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Category:H01L29/49
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Pages in category "H01L29/49"
The following 200 pages are in this category, out of 508 total.
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- 17455941. STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET simplified abstract (International Business Machines Corporation)
- 17545610. STACKED FETS WITH NON-SHARED WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17637479. THIN FILM TRANSISTOR, DISPLAY PANEL AND DISPLAY DEVICE simplified abstract (BOE Technology Group Co., Ltd.)
- 17700998. METAL GATE FIN ELECTRODE STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17731615. SEMICONDUCTOR DEVICES HAVING STRESSED ACTIVE REGIONS THEREIN THAT SUPPORT ENHANCED CARRIER MOBILITY simplified abstract (Samsung Electronics Co., Ltd.)
- 17741270. SEMICONDUCTOR DEVICES WITH METAL INTERCALATED HIGH-K CAPPING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17809030. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17818933. 2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 17833749. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Micron Technology, Inc.)
- 17836399. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17843970. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17849154. DEVICE WITH MODIFIED WORK FUNCTION LAYER AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17852658. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17892415. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17894169. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17933568. VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract (QUALCOMM Incorporated)
- 17945528. FERROELECTRIC MATERIAL, AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17956296. TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract (Intel Corporation)
- 17958293. EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract (Intel Corporation)
- 17958805. SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17983856. SEMICONDUCTOR ELEMENT AND MULTIPLEXER INCLUDING A PLURALITY OF SEMICONDUCTOR ELEMENTS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17994106. SEMICONDUCTOR DEVICE WITH ENERGY-REMOVABLE LAYER AND METHOD FOR FABRICATING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 17996787. THIN FILM TRANSISTOR AND ELECTRONIC DEVICE simplified abstract (Wuhan China Star Optoelectronics Technology Co., Ltd.)
- 18028114. METAL OXIDE THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
- 18046656. SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF CHANNEL LAYERS simplified abstract (Samsung Electronics Co., Ltd.)
- 18053157. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18070050. NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18111995. DEVICE WITH WORKFUNCTION METAL IN DRIFT REGION simplified abstract (GlobalFoundries U.S. Inc.)
- 18119953. SEMICONDUCTOR DEVICE WITH CAPPING LAYER simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18150809. SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18150861. Volume-less Fluorine Incorporation Method simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18151575. METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152421. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152790. TRANSISTOR GATE STACK FORMATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18152938. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18153571. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18153597. AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18154614. SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18155887. SILICIDE-SANDWICHED SOURCE/DRAIN REGION AND METHOD OF FABRICATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18158641. Semiconductor Device and Method of Manufacture simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18164600. SEMICONDUCTOR DEVICE AND MEHTOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18183551. GATE STRUCTURES IN SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18185285. Low Leakage Replacement Metal Gate FET simplified abstract (Murata Manufacturing Co., Ltd.)
- 18187801. INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT simplified abstract (Intel Corporation)
- 18188964. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18189411. DIFFERENT WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18202085. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18219238. SEMICONDUCTOR DEVICE WITH SPACER AND METHOD FOR FABRICATING THE SAME (NANYA TECHNOLOGY CORPORATION)
- 18224864. SEMICONDUCTOR DEVICE COMPRISING ALIGNMENT KEY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18232549. ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18234129. CONTACT ARRANGEMENTS FOR TRANSISTORS simplified abstract (Micron Technology, Inc.)
- 18298678. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18307620. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SK hynix Inc.)
- 18308026. DIELECTRIC GAS SPACER FORMATION FOR REDUCING PARASITIC CAPACITANCE IN A TRANSISTOR INCLUDING NANOSHEET STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18322234. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18323587. SELECTIVE SILICIDE FOR STACKED MULTI-GATE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18332054. THRESHOLD VOLTAGE TUNING USING A MULTIPLE DIPOLE LOOP PROCESS FOR CFET DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18333819. INVERTED GATE CUT REGION (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18338869. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18341865. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18343203. P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES (Intel Corporation)
- 18346977. METHOD OF REDUCING VOIDS AND SEAMS IN TRENCH STRUCTURES BY FORMING SEMI-AMORPHOUS POLYSILICON simplified abstract (Texas Instruments Incorporated)
- 18364521. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18368114. SEMICONDUCTOR DEVICE WITH ENERGY-REMOVABLE LAYER simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18368387. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18370287. INTEGRATED CIRCUIT STRUCTURES WITH PATCH SPACERS (Intel Corporation)
- 18370663. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18379083. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18380930. SEMICONDUCTOR DEVICE WITH CAPPING LAYER AND METHOD FOR FABRICATING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18382688. SEMICONDUCTOR DEVICE WITH SPACER AND METHOD FOR FABRICATING THE SAME (NANYA TECHNOLOGY CORPORATION)
- 18388419. Gate Structures For Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18390018. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18392870. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18397700. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18402852. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18404831. Gate Patterning for Stacked Device Structure simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18405099. PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18418678. Gate Structures in Transistors and Method of Forming Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18421398. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18421681. GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18428198. ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18432694. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18433864. INSULATING FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18435231. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18438575. FORMING METAL CONTACTS ON METAL GATES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18442590. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18443994. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18447580. MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18454609. DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG DISPLAY CO., LTD.)
- 18468317. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18471715. INTERCONNECTION LAYER STRUCTURES INCLUDING TWO-DIMENSIONAL (2D) MATERIAL, ELECTRONIC DEVICES INCLUDING INTERCONNECTION LAYER STRUCTURES, AND ELECTRONIC APPARATUSES INCLUDING ELECTRONIC DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18478280. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18478365. THRESHOLD VOLTAGE TUNING OF NFET VIA IMPLEMENTATION OF AN ALUMINUM-FREE CONDUCTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18478373. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18479934. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Japan Display Inc.)
- 18499871. METAL SENSE LINE CONTACT simplified abstract (Micron Technology, Inc.)
- 18500275. SEMICONDUCTOR STRUCTURE WITH NITRIDE CAPS simplified abstract (Micron Technology, Inc.)
- 18509468. THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18509825. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18511064. WORK FUNCTION DESIGN TO INCREASE DENSITY OF NANOSHEET DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18514318. Thin Film Transistor and Display Device Including the Same simplified abstract (LG Display Co., Ltd.)
- 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519964. SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS simplified abstract (Micron Technology, Inc.)
- 18521584. FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522064. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522265. METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526290. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526429. METHOD FOR FORMING SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18527151. SEMICONDUCTOR DEVICE HAVING METAL GATE AND POLY GATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18531078. ELECTRONIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18581162. CONTACT FORMATION METHOD AND RELATED STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18585978. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18587381. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18591799. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18591923. GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18592204. SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)
- 18592204. SEMICONDUCTOR DEVICE (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18596115. MEMORY DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18596461. SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS simplified abstract (Samsung Electronics Co., Ltd.)
- 18597952. METHODS OF FORMING FINFET DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18598934. NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18599522. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18601167. GATE ELECTRODE DEPOSITION IN STACKING TRANSISTORS AND STRUCTURES RESULTING THEREFROM (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18604713. SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18608294. SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH simplified abstract (Intel Corporation)
- 18609539. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18610318. SEMICONDUCTOR DEVICE WITH BACKSIDE POWER RAIL AND METHODS OF FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18611143. WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM simplified abstract (ROHM CO., LTD.)
- 18615255. SILICIDE-LAYER-COUPLED DOPED PORTION OF ACTIVE REGION AND METHOD OF FABRICATING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18619633. Selective Formation Of Titanium Silicide And Titanium Nitride By Hydrogen Gas Control simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18622615. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS simplified abstract (Intel Corporation)
- 18628112. AIR SPACERS FOR SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18634854. THIN-FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME simplified abstract (LG Display Co., Ltd.)
- 18649713. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18651184. MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS simplified abstract (Sony Group Corporation)
- 18658521. AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18660318. Adjusting Work Function Through Adjusting Deposition Temperature simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18660461. NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18669052. AIR GAP IN INNER SPACERS AND METHODS OF FABRICATING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18669199. EFFECTIVE WORK FUNCTION TUNING VIA SILICIDE INDUCED INTERFACE DIPOLE MODULATION FOR METAL GATES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18669624. FinFET Structures and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18670557. SEMICONDUCTOR DEVICE WITH METAL CAP ON GATE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18671060. THIN FILM TRANSISTOR AND DISPLAY DEVICE simplified abstract (Japan Display Inc.)
- 18671164. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18671580. Air Gap Seal for Interconnect Air Gap and Method of Fabricating Thereof simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18671941. WORK FUNCTION METAL GATE DEVICE simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18674589. INTRODUCING FLUORINE TO GATE AFTER WORK FUNCTION METAL DEPOSITION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18675249. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18678538. Semiconductor Device simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18731602. SEMICONDUCTOR DEVICE STRUCTURE WITH WORK FUNCTION LAYER AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18731945. REDUCING PATTERN LOADING IN THE ETCH-BACK OF METAL GATE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18738930. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18743588. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18744905. SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18746818. INPUT/OUTPUT SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18752172. SEMICONDUCTOR DEVICES WITH AIR GATE SPACER AND AIR GATE CAP simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18753130. Metal Gates and Methods of Forming Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18754468. Gate Structures For Semiconductor Devices simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18755342. MULTI-GATE DEVICE AND RELATED METHODS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18756682. SEMICONDUCTOR DEVICES WITH FERROELECTRIC LAYER AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18757060. INTEGRATED CIRCUITS WITH RECESSED GATE ELECTRODES simplified abstract (Intel Corporation)
- 18761378. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18782379. WIDE BANDGAP SEMICONDUCTOR DEVICE (FUJI ELECTRIC CO., LTD.)
- 18814858. DISPLAY DEVICE (Japan Display Inc.)
- 18817672. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18818786. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18818855. NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME (Samsung Electronics Co., Ltd.)
- 18822592. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE (Kioxia Corporation)
- 18888191. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (United Microelectronics Corp.)
- 18891861. Low Leakage FET (Murata Manufacturing Co., Ltd.)
- 18895017. SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18902032. DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS (SONY GROUP CORPORATION)
- 18955290. SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
- 18962707. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18962886. SEMICONDUCTOR DEVICE WITH SILICIDE GATE FILL STRUCTURE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18966387. INTEGRATED ASSEMBLIES HAVING VERTICALLY-SPACED CHANNEL MATERIAL SEGMENTS, AND METHODS OF FORMING INTEGRATED ASSEMBLIES (Lodestar Licensing Group LLC)
- 18967144. NON-PLANAR I/O AND LOGIC SEMICONDUCTOR DEVICES HAVING DIFFERENT WORKFUNCTION ON COMMON SUBSTRATE (Intel Corporation)
- 18967403. Transistor Gates and Method of Forming (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18969035. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18969172. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (UNITED MICROELECTRONICS CORP.)
- 18969191. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (UNITED MICROELECTRONICS CORP.)
- 18969201. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (UNITED MICROELECTRONICS CORP.)
- 18970001. METHODS FOR DEPOSITING A MOLYBDENUM NITRIDE FILM ON A SURFACE OF A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES INCLUDING A MOLYBDENUM NITRIDE FILM (ASM IP Holding B.V.)
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- Blockchain patent applications on 22nd Mar 2024
- Blockchain patent applications on March 14th, 2024
- Blockchain patent applications on March 21st, 2024
- Boe technology group co., ltd. (20240304698). METAL OXIDE THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE simplified abstract
- BOE TECHNOLOGY GROUP CO., LTD. patent applications on September 12th, 2024
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- Intel corporation (20240105508). INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM simplified abstract
- Intel corporation (20240105822). STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract
- Intel corporation (20240105852). TOP-GATE DOPED THIN FILM TRANSISTOR simplified abstract
- Intel corporation (20240113116). EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract
- Intel corporation (20240113212). TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract
- Intel corporation (20240128269). VOLTAGE REGULATOR CIRCUIT INCLUDING ONE OR MORE THIN-FILM TRANSISTORS simplified abstract
- Intel corporation (20240186398). INTEGRATED CIRCUIT STRUCTURES WITH CAVITY SPACERS simplified abstract
- Intel corporation (20240203739). DIELECTRIC LAYER STACK FOR WIDE GATE CUT STRUCTURES simplified abstract
- Intel corporation (20240204103). TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS simplified abstract