View source for 17834992. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICES=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Kyungsoo Kim of Hwaseong-si (KR)|Kyungsoo Kim of Hwaseong-si (KR)]][[Category:Kyungsoo Kim of Hwaseong-si (KR)]]

[[:Category:Kyenhee Lee of Seoul (KR)|Kyenhee Lee of Seoul (KR)]][[Category:Kyenhee Lee of Seoul (KR)]]

==SEMICONDUCTOR DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17834992 titled 'SEMICONDUCTOR DEVICES

==Simplified Explanation==

The abstract describes a semiconductor device that includes various components such as active regions, gate electrodes, source/drain regions, buried interconnection lines, and contact plugs. 

* The device has a substrate with active regions and gate electrodes intersecting them.
* Source/drain regions are located in recessed areas of the active regions.
* Buried interconnection lines are present in the substrate.
* Two lower contact plugs connect the source/drain regions and gate electrodes to the buried interconnection lines.
* Upper contact plugs are connected to the source/drain regions and gate electrodes.
* The upper surfaces of the lower contact plugs are positioned lower than the upper surfaces of the gate electrodes.

Potential applications of this technology:

* Integrated circuits
* Microprocessors
* Memory devices
* Power devices

Problems solved by this technology:

* Efficient connection between different components of the semiconductor device
* Reduction of signal loss and interference
* Improved performance and reliability of the device

Benefits of this technology:

* Enhanced functionality and performance of semiconductor devices
* Increased integration density
* Improved signal transmission and connectivity
* Enhanced reliability and durability of the device


==Original Abstract Submitted==

A semiconductor device, includes: a substrate including active regions extending in a first direction; gate electrodes extending in a second direction, intersecting the active regions; source/drain regions disposed in regions in which the active regions are recessed; buried interconnection lines disposed in the substrate; a first lower contact plug penetrating through a portion of the substrate, and connecting at least one of the source/drain regions and at least one of the buried interconnection lines; a second lower contact plug penetrating through a portion of the substrate, and connecting at least one of the gate electrodes and at least one of the buried interconnection lines; and upper contact plugs connected to a portion of the source/drain regions and a portion of the gate electrodes, wherein upper surfaces of the first and second lower contact plugs are disposed on a level lower than a level of upper surfaces of the gate electrodes.



[[Category:H01L29/417]]
[[Category:H01L29/78]]
[[Category:H01L23/522]]
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