View source for 17898060. COMPACT MICROELECTRONIC 6T SRAM MEMORY DEVICES, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)

=COMPACT MICROELECTRONIC 6T SRAM MEMORY DEVICES, AND RELATED SYSTEMS AND METHODS=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Mitsunari Sukekawa of Hiroshima (JP)|Mitsunari Sukekawa of Hiroshima (JP)]][[Category:Mitsunari Sukekawa of Hiroshima (JP)]]

==COMPACT MICROELECTRONIC 6T SRAM MEMORY DEVICES, AND RELATED SYSTEMS AND METHODS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17898060 titled 'COMPACT MICROELECTRONIC 6T SRAM MEMORY DEVICES, AND RELATED SYSTEMS AND METHODS

==Simplified Explanation==

- Microelectronic devices have memory cells with six transistors grouped in pairs of pillars.
- Each pair of pillars includes a first and a second pillar made from semiconductor material.
- Gate electrodes extend between and around portions of the first and second pillars in each pair.
- Conductive structures are electrically coupled to the six pillars, with at least one structure in physical contact with multiple pillars.

== Potential Applications ==
- Memory storage devices
- Microprocessors
- Integrated circuits

== Problems Solved ==
- Increased memory cell density
- Enhanced performance of microelectronic devices
- Improved reliability and efficiency of memory storage

== Benefits ==
- Higher data storage capacity
- Faster data processing speeds
- More reliable and efficient memory cells


==Original Abstract Submitted==

Microelectronic devices include at least one memory cell, each with six transistors collectively comprising six pillars grouped in pillar pairs and formed from a semiconductor material. Each of the pillar pairs includes a first and a second pillar. Gate electrodes are also included, with each gate electrode extending between and horizontally around a portion of the first pillar and a portion of the second pillar of a respective one of the pillar pairs. Conductive structures are electrically coupled to the six pillars. At least one of the conductive structures is in physical contact with more than one of the pillars of the microelectronic device. Related methods and electrical systems are also disclosed.



[[Category:H01L27/11]]