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Category:H01L29/16
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Pages in category "H01L29/16"
The following 200 pages are in this category, out of 282 total.
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- 17690376. TWO-DIMENSIONAL MATERIAL STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE TWO-DIMENSIONAL MATERIAL STRUCTURE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17699463. FIELD EFFECT TRANSISTOR, ELECTRONIC APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE FIELD EFFECT TRANSISTOR simplified abstract (Samsung Electronics Co., Ltd.)
- 17703201. THIN FILM STRUCTURE AND ELECTRONIC DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL simplified abstract (Samsung Electronics Co., Ltd.)
- 17847787. METHOD FOR FORMING DUAL SILICIDE IN MANUFACTURING PROCESS OF SEMICONDUCTOR STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17945467. SEMICONDUCTOR DEVICE WITH GATE STRUCTURE AND CURRENT SPREAD REGION simplified abstract (Infineon Technologies AG)
- 17951474. INTERCONNECT STRUCTURE INCLUDING GRAPHENE-METAL BARRIER AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17977420. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 17981049. SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 17986119. Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18089494. DIRECT ELECTROPLATING ON MODIFIED POLