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Category:Kirby Maxey of Hillsboro OR (US)
Pages in category "Kirby Maxey of Hillsboro OR (US)"
The following 19 pages are in this category, out of 19 total.
1
- 17849207. MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES IN AN INTERCONNECT STACK THEREOF simplified abstract (Intel Corporation)
- 17850078. SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHALCOGENIDE GROWTH FOR STACKED 2D CHANNELS simplified abstract (Intel Corporation)
- 17850623. STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED GROWTH simplified abstract (Intel Corporation)
- 17852016. 2D LAYERED GATE OXIDE simplified abstract (Intel Corporation)
- 18091192. TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DICHALCOGENIDE LAYERS OUTSIDE OF THE CHANNEL REGION simplified abstract (Intel Corporation)
- 18091201. BEOL CONTACT METALS FOR 2D TRANSISTORS simplified abstract (Intel Corporation)
- 18091206. SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS simplified abstract (Intel Corporation)
- 18091211. 2D NANORIBBONS UTILIZING SILICON SCAFFOLDING simplified abstract (Intel Corporation)
- 18091279. PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL SYNTHESIS simplified abstract (Intel Corporation)
- 18092152. TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL SUPPORTS simplified abstract (Intel Corporation)
- 18147636. ION BEAM LITHOGRAPHY AND NANOENGINEERING simplified abstract (Intel Corporation)
I
- Intel corporation (20240186416). TMD INVERTED NANOWIRE INTEGRATION simplified abstract
- Intel corporation (20240222073). ION BEAM LITHOGRAPHY AND NANOENGINEERING simplified abstract
- Intel corporation (20240222113). PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL SYNTHESIS simplified abstract
- Intel corporation (20240222428). SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS simplified abstract
- Intel corporation (20240222461). BEOL CONTACT METALS FOR 2D TRANSISTORS simplified abstract
- Intel corporation (20240222482). TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DICHALCOGENIDE LAYERS OUTSIDE OF THE CHANNEL REGION simplified abstract
- Intel corporation (20240222483). 2D NANORIBBONS UTILIZING SILICON SCAFFOLDING simplified abstract
- Intel corporation (20240222484). TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL SUPPORTS simplified abstract