View source for 17908418. DETECTION SUBSTRATE AND FLAT PANEL DETECTOR simplified abstract (BOE Technology Group Co., Ltd.)

=DETECTION SUBSTRATE AND FLAT PANEL DETECTOR=


==Organization Name==

[[:Category:BOE Technology Group Co., Ltd.|BOE Technology Group Co., Ltd.]]


[[Category:BOE Technology Group Co., Ltd.]]

==Inventor(s)==

[[:Category:Xiangmi Zhan of Beijing (CN)|Xiangmi Zhan of Beijing (CN)]][[Category:Xiangmi Zhan of Beijing (CN)]]

[[:Category:Zhenyu Wang of Beijing (CN)|Zhenyu Wang of Beijing (CN)]][[Category:Zhenyu Wang of Beijing (CN)]]

[[:Category:Yifan Yang of Beijing (CN)|Yifan Yang of Beijing (CN)]][[Category:Yifan Yang of Beijing (CN)]]

[[:Category:Zhi Ding of Beijing (CN)|Zhi Ding of Beijing (CN)]][[Category:Zhi Ding of Beijing (CN)]]

[[:Category:Xuecheng Hou of Beijing (CN)|Xuecheng Hou of Beijing (CN)]][[Category:Xuecheng Hou of Beijing (CN)]]

==DETECTION SUBSTRATE AND FLAT PANEL DETECTOR - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17908418 titled 'DETECTION SUBSTRATE AND FLAT PANEL DETECTOR

==Simplified Explanation==
The patent application describes a detection substrate with detection pixel units arranged in an array on a base substrate. Each unit includes a thin film transistor, a photoelectric conversion part, and a bias voltage line. The substrate also includes at least one dielectric layer with a via hole, ensuring the channel region of the transistor aligns with the hole.

* Thin film transistor technology
* Photoelectric conversion parts
* Bias voltage lines
* Dielectric layer with via hole alignment
* Flat panel detector

==Key Features and Innovation==
* Detection substrate with thin film transistors and photoelectric conversion parts
* Dielectric layer with via hole alignment for precise positioning
* Integration of bias voltage lines for efficient operation
* Array of detection pixel units for high-resolution imaging
* Flat panel detector design for various applications

==Potential Applications==
* Medical imaging devices
* Security scanners
* Industrial inspection systems
* Scientific research equipment
* Surveillance cameras

==Problems Solved==
* Improved image quality and resolution
* Enhanced efficiency in detecting and converting light signals
* Precise alignment of components for accurate imaging
* Streamlined design for compact and portable devices
* Versatile applications in various industries

==Benefits==
* High-quality imaging capabilities
* Enhanced sensitivity to light signals
* Compact and portable design
* Improved efficiency in data conversion
* Versatile applications in different fields

==Commercial Applications==
'''Flat Panel Detectors: Revolutionizing Imaging Technology'''
This technology can be utilized in medical imaging devices, security scanners, industrial inspection systems, scientific research equipment, and surveillance cameras, offering high-resolution imaging capabilities and efficient light signal detection.

==Prior Art==
Research on thin film transistors, photoelectric conversion parts, and flat panel detectors in the field of imaging technology can provide valuable insights into the development of this detection substrate.

==Frequently Updated Research==
Ongoing research in thin film transistor technology, dielectric materials, and photoelectric conversion efficiency can contribute to advancements in detection substrates for various applications.

==Questions about Detection Substrate==
===What are the key components of a detection substrate?===
A detection substrate consists of thin film transistors, photoelectric conversion parts, bias voltage lines, and dielectric layers with via holes for precise alignment.

===How does the alignment of components in a detection substrate impact its performance?===
The precise alignment of components, such as the channel region of the transistor with the via hole in the dielectric layer, ensures efficient operation and high-quality imaging capabilities.


==Original Abstract Submitted==

The present disclosure provides a detection substrate, including: a base substrate, detection pixel units arranged in an array on the base substrate, where each detection pixel unit includes: a thin film transistor and a photoelectric conversion part located on a side of the thin film transistor, and a bias voltage line is arranged on a side of the photoelectric conversion part. The thin film transistor includes: an active layer, a first electrode and a second electrode, and the active layer including a channel region. At least one dielectric layer is provided between the photoelectric conversion part and the bias voltage line, and is formed with a first via hole therein, and at least part of an orthographic projection of the channel region on the base substrate is located within an orthographic projection of the first via hole on the base substrate. A flat panel detector is further provided.



[[Category:H01L27/146]]
[[Category:G01T1/20]]
[[Category:CPC_H01L27/14616]]