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Category:H10B43/23
Subcategories
This category has the following 3 subcategories, out of 3 total.
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Pages in category "H10B43/23"
The following 12 pages are in this category, out of 12 total.
1
- 18514991. SEMICONDUCTOR MEMORY DEVICE (SK hynix Inc.)
- 18586255. THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 19012445. THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER (Samsung Electronics Co., Ltd.)
S
- Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract
- Samsung electronics co., ltd. (20250151331). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER
- Samsung Electronics Co., Ltd. patent applications on July 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 8th, 2025
- Sk hynix inc. (20240244841). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract
- Sk hynix inc. (20240422972). SEMICONDUCTOR MEMORY DEVICE
- SK hynix Inc. patent applications on December 19th, 2024
- SK hynix Inc. patent applications on July 18th, 2024