View source for 17945467. SEMICONDUCTOR DEVICE WITH GATE STRUCTURE AND CURRENT SPREAD REGION simplified abstract (Infineon Technologies AG)

=SEMICONDUCTOR DEVICE WITH GATE STRUCTURE AND CURRENT SPREAD REGION=


==Organization Name==

[[:Category:Infineon Technologies AG|Infineon Technologies AG]]


[[Category:Infineon Technologies AG]]

==Inventor(s)==

[[:Category:Paul Ellinghaus of Unterhaching (DE)|Paul Ellinghaus of Unterhaching (DE)]][[Category:Paul Ellinghaus of Unterhaching (DE)]]

[[:Category:Sandeep Walia of Villach (AT)|Sandeep Walia of Villach (AT)]][[Category:Sandeep Walia of Villach (AT)]]

==SEMICONDUCTOR DEVICE WITH GATE STRUCTURE AND CURRENT SPREAD REGION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17945467 titled 'SEMICONDUCTOR DEVICE WITH GATE STRUCTURE AND CURRENT SPREAD REGION

==Simplified Explanation==

The abstract describes a method for manufacturing a semiconductor device involving implantation processes, trench formation, and gate structure formation.

* Implantation processes are performed to form an implanted region of a first conductivity type in a semiconductor body.
* A trench is formed in the semiconductor body.
* A second implantation process is performed to form a current spread region of a second conductivity type in the semiconductor body.
* The second implantation process includes implanting first dopants through the top surface of the semiconductor body to form a first portion of the current spread region, and implanting second dopants through the bottom of the trench to form a second portion of the current spread region.
* A gate structure is formed in the trench, with the first portion of the current spread region matching the vertical position of the gate structure, and the second portion underlying the gate structure.

== Potential Applications ==
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as in mobile devices, computers, and automotive electronics.

== Problems Solved ==
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing current spread and reducing resistance, leading to better overall device functionality.

== Benefits ==
The method described in the patent application allows for the precise formation of current spread regions in semiconductor devices, leading to improved device performance and reliability.

== Potential Commercial Applications ==
The technology could be utilized by semiconductor manufacturers to produce high-performance and energy-efficient devices for consumer electronics, industrial applications, and telecommunications.

== Possible Prior Art ==
One possible prior art could be the use of similar implantation processes and trench structures in semiconductor device manufacturing, but the specific method described in this patent application may offer unique advantages in terms of device performance and efficiency.

== Unanswered Questions ==

=== How does this method compare to existing techniques in terms of cost-effectiveness? ===
The article does not provide information on the cost implications of implementing this method compared to traditional semiconductor manufacturing techniques.

=== What are the potential challenges or limitations of implementing this method on a large scale? ===
The article does not address any potential obstacles or scalability issues that may arise when applying this manufacturing method in mass production settings.


==Original Abstract Submitted==

According to some embodiments, a method for manufacturing a semiconductor device is provided. One or more first implantation processes are performed to form an implanted region, of a first conductivity type, in a semiconductor body. A trench is formed in the semiconductor body. After forming the trench, a second implantation process is performed to form a current spread region, of a second conductivity type, in the semiconductor body. The second implantation process includes implanting first dopants, through a top surface of the semiconductor body, to form a first portion of the current spread region, and implanting second dopants, through a bottom of the trench, to form a second portion of the current spread region. A gate structure is formed in the trench. A vertical position of the first portion of the current spread region matches a vertical position of the gate structure. The second portion of the current spread region underlies the gate structure.



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