View source for 17827231. SEMICONDUCTOR DEVICE MEASURING DEVICE AND METHOD FOR MEASURING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR DEVICE MEASURING DEVICE AND METHOD FOR MEASURING SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Hyun Woo Ryoo of Suwon-si (KR)|Hyun Woo Ryoo of Suwon-si (KR)]][[Category:Hyun Woo Ryoo of Suwon-si (KR)]]

[[:Category:Da Hee Yoon of Gwangju (KR)|Da Hee Yoon of Gwangju (KR)]][[Category:Da Hee Yoon of Gwangju (KR)]]

[[:Category:Jung Hoon Byun of Seoul (KR)|Jung Hoon Byun of Seoul (KR)]][[Category:Jung Hoon Byun of Seoul (KR)]]

[[:Category:Dong-Ryul Lee of Goyang-si (KR)|Dong-Ryul Lee of Goyang-si (KR)]][[Category:Dong-Ryul Lee of Goyang-si (KR)]]

[[:Category:Woo Yun Lee of Hwaseong-si (KR)|Woo Yun Lee of Hwaseong-si (KR)]][[Category:Woo Yun Lee of Hwaseong-si (KR)]]

[[:Category:Dong Chul Ihm of Suwon-si (KR)|Dong Chul Ihm of Suwon-si (KR)]][[Category:Dong Chul Ihm of Suwon-si (KR)]]

[[:Category:Chung Sam Jun of Suwon-si (KR)|Chung Sam Jun of Suwon-si (KR)]][[Category:Chung Sam Jun of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICE MEASURING DEVICE AND METHOD FOR MEASURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17827231 titled 'SEMICONDUCTOR DEVICE MEASURING DEVICE AND METHOD FOR MEASURING SEMICONDUCTOR DEVICE

==Simplified Explanation==

The patent application describes a semiconductor device measuring device that can accurately measure the concentration of a dopant in a sample wafer. Here are the key points:

* The device includes a light generator that generates light and a polarizer that polarizes the light.
* It has a wafer stage with two load ports: one for an undoped reference wafer and another for a doped sample wafer.
* The wafer stage can be moved to two positions, where the polarized light is incident on the reference wafer and the sample wafer, respectively.
* A spectroscope collects Raman spectral information of the light reflected from both wafers.
* A photodetector detects Raman scattering signals based on the spectral information.
* A spectrum corrector corrects the scattering signal of the sample wafer using the scattering signal of the reference wafer.
* A controller calculates the concentration of the dopant in the sample wafer using the corrected scattering signal.

Potential applications of this technology:

* Quality control in semiconductor manufacturing: The device can be used to accurately measure the concentration of dopants in sample wafers, ensuring the quality and performance of semiconductor devices.
* Research and development: Researchers can use this device to study the effects of different dopant concentrations on semiconductor materials and optimize their properties.

Problems solved by this technology:

* Accurate measurement of dopant concentration: The device provides a reliable and precise method for measuring the concentration of dopants in semiconductor wafers, overcoming the limitations of existing techniques.
* Efficiency and speed: The device can quickly measure the dopant concentration, allowing for faster production processes and research experiments.

Benefits of this technology:

* Improved quality control: The accurate measurement of dopant concentration ensures the quality and performance of semiconductor devices, reducing defects and improving overall product reliability.
* Time and cost savings: The device enables faster measurement and analysis of dopant concentration, reducing production time and costs.
* Enhanced research capabilities: Researchers can obtain precise and reliable data on dopant concentration, enabling them to study and optimize semiconductor materials more effectively.


==Original Abstract Submitted==

A semiconductor device measuring device includes: a light generator which generates light; a polarizer which polarizes the light; a wafer stage including a first load port on which an undoped reference wafer is loaded, and a second load port on which a doped sample wafer is loaded, the wafer stage being movable to first and second positions at which the polarized light is incident on the reference wafer and the sample wafer, respectively; a spectroscope which collects first and second Raman spectral information of light reflected from the reference and sample wafers, respectively; a photodetector which detects first and second Raman scattering signals based on the first and second Raman spectral information, respectively; a spectrum corrector which corrects the second Raman scattering signal using the first Raman scattering signal; and a controller which calculates a concentration of the dopant of the sample wafer using the corrected scattering signal.



[[Category:G01J3/44]]
[[Category:G01N21/65]]
[[Category:G01N21/95]]