View source for 17946609. METHODS TO PREVENT SURFACE CHARGE INDUCED CD-DEPENDENT ETCHING OF MATERIAL FORMED WITHIN FEATURES ON A PATTERNED SUBSTRATE simplified abstract (TOKYO ELECTRON LIMITED)

=METHODS TO PREVENT SURFACE CHARGE INDUCED CD-DEPENDENT ETCHING OF MATERIAL FORMED WITHIN FEATURES ON A PATTERNED SUBSTRATE=


==Organization Name==

[[:Category:TOKYO ELECTRON LIMITED|TOKYO ELECTRON LIMITED]]


[[Category:TOKYO ELECTRON LIMITED]]

==Inventor(s)==

[[:Category:Shan Hu of Albany NY (US)|Shan Hu of Albany NY (US)]][[Category:Shan Hu of Albany NY (US)]]

[[:Category:Henan Zhang of Albany NY (US)|Henan Zhang of Albany NY (US)]][[Category:Henan Zhang of Albany NY (US)]]

[[:Category:Sangita Kumari of Albany NY (US)|Sangita Kumari of Albany NY (US)]][[Category:Sangita Kumari of Albany NY (US)]]

[[:Category:Peter Delia of Albany NY (US)|Peter Delia of Albany NY (US)]][[Category:Peter Delia of Albany NY (US)]]

[[:Category:Robert Clark of Fremont CA (US)|Robert Clark of Fremont CA (US)]][[Category:Robert Clark of Fremont CA (US)]]

==METHODS TO PREVENT SURFACE CHARGE INDUCED CD-DEPENDENT ETCHING OF MATERIAL FORMED WITHIN FEATURES ON A PATTERNED SUBSTRATE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17946609 titled 'METHODS TO PREVENT SURFACE CHARGE INDUCED CD-DEPENDENT ETCHING OF MATERIAL FORMED WITHIN FEATURES ON A PATTERNED SUBSTRATE

==Simplified Explanation==

The abstract of the patent application describes a wet etch process that provides uniform etching of materials within features and on planar areas of a patterned substrate, especially when the critical dimension of the features is small compared to the planar areas. This uniform etching is achieved by ensuring that the wall surfaces adjacent to the material being etched have a neutral surface charge when exposed to the etch solution.

* Explanation of the patent/innovation:
- Wet etch process for uniform etching of materials in features and on planar areas of a patterned substrate.
- Particularly useful when critical dimensions of features are small compared to planar areas.
- Achieves uniform etching by maintaining neutral surface charge on wall surfaces adjacent to the material being etched.

== Potential Applications ==
The technology can be applied in semiconductor manufacturing processes, MEMS fabrication, microelectronics, and other industries requiring precise wet etching of materials on patterned substrates.

== Problems Solved ==
- Uneven etching of materials in features and on planar areas of patterned substrates.
- Difficulty in achieving uniform etching when critical dimensions vary significantly.

== Benefits ==
- Improved uniformity in wet etching processes.
- Enhanced control over etching of materials in complex patterns.
- Increased efficiency and accuracy in semiconductor manufacturing.

== Potential Commercial Applications ==
Optimizing wet etch processes in semiconductor fabrication for improved device performance.
Enhancing MEMS production for more precise microelectromechanical systems.
Improving microelectronics manufacturing for higher quality products.

== Possible Prior Art ==
Prior art may include wet etch processes that focus on uniform etching but do not specifically address the issue of maintaining a neutral surface charge on wall surfaces for improved uniformity.

=== Unanswered Questions ===

== How does this wet etch process compare to dry etch processes in terms of efficiency and precision? ==
The article does not provide a direct comparison between wet etch and dry etch processes in terms of efficiency and precision. It would be interesting to see a detailed analysis of the advantages and disadvantages of each method in specific applications.

== Are there any potential challenges or limitations in implementing this wet etch process on an industrial scale? ==
The article does not discuss any challenges or limitations in implementing this wet etch process on an industrial scale. It would be valuable to explore potential obstacles such as scalability, cost-effectiveness, and compatibility with existing manufacturing equipment.


==Original Abstract Submitted==

Embodiments of a wet etch process and methods are disclosed herein to provide uniform wet etching of material formed within features (e.g., trenches, holes, slits, etc.), and on more planar areas of a patterned substrate, when a critical dimension (CD) of the features is relatively small compared to the more planar areas of the patterned substrate. In the present disclosure, uniform wet etching is provided by ensuring that wall surfaces adjacent to the material being etched exhibit a neutral surface charge when exposed to the etch solution used to etch the material.



[[Category:H01L21/311]]
[[Category:H01L21/306]]
[[Category:H01L21/3213]]