View source for 17949990. PPA IMPROVEMENT FOR VOLTAGE MODE DRIVER AND ON-DIE TERMINATION (ODT) simplified abstract (SanDisk Technologies LLC)

=PPA IMPROVEMENT FOR VOLTAGE MODE DRIVER AND ON-DIE TERMINATION (ODT)=


==Organization Name==

[[:Category:SanDisk Technologies LLC|SanDisk Technologies LLC]]


[[Category:SanDisk Technologies LLC]]

==Inventor(s)==

[[:Category:NIRAV NATWARBHAI Patel of BANGALORE IN (US)|NIRAV NATWARBHAI Patel of BANGALORE IN (US)]][[Category:NIRAV NATWARBHAI Patel of BANGALORE IN (US)]]

[[:Category:SHIV HARIT Mathur of BANGALORE (IN)|SHIV HARIT Mathur of BANGALORE (IN)]][[Category:SHIV HARIT Mathur of BANGALORE (IN)]]

[[:Category:SAI RAVI TEJA Konakalla of BANGALORE (IN)|SAI RAVI TEJA Konakalla of BANGALORE (IN)]][[Category:SAI RAVI TEJA Konakalla of BANGALORE (IN)]]

==PPA IMPROVEMENT FOR VOLTAGE MODE DRIVER AND ON-DIE TERMINATION (ODT) - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17949990 titled 'PPA IMPROVEMENT FOR VOLTAGE MODE DRIVER AND ON-DIE TERMINATION (ODT)

==Simplified Explanation==

The patent application describes systems and methods for improving the power, performance, and area (PPA) for a voltage mode driver and on-die termination (ODT). The voltage mode driver includes first and second circuits in a pulldown design, with the first circuit having multiple nMOS devices in parallel and the second circuit having an nMOS device in series with a resistor. The second circuit is enabled when the pulldown impedance of the first circuit is greater than a desired value.

* The patent application focuses on improving the power, performance, and area (PPA) of a voltage mode driver and on-die termination (ODT).
* The voltage mode driver includes first and second circuits in a pulldown design, with the second circuit being enabled based on the pulldown impedance of the first circuit.
* The first circuit has multiple nMOS devices in parallel, while the second circuit has an nMOS device in series with a resistor.

== Potential Applications ==
The technology described in the patent application could be applied in various electronic devices and systems that require efficient voltage mode drivers and on-die termination.

== Problems Solved ==
This technology addresses the need for improved power, performance, and area efficiency in voltage mode drivers and on-die termination circuits.

== Benefits ==
The benefits of this technology include enhanced PPA metrics, optimized circuit design, and improved overall efficiency in electronic systems.

== Potential Commercial Applications ==
The technology could find commercial applications in semiconductor manufacturing, integrated circuit design, and electronic device production.

== Possible Prior Art ==
One possible prior art for this technology could be existing voltage mode driver and on-die termination designs that do not incorporate the specific improvements described in the patent application.

== Unanswered Questions ==
=== How does this technology compare to existing voltage mode driver designs in terms of efficiency and performance? ===
The article does not provide a direct comparison between this technology and existing voltage mode driver designs.

=== Are there any specific industries or applications where this technology would be most beneficial? ===
The article does not specify any particular industries or applications where this technology would have the most significant impact.


==Original Abstract Submitted==

Systems and methods for improving the power, performance, and area (PPA) for a voltage mode driver and on die termination (ODT). A voltage mode driver having first and second circuits in a pulldown design. The first circuit has a plurality of nMOS devices in parallel, the plurality of nMOS devices being common to a first resistor. The second circuit is in parallel with the first circuit and has an nMOS device in series with a second resistor. The second circuit is configured to be enabled when the pulldown impedance of the first circuit, with the second circuit disabled and all of the nMOS devices of the first circuit turned on, is greater than a desired pulldown impedance. The voltage mode driver may also be a pullup design, or have both pulldown and pullup stages.



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