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Category:H01L43/12
Pages in category "H01L43/12"
The following 73 pages are in this category, out of 73 total.
1
- 17412665. METHOD AND STRUCTURE FOR IMPROVED MEMORY INTEGRITY AT ARRAY BOUNDARIES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17454570. LEVELING DIELECTRIC SURFACES FOR CONTACT FORMATION WITH EMBEDDED MEMORY ARRAYS simplified abstract (International Business Machines Corporation)
- 17455226. EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY TOP ELECTRODE STRUCTURE simplified abstract (International Business Machines Corporation)
- 17455737. SELF-ALIGNED CROSSBAR-COMPATIBLE ELECTROCHEMICAL MEMORY STRUCTURE simplified abstract (International Business Machines Corporation)
- 17456088. Memory Device with Spin-Harvesting Structure simplified abstract (International Business Machines Corporation)
- 17457565. TOP ELECTRODE TO METAL LINE CONNECTION FOR MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY STACK HEIGHT REDUCTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17520672. ETCHING OF MAGNETIC TUNNEL JUNCTION (MTJ) STACK FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM) simplified abstract (International Business Machines Corporation)
- 17526646. MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING simplified abstract (International Business Machines Corporation)
- 17530690. INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE simplified abstract (International Business Machines Corporation)
- 17534485. MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM) WITH PRESERVED UNDERLYING DIELECTRIC LAYER simplified abstract (International Business Machines Corporation)
- 17540389. UNIFORMLY PATTERNED TWO-TERMINAL DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17541401. DIELECTRIC FILL FOR TIGHT PITCH MRAM PILLAR ARRAY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17542696. SUBTRACTIVE TOP VIA AS A BOTTOM ELECTRODE CONTACT FOR AN EMBEDDED MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17544150. MAGNETIC TUNNEL JUNCTION WITH AN ETCHED BOTTOM ELECTRODE HAVING NON-PLANAR SIDEWALLS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545485. MAGNETIC TUNNEL JUNCTION PILLAR FORMATION FOR MRAM DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548828. MEMORY ELEMENT WITH A HARDMASK STACK HAVING DIFFERENT STRESS LEVELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550200. RECESSED LOCAL INTERCONNECT SEMICONDUCTOR MEMORY DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643582. MRAM BOTTOM ELECTRODE CONTACT WITH TAPER PROFILE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643594. PILLAR MEMORY TOP CONTACT LANDING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644098. LAYERED BOTTOM ELECTRODE DIELECTRIC FOR EMBEDDED MRAM simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644349. MODIFIED TOP ELECTRODE CONTACT FOR MRAM EMBEDDING IN ADVANCED LOGIC NODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644449. MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH SEGMENTED BOTTOM ELECTRODE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17689784. INTEGRATED CIRCUIT STRUCTURE AND FABRICATION THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17690728. BIT-LINE RESISTANCE REDUCTION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17696968. METHODS OF MANUFACTURING MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17748127. EMBEDDED DEVICE INCLUDING MRAM DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17806511. DAMASCENE MRAM DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806594. SIMULTANEOUS ELECTRODES FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806750. MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH TAPERED SIDEWALLS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808561. MRAM DEVICE WITH SELF-ALIGNED BOTTOM ELECTRODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808642. BEVELED MAGNETO-RESISTIVE RANDOM ACCESS MEMORY PILLAR STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17817441. MAGNETIC MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17832601. MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17838235. MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17887042. SPIN-ORBIT TORQUE MAGNETIC RANDOM-ACCESS MEMORY (SOT-MRAM) DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17931664. MRAM WITH DOPED SILICON-GERMANIUM-TIN ALLOY ELECTRODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931689. MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH TOP AND BOTTOM ELECTRODES DEPOSITED IN UNISON simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932691. MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER simplified abstract (International Business Machines Corporation)
- 17942822. Pillar Based Memory (MRAM) Embedded within the Buried Power Rail within a Backside Power Distribution Network simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17952808. MAGNETIC MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17956244. BACKSIDE MRAM WITH FRONTSIDE DEVICES simplified abstract (International Business Machines Corporation)
- 17956281. SPUTTERING APPARATUS AND METHOD OF FABRICATING MAGNETIC MEMORY DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17956938. SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL simplified abstract (International Business Machines Corporation)
- 17962496. CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulation Layer simplified abstract (International Business Machines Corporation)
- 17981734. Dual Magnetic Tunnel Junction Devices For Magnetic Random Access Memory (Mram) simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17985804. FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18064367. MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
I
- International business machines corporation (20240099148). MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER simplified abstract
- International business machines corporation (20240105244). STACKED FET WITH THREE-TERMINAL SOT MRAM simplified abstract
- International business machines corporation (20240107894). MRAM DEVICE WITH ANNULAR ELECTRODES simplified abstract
- International business machines corporation (20240112712). SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL simplified abstract
- International business machines corporation (20240114699). BACKSIDE MRAM WITH FRONTSIDE DEVICES simplified abstract
- International business machines corporation (20240122076). CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulation Layer simplified abstract
- International business machines corporation (20240130242). TOP CONTACT STRUCTURE FOR EMBEDDED MRAM simplified abstract
- International business machines corporation (20240130243). MAGNETIC TUNNEL JUNCTION DEVICE simplified abstract
- International business machines corporation (20240130244). CHAMFERED MRAM DEVICE STRUCTURE simplified abstract
- International business machines corporation (20240130245). MRAM DEVICE STRUCTURE WITH IMPROVED TOP ELECTRODE simplified abstract
- International business machines corporation (20240164219). FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER simplified abstract
- International business machines corporation (20240188448). MULTIPLE LAYERS OF VOID-FREE INTERLAYER DIELECTRIC BETWEEN ADJACENT MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES simplified abstract
- International Business Machines Corporation patent applications on April 11th, 2024
- International Business Machines Corporation patent applications on April 18th, 2024
- International Business Machines Corporation patent applications on April 4th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on January 25th, 2024
- International Business Machines Corporation patent applications on June 6th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 28th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on May 16th, 2024
U
- US Patent Application 17804795. MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH HEMISPHERICAL TOP ELECTRODE simplified abstract
- US Patent Application 17827998. MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- US Patent Application 17900892. MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 17971775. MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE MAGNETO-RESISTIVE ELEMENT simplified abstract