View source for 17644466. SELF-ALIGNED, SYMMETRIC PHASE CHANGE MEMORY ELEMENT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

=SELF-ALIGNED, SYMMETRIC PHASE CHANGE MEMORY ELEMENT=


==Organization Name==

[[:Category:INTERNATIONAL BUSINESS MACHINES CORPORATION|INTERNATIONAL BUSINESS MACHINES CORPORATION]]


[[Category:INTERNATIONAL BUSINESS MACHINES CORPORATION]]

==Inventor(s)==

[[:Category:Kangguo Cheng of Schenectady NY (US)|Kangguo Cheng of Schenectady NY (US)]][[Category:Kangguo Cheng of Schenectady NY (US)]]

[[:Category:ZUOGUANG Liu of Schenectady NY (US)|ZUOGUANG Liu of Schenectady NY (US)]][[Category:ZUOGUANG Liu of Schenectady NY (US)]]

[[:Category:Juntao Li of Cohoes NY (US)|Juntao Li of Cohoes NY (US)]][[Category:Juntao Li of Cohoes NY (US)]]

[[:Category:Arthur Gasasira of HALFMOON NY (US)|Arthur Gasasira of HALFMOON NY (US)]][[Category:Arthur Gasasira of HALFMOON NY (US)]]

==SELF-ALIGNED, SYMMETRIC PHASE CHANGE MEMORY ELEMENT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17644466 titled 'SELF-ALIGNED, SYMMETRIC PHASE CHANGE MEMORY ELEMENT

==Simplified Explanation==

The abstract describes a patent application for a phase change memory element. Here is a simplified explanation of the abstract:

* The patent application is for a phase change memory element that consists of a phase change material layer and a heater conductor.
* The heater conductor is surrounded by the phase change material layer.
* The memory element is symmetrical in design.
* The memory element also includes a top electrode that surrounds and connects to the phase change material layer, and a bottom electrode that is in contact with the heater conductor.
* Additionally, the memory element may include a resistive liner that is in contact with the phase change material layer.

Potential applications of this technology:

* Phase change memory elements can be used in various electronic devices, such as computers, smartphones, and tablets.
* They can be used for data storage and retrieval in these devices.
* The symmetrical design of the memory element allows for more efficient and reliable operation.

Problems solved by this technology:

* The symmetrical design of the memory element helps to eliminate any potential imbalances or inconsistencies in the phase change material layer.
* The use of a resistive liner can help to improve the performance and reliability of the memory element.

Benefits of this technology:

* The symmetrical design and use of a resistive liner contribute to the overall efficiency and reliability of the memory element.
* The memory element can provide faster data storage and retrieval compared to traditional memory technologies.
* It can also have a longer lifespan and lower power consumption.


==Original Abstract Submitted==

A phase change memory element including at least one phase change material layer, and a heater conductor, wherein at least a portion of the heater conductor is circumferentially surrounded by the at least one phase change material layer. The phase change memory element is symmetrical. The phase change memory element can include a top electrode circumferentially surrounding and connected to the at least one phase change material layer, and a bottom electrode in contact with the heater conductor. The phase change memory element can include at least one resistive liner in contact with the at least one phase change material layer.



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