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Category:H01L29/20
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Pages in category "H01L29/20"
The following 200 pages are in this category, out of 294 total.
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- 17933882. COMPOSITE NANOSHEET TUNNEL TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17936380. SEMICONDUCTOR EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE simplified abstract (Huawei Technologies Co., Ltd.)
- 17958094. TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract (Intel Corporation)
- 17984025. 3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18038193. SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR SUBSTRATE simplified abstract (KYOCERA Corporation)
- 18088542. GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY simplified abstract (Intel Corporation)
- 18088545. GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS simplified abstract (Intel Corporation)
- 18089966. TRANSISTOR IN A SILICON CARBIDE LAYER AND A TRANSISTOR IN A GALLIUM NITRIDE LAYER IN A CASCODE DESIGN simplified abstract (Intel Corporation)
- 18145625. III-N DEVICE WITH PLANARIZED TOPOLOGICAL STRUCTURE simplified abstract (Texas Instruments Incorporated)
- 18147525. NANOSHEET DEVICE WITH NITRIDE ISOLATION STRUCTURES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18163293. SEMICONDUCTOR DEVICE simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18166391. HYBRID GATE FIELD EFFECT TRANSISTOR, METHOD FOR PREPARING HYBRID GATE FIELD EFFECT TRANSISTOR, AND SWITCH CIRCUIT simplified abstract (Huawei Technologies Co., Ltd.)
- 18171988. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18176453. NITRIDE SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177318. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18180657. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18181042. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18189870. HIGH BAND-GAP DEVICES WITH SELF-ALIGNED CONTACT simplified abstract (Texas Instruments Incorporated)
- 18193859. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18264202. NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)
- 18264561. SEMICONDUCTOR DEVICE simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)
- 18274223. NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18278795. SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARATUS FOR MANUFACTURING THE SAME, AND TEMPLATE SUBSTRATE simplified abstract (KYOCERA Corporation)
- 18321284. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18329881. BUFFER STRUCTURE WITH INTERLAYER BUFFER LAYERS FOR HIGH VOLTAGE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18335492. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS simplified abstract (Samsung Electronics Co., Ltd.)
- 18336382. GALLIUM NITRIDE DEVICE WITH ARTIFICIAL FIELD PLATES (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18341916. AMPLIFIER AND MIXER IN A III-V MATERIAL FOR WIDEBAND SUB-TERAHERTZ COMMUNICATION (Intel Corporation)
- 18347223. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18361647. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18370134. WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER WIDTHS simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18370144. WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18373357. WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18373360. WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OUTSIDE OF TRANSISTOR LAYOUT simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18389625. INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TESTING simplified abstract (Intel Corporation)
- 18397224. SEMICONDUCTOR DEVICE simplified abstract (Japan Display Inc.)
- 18403080. FIELD-EFFECT TRANSISTOR, AND METHOD OF PRODUCTION simplified abstract (Robert Bosch GmbH)
- 18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH)
- 18414811. AMORPHOUS BORON NITRIDE FILM, SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR INCLUDING SAME, AND METHOD OF MANUFACTURING BORON NITRIDE FILM simplified abstract (Samsung Electronics Co., Ltd.)
- 18434940. NITRIDE SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18434981. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18454444. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18454444. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18455993. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract (Kabushiki Kaisha Toshiba)
- 18455993. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18463417. FIELD EFFECT TRANSISTOR, PREPARATION METHOD THEREOF, AND SWITCH CIRCUIT simplified abstract (Huawei Technologies Co., Ltd.)
- 18466206. VERTICAL MULTICHANNEL GALLIUM NITRIDE TRANSISTOR simplified abstract (Robert Bosch GmbH)
- 18466223. SEMICONDUCTOR ELEMENT WITH SHIELDING simplified abstract (Robert Bosch GmbH)
- 18467961. SEMICONDUCTOR ELEMENTS WITH FIELD SHIELDING BY POLARIZATION DOPING simplified abstract (Robert Bosch GmbH)
- 18484430. SEMICONDUCTOR POWER DEVICE (Industrial Technology Research Institute)
- 18485740. SUPERLATTICE BUFFER STRUCTURE AND SEMICONDUCTOR DEVICE HAVING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18488085. NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18488729. VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER simplified abstract (Robert Bosch GmbH)
- 18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18513404. HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.)
