View source for 17834074. PROCESSING APPARATUSES INCLUDING MAGNETIC RESISTORS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=PROCESSING APPARATUSES INCLUDING MAGNETIC RESISTORS=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Unghwan Pi of Hwaseong-si (KR)|Unghwan Pi of Hwaseong-si (KR)]][[Category:Unghwan Pi of Hwaseong-si (KR)]]

==PROCESSING APPARATUSES INCLUDING MAGNETIC RESISTORS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17834074 titled 'PROCESSING APPARATUSES INCLUDING MAGNETIC RESISTORS

==Simplified Explanation==

The patent application describes a processing apparatus that includes a bit-cell array with multiple bit-cells connected in series. Each bit-cell has a first magnetic resistor that stores a resistance value based on the movement of a magnetic domain-wall, and a second magnetic resistor that stores a resistance value equal to or less than the first resistance value. The bit-cell also includes a first switching element to switch the electrical signal applied to the first magnetic resistor, and a second switching element to switch the electrical signal applied to the second magnetic resistor.

* The processing apparatus includes a bit-cell array with multiple bit-cells connected in series.
* Each bit-cell has a first magnetic resistor that stores a resistance value based on the movement of a magnetic domain-wall.
* Each bit-cell also has a second magnetic resistor that stores a resistance value equal to or less than the first resistance value.
* The bit-cell includes a first switching element to switch the electrical signal applied to the first magnetic resistor.
* The bit-cell also includes a second switching element to switch the electrical signal applied to the second magnetic resistor.

== Potential Applications ==
* This technology can be applied in various memory devices, such as non-volatile memory or magnetic random-access memory (MRAM).
* It can also be used in data storage systems, where the ability to store resistance values based on magnetic domain-wall movement can enhance data storage capacity and reliability.

== Problems Solved ==
* The processing apparatus solves the problem of efficiently storing and retrieving data in memory devices.
* By using magnetic resistors and switching elements, the apparatus provides a reliable and compact solution for data storage.

== Benefits ==
* The use of magnetic resistors allows for the storage of resistance values, which can represent data, in a compact and efficient manner.
* The ability to switch the electrical signals applied to the magnetic resistors provides flexibility in reading and writing data.
* The processing apparatus offers improved data storage capacity and reliability compared to traditional memory technologies.


==Original Abstract Submitted==

A processing apparatus includes a bit-cell array including at least one bit-cell line including a plurality of bit-cells electrically connected to each other in series, wherein each of the plurality of bit-cells includes: a first magnetic resistor that is configured to store a first resistance value based on a movement of a location of a magnetic domain-wall; a second magnetic resistor that is configured to store a second resistance value, wherein the second resistance value is equal to or less than the first resistance value; a first switching element configured to switch an electrical signal applied to the first magnetic resistor; and a second switching element configured to switch an electrical signal applied to the second magnetic resistor.



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