternating power between two electrodes to optimize plasma conditions and enhance processing efficiency.

* Exposing the substrate to a plasma powered by a first power applied to a first electrode.
* Turning OFF the first power to the first electrode after a certain duration.
* Applying a second power to a second electrode for a shorter duration while the first power is OFF.
* The energy of the second power is significantly lower than the energy of the first power.
* Detecting an optical emission spectrum (OES) from species in the plasma processing chamber.

Potential Applications:
- Semiconductor manufacturing
- Thin film deposition
- Surface cleaning and etching processes

Problems Solved:
- Improving processing efficiency
- Enhancing plasma uniformity
- Reducing energy consumption

Benefits:
- Faster substrate processing
- Higher quality film deposition
- Energy savings

Commercial Applications:
Title: Enhanced Plasma Processing Method for Semiconductor Manufacturing
This technology can be utilized in semiconductor fabrication facilities to improve processing speed and quality, leading to cost savings and enhanced product performance.

Questions about the technology:
1. How does this method compare to traditional plasma processing techniques?
2. What are the specific benefits of using lower energy power during plasma processing?

Frequently Updated Research:
Researchers are continually exploring ways to optimize plasma processing techniques for various applications, including semiconductor manufacturing and nanotechnology. Stay updated on the latest advancements in plasma processing technology to leverage its benefits effectively.


==Original Abstract Submitted==

A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.



[[Category:G01J3/443]]
[[Category:G01J3/02]]
[[Category:CPC_G01J3/443]]