- 18532505. LAMINATE AND METHOD OF MANUFACTURING LAMINATE simplified abstract (Japan Display Inc.)
- 18533262. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18533315. INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18539610. NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
- 18539610. NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18553151. INTEGRATION OF BORON ARSENIDE INTO POWER DEVICES AND SEMICONDUCTORS FOR THERMAL MANAGEMENT simplified abstract (The Regents of the University of California)
- 18554921. SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18557252. VERTICAL TRANSISTORS AND METHOD FOR PRODUCING THE SAME simplified abstract (Robert Bosch GmbH)
- 18560422. IN SITU DAMAGE FREE ETCHING OF Ga2O3 USING Ga FLUX FOR FABRICATING HIGH ASPECT RATIO 3D STRUCTURES simplified abstract (Ohio State Innovation Foundation)
- 18573440. SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND WIRELESS COMMUNICATION APPARATUS simplified abstract (SONY GROUP CORPORATION)
- 18579634. SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND WIRELESS COMMUNICATION APPARATUS simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
- 18587221. METHOD AND DEVICE FOR PRODUCING A LOW-DEFECT INTERFACE simplified abstract (Robert Bosch GmbH)
- 18591344. HEMT DEVICE HAVING A REDUCED GATE LEAKAGE AND MANUFACTURING PROCESS THEREOF simplified abstract (STMicroelectronics International N.V.)
- 18591480. PULSE WIDTH MODULATION CIRCUIT simplified abstract (STMicroelectronics International N.V.)
- 18592325. GALLIUM NITRIDE COMPONENT, METHOD FOR MANUFACTURING GALLIUM NITRIDE COMPONENT, AND ELECTRONIC DEVICE simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18592816. HEMT DEVICE HAVING A REDUCED ON-RESISTANCE AND MANUFACTURING PROCESS THEREOF simplified abstract (STMicroelectronics International N.V.)
- 18599374. FIELD EFFECT TRANSISTOR, PREPARATION METHOD THEREOF, AND ELECTRONIC CIRCUIT simplified abstract (Huawei Technologies Co., Ltd.)
- 18602050. NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR MODULE simplified abstract (ROHM CO., LTD.)
- 18608890. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18608940. HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATING METHOD OF THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18611143. WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM simplified abstract (ROHM CO., LTD.)
- 18614735. HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18623278. n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD simplified abstract (Mitsubishi Chemical Corporation)
- 18646914. INTEGRATED CIRCUIT, MANUFACTURING METHOD THEREOF, POWER AMPLIFIER, AND ELECTRONIC DEVICE simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18652013. SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME simplified abstract (ROHM Co., LTD.)
- 18669392. SEMICONDUCTOR DEVICE WITH FERROELECTRIC ALUMINUM NITRIDE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18675098. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18675105. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (United Microelectronics Corp.)
- 18676114. SEMICONDUCTOR DEVICE, INSPECTION APPARATUS OF SEMICONDUCTOR DEVICE, AND METHOD FOR INSPECTING SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18676360. HIGH ELECTRON MOBILITY TRANSISTOR, RADIO FREQUENCY TRANSISTOR, POWER AMPLIFIER, AND PREPARATION METHOD FOR HIGH ELECTRON MOBILITY TRANSISTOR simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18676612. SEMICONDUCTOR COMPONENT AND ELECTRONIC DEVICE simplified abstract (Huawei Technologies Co., Ltd.)
- 18712840. ANTENNA MODULE AND MANUFACTURING METHOD THEREOF simplified abstract (SHIN-ETSU CHEMICAL CO., LTD.)
- 18731392. HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME simplified abstract (United Microelectronics Corp.)
- 18732645. HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME simplified abstract (United Microelectronics Corp.)
- 18740558. NITRIDE SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18742179. NITRIDE SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18743061. HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME simplified abstract (United Microelectronics Corp.)
