View source for 17963313. MEMORY ARRAY UTILIZING BITCELLS WITH SINGLE-ENDED READ CIRCUITRY simplified abstract (Intel Corporation)

=MEMORY ARRAY UTILIZING BITCELLS WITH SINGLE-ENDED READ CIRCUITRY=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Amlan Ghosh of Mebane NC (US)|Amlan Ghosh of Mebane NC (US)]][[Category:Amlan Ghosh of Mebane NC (US)]]

[[:Category:Feroze Merchant of Austin TX (US)|Feroze Merchant of Austin TX (US)]][[Category:Feroze Merchant of Austin TX (US)]]

[[:Category:Jaydeep Kulkarni of Austin TX (US)|Jaydeep Kulkarni of Austin TX (US)]][[Category:Jaydeep Kulkarni of Austin TX (US)]]

[[:Category:John R. Riley of Sebastian FL (US)|John R. Riley of Sebastian FL (US)]][[Category:John R. Riley of Sebastian FL (US)]]

==MEMORY ARRAY UTILIZING BITCELLS WITH SINGLE-ENDED READ CIRCUITRY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17963313 titled 'MEMORY ARRAY UTILIZING BITCELLS WITH SINGLE-ENDED READ CIRCUITRY

==Simplified Explanation==

The memory device described in the patent application includes a bitcell with multiple sets of transistor devices, including a write port, an inverter pair for storing data, and a read port for accessing and outputting the stored data.

* The first set of transistor devices forms a single write port for receiving digital data.
* The second set of transistor devices functions as an inverter pair to store the digital data.
* The third set of transistor devices creates a single read port to access and output the stored data on the local bitline.
* The plurality of transistor devices consists of an equal number of P-channel and N-channel transistor devices.

== Potential Applications ==
This technology could be applied in:
* Memory devices
* Integrated circuits
* Data storage systems

== Problems Solved ==
This technology helps in:
* Efficient data storage
* Fast data access
* Reliable memory operations

== Benefits ==
The benefits of this technology include:
* Improved memory performance
* Enhanced data reliability
* Reduced power consumption

== Potential Commercial Applications ==
A potential commercial application of this technology could be in:
* Consumer electronics
* Computer systems
* Data centers

== Possible Prior Art ==
One possible prior art for this technology could be:
* Previous memory cell designs
* Existing transistor configurations

== Unanswered Questions ==
=== How does this technology compare to existing memory cell designs in terms of speed and efficiency? ===
This article does not provide a direct comparison between this technology and existing memory cell designs.

=== Are there any potential limitations or drawbacks to implementing this technology in practical applications? ===
The article does not address any limitations or drawbacks that may arise from implementing this technology in practical applications.


==Original Abstract Submitted==

A memory device includes at least one bitcell coupled to a local bitline. The at least one bitcell includes multiple sets of a plurality of transistor devices. The first set of the plurality of transistor devices is configured to form a single write (1W) port for receiving digital data. The second set of the plurality of transistor devices is configured as an inverter pair. The inverter pair stores the digital data. The third set of the plurality of transistor devices is configured to form a single read (1R) port. The 1R port can be used to access the digital data stored at the inverter pair and output the digital data on the local bitline. The plurality of transistor devices includes an equal number of P-channel transistor devices and N-channel transistor devices.



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