View source for 17899145. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME, MEMORY AND OPERATION METHOD THEREOF simplified abstract (Changxin Memory Technologies, Inc.)

=SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME, MEMORY AND OPERATION METHOD THEREOF=


==Organization Name==

[[:Category:Changxin Memory Technologies, Inc.|Changxin Memory Technologies, Inc.]]


[[Category:Changxin Memory Technologies, Inc.]]

==Inventor(s)==

[[:Category:Yanzhe Tang of Hefei (CN)|Yanzhe Tang of Hefei (CN)]][[Category:Yanzhe Tang of Hefei (CN)]]

==SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME, MEMORY AND OPERATION METHOD THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17899145 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME, MEMORY AND OPERATION METHOD THEREOF

==Simplified Explanation==

The patent application describes a semiconductor structure and a method for manufacturing it, as well as a memory and a method for operating it. Here are the key points:

* The semiconductor structure includes a substrate with active areas near its surface.
* A gate structure is located in a first structure layer on the substrate, forming a selective transistor with the active areas.
* An anti-fuse bit structure is located in a second structure layer on top of the first structure layer.
* The anti-fuse bit structure is connected to an active area of one selective transistor through a first connecting structure.
* The anti-fuse bit structure can be in a breakdown state or a non-breakdown state, representing different stored data.

Potential applications of this technology:

* Memory devices: The described semiconductor structure and memory method can be used in various memory devices, such as non-volatile memories or programmable logic devices.
* Integrated circuits: The structure and method can be applied in the manufacturing of integrated circuits, enabling the creation of more efficient and reliable circuits.

Problems solved by this technology:

* Data storage: The anti-fuse bit structure provides a reliable and efficient way to store data in memory devices.
* Integration challenges: The described structure and method help overcome challenges in integrating different components and layers in semiconductor manufacturing.

Benefits of this technology:

* Improved data reliability: The breakdown and non-breakdown states of the anti-fuse bit structure allow for reliable storage of data.
* Enhanced integration: The structure and method enable the integration of different components and layers, leading to more efficient and compact semiconductor devices.
* Simplified manufacturing process: The described method provides a simplified approach to manufacturing the semiconductor structure, reducing complexity and costs.


==Original Abstract Submitted==

Provided is a semiconductor structure and a method for manufacturing the same, a memory and a method for operating the same. The semiconductor includes a substrate having a plurality of active areas close to a surface of the substrate; a gate structure located in a first structure layer on the substrate, in which the gate structure and the active areas constitute a selective transistor; and an anti-fuse bit structure located in a second structure layer on the first structure layer, and connected with an active area of one selective transistor through a first connecting structure, in which a breakdown state and a non-breakdown state of the anti-fuse bit structure represent different stored data.



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