View source for 17805221. MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS simplified abstract (Micron Technology, Inc.)

=MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Shuangqiang Luo of Boise ID (US)|Shuangqiang Luo of Boise ID (US)]][[Category:Shuangqiang Luo of Boise ID (US)]]

==MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17805221 titled 'MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS

==Simplified Explanation==

The patent application describes a microelectronic device with a stack structure that includes alternating layers of conductive and insulative materials. The stack structure is divided into blocks by filled slot structures. Each block consists of a memory array region, staircase structures with steps, and crest regions between neighboring staircase structures. The device also includes contact structures that extend vertically through the stack structure to a source tier below.

* The microelectronic device has a stack structure with alternating layers of conductive and insulative materials.
* The stack structure is divided into blocks by filled slot structures.
* Each block includes a memory array region, staircase structures, and crest regions.
* Contact structures extend vertically through the stack structure to a source tier below.
* The contact structures include first contact structures in electrical communication with control logic circuitry.
* The contact structures also include second contact structures that are electrically isolated from the control logic circuitry.
* Some of the first contact structures are positioned more centrally within each block in a horizontal direction compared to some of the second contact structures.

== Potential Applications ==
* Microelectronic devices with improved memory array regions.
* Devices with efficient contact structures for control logic circuitry.

== Problems Solved ==
* Efficient organization and arrangement of memory array regions in microelectronic devices.
* Improved contact structures for control logic circuitry.

== Benefits ==
* Enhanced performance and functionality of microelectronic devices.
* Increased efficiency in accessing and controlling memory array regions.
* Improved integration of control logic circuitry.


==Original Abstract Submitted==

A microelectronic device includes a stack structure comprising a vertically alternating sequence of conductive material and insulative material arranged in tiers, the stack structure divided into blocks by filled slot structures, each of the blocks comprising: a memory array region; staircase structures having steps; and crest regions interposed in a first horizontal direction between horizontally neighboring pairs of the staircase structures, and contact structures within the first crest region of each of the blocks and vertically extending through the stack structure to a source tier underlying the stack structure, the contact structures comprising: first contact structures in electrical communication with control logic circuitry; and second contact structures electrically isolated from the control logic circuitry, at least some the first contact structures relatively more centrally positioned with each of the blocks in a second horizontal direction orthogonal to the first horizontal direction than at least some of the second contact structures.



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