View source for 17931937. CACHING LOOKUP TABLES FOR BLOCK FAMILY ERROR AVOIDANCE simplified abstract (Micron Technology, Inc.)

=CACHING LOOKUP TABLES FOR BLOCK FAMILY ERROR AVOIDANCE=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Shakeel Isamohiuddin Bukhari of San Jose CA (US)|Shakeel Isamohiuddin Bukhari of San Jose CA (US)]][[Category:Shakeel Isamohiuddin Bukhari of San Jose CA (US)]]

[[:Category:Mark Ish of Manassas VA (US)|Mark Ish of Manassas VA (US)]][[Category:Mark Ish of Manassas VA (US)]]

==CACHING LOOKUP TABLES FOR BLOCK FAMILY ERROR AVOIDANCE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17931937 titled 'CACHING LOOKUP TABLES FOR BLOCK FAMILY ERROR AVOIDANCE

==Simplified Explanation==

- A memory device caches a subset of block family error avoidance (BFEA) lookup tables associated with host data in a first memory location.
- The block family is based on a time window or temperature window during which the host data was written.
- The memory device receives a read command associated with host data and determines a threshold voltage offset based on the block family and the subset of BFEA tables.
- The memory device computes a modified threshold voltage by applying the threshold voltage offset to a base read level voltage associated with the host data.
- The memory device reads the host data from the first memory location using the modified threshold voltage.

== Potential Applications ==
- Data storage devices
- Solid-state drives
- Memory systems

== Problems Solved ==
- Error avoidance in memory devices
- Efficient data retrieval
- Improved data integrity

== Benefits ==
- Enhanced data reliability
- Improved performance in memory devices
- Reduced risk of data corruption


==Original Abstract Submitted==

In some implementations, a memory device may cache a subset of one or more block family error avoidance (BFEA) lookup tables associated with a block family associated with host data in a first memory location. The block family may be based on at least one of a time window during which the host data was written or a temperature window at which the host data was written. The memory device may receive a read command associated with host data and determine, based on the block family and the subset of the one or more BFEA tables, a threshold voltage offset associated with the host data. The memory device may compute a modified threshold voltage by applying the threshold voltage offset to a base read level voltage associated with the host data. The memory device may read, using the modified threshold voltage, the host data from the first memory location.



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