- 18756202. GROUP III-N DEVICE INCLUDING SOURCE CONTACT CONNECTED TO SUBSTRATE THROUGH TRENCH (Texas Instruments Incorporated)
- 18770484. SCHOTTKY BARRIER DIODE AND METHOD OF MANUFACTURING THE SAME (ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE)
- 18782379. WIDE BANDGAP SEMICONDUCTOR DEVICE (FUJI ELECTRIC CO., LTD.)
- 18798916. NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (ROHM CO., LTD.)
- 18801879. NITRIDE SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18813593. SEMICONDUCTOR PACKAGE (ROHM CO., LTD.)
- 18815864. HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME (UNITED MICROELECTRONICS CORP.)
- 18823149. SEMICONDUCTOR DEVICE, WIRELESS COMMUNICATION DEVICE, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE (Fujitsu Limited)
- 18888136. HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME (United Microelectronics Corp.)
- 18888811. MULTI-DIE-TO-WAFER HYBRID BONDING (Murata Manufacturing Co., Ltd.)
- 18890816. NITRIDE SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18892494. SEMICONDUCTOR DEVICE (United Microelectronics Corp.)
- 18894473. SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION (Nuvoton Technology Corporation Japan)
- 18894495. SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION (Nuvoton Technology Corporation Japan)
- 18895404. NITRIDE SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18946839. COMPOUND SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF (UNITED MICROELECTRONICS CORP.)
- 18946849. HEMT WITH STAIR-LIKE COMPOUND LAYER AT DRAIN (UNITED MICROELECTRONICS CORP.)
- 18948697. STACKED STRUCTURE, FABRICATION METHOD OF THE STACKED STRUCTURE, AND SEMICONDUCTOR DEVICE INCLUDING THE STACKED STRUCTURE (Japan Display Inc.)
- 18960198. POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME (Samsung Electronics Co., Ltd.)
- 18961728. HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18964699. NITRIDE SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18967990. SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME (ROHM CO., LTD.)
2
- 20240014306. Semiconductor Structure with Features of D-mode and E-mode GaN Devices and Semiconductor Process Thereof simplified abstract (United Microelectronics Corp.)
- 20240021678. PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIER REGIONS simplified abstract (MACOM Technology Solutions Holdings, Inc.)
- 20240030303. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (ROHM CO., LTD.)
- 20240039486. COMPOUND SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR DEVICE, AND AMPLIFIER simplified abstract (Fujitsu Limited)
- 20240047451. NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING THE SAME simplified abstract (INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.)
- 20240055509. NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.)
A
B
- Blockchain patent applications on February 15th, 2024
- Blockchain patent applications on February 1st, 2024
- Blockchain patent applications on February 8th, 2024
- Blockchain patent applications on January 11th, 2024
- Blockchain patent applications on January 18th, 2024
- Blockchain patent applications on January 25th, 2024
- Blockchain patent applications on March 28th, 2024
- Blockchain patent applications on May 16th, 2024
E
H
- Huawei technologies co., ltd. (20240113103). INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD simplified abstract
- Huawei technologies co., ltd. (20240204094). GALLIUM NITRIDE COMPONENT, METHOD FOR MANUFACTURING GALLIUM NITRIDE COMPONENT, AND ELECTRONIC DEVICE simplified abstract
- Huawei technologies co., ltd. (20240213322). FIELD EFFECT TRANSISTOR, PREPARATION METHOD THEREOF, AND ELECTRONIC CIRCUIT simplified abstract
- Huawei technologies co., ltd. (20240258418). TRANSISTOR DEVICES, POWER DEVICES, AND METHOD OF MANUFACTURING THEREOF simplified abstract
- Huawei technologies co., ltd. (20240274688). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, POWER AMPLIFICATION CIRCUIT, AND ELECTRONIC DEVICE simplified abstract
- Huawei technologies co., ltd. (20240297245). INTEGRATED CIRCUIT, MANUFACTURING METHOD THEREOF, POWER AMPLIFIER, AND ELECTRONIC DEVICE simplified abstract
- Huawei technologies co., ltd. (20240313069). SEMICONDUCTOR COMPONENT AND ELECTRONIC DEVICE simplified abstract
- Huawei technologies co., ltd. (20240322029). HIGH ELECTRON MOBILITY TRANSISTOR, RADIO FREQUENCY TRANSISTOR, POWER AMPLIFIER, AND PREPARATION METHOD FOR HIGH ELECTRON MOBILITY TRANSISTOR simplified abstract
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on April 4th, 2024
- Huawei Technologies Co., Ltd. patent applications on August 15th, 2024
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on August 1st, 2024
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on June 20th, 2024
- Huawei Technologies Co., Ltd. patent applications on June 27th, 2024
- Huawei Technologies Co., Ltd. patent applications on September 19th, 2024
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on September 26th, 2024
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on September 5th, 2024
I
- Intel corporation (20240113220). TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract
- Intel corporation (20240194533). INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TESTING simplified abstract
- Intel corporation (20240203815). LAYER TRANSFER DIODE OR THIN-FILM RESISTOR FOR GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY simplified abstract
- Intel corporation (20240203978). LAYER TRANSFER CLAMP FOR GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY simplified abstract
- Intel corporation (20240203979). LAYER TRANSFER TRANSISTOR FOR GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY simplified abstract
- Intel corporation (20240204059). GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHNOLOGY simplified abstract
- Intel corporation (20240204091). LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR GROUP III-NITRIDE (III-N) DEVICES simplified abstract
- Intel corporation (20240213118). GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS simplified abstract
- Intel corporation (20240213331). GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY simplified abstract
- Intel corporation (20240222469). TRANSISTOR IN A SILICON CARBIDE LAYER AND A TRANSISTOR IN A GALLIUM NITRIDE LAYER IN A CASCODE DESIGN simplified abstract
- Intel corporation (20250006667). AMPLIFIER AND MIXER IN A III-V MATERIAL FOR WIDEBAND SUB-TERAHERTZ COMMUNICATION
- Intel Corporation (20250006667). AMPLIFIER AND MIXER IN A III-V MATERIAL FOR WIDEBAND SUB-TERAHERTZ COMMUNICATION
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on January 18th, 2024
- Intel Corporation patent applications on January 2nd, 2025
- Intel Corporation patent applications on January 30th, 2025
- Intel Corporation patent applications on July 4th, 2024
- Intel Corporation patent applications on June 13th, 2024
- Intel Corporation patent applications on June 20th, 2024
- INTEL CORPORATION patent applications on June 20th, 2024
- Intel Corporation patent applications on June 27th, 2024
- International business machines corporation (20240096947). COMPOSITE NANOSHEET TUNNEL TRANSISTORS simplified abstract
- International business machines corporation (20240222426). NANOSHEET DEVICE WITH NITRIDE ISOLATION STRUCTURES simplified abstract
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on July 4th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
J
K
- Kabushiki kaisha toshiba (20240096967). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240096969). NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Kabushiki kaisha toshiba (20240097000). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240312780). SEMICONDUCTOR DEVICE, INSPECTION APPARATUS OF SEMICONDUCTOR DEVICE, AND METHOD FOR INSPECTING SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313100). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Kabushiki kaisha toshiba (20240321977). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract
- Kabushiki kaisha toshiba (20240322027). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- KABUSHIKI KAISHA TOSHIBA patent applications on January 30th, 2025
- KABUSHIKI KAISHA TOSHIBA patent applications on March 14th, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on March 21st, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on September 19th, 2024
- Kabushiki Kaisha Toshiba patent applications on September 26th, 2024
M
- Mitsubishi electric corporation (20240266429). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Mitsubishi electric corporation (20240347403). SEMICONDUCTOR DEVICE simplified abstract
- Mitsubishi Electric Corporation patent applications on August 8th, 2024
- Mitsubishi Electric Corporation patent applications on January 23rd, 2025
- Mitsubishi Electric Corporation patent applications on October 17th, 2024
- Murata manufacturing co., ltd. (20250015029). MULTI-DIE-TO-WAFER HYBRID BONDING
- Murata Manufacturing Co., Ltd. patent applications on January 9th, 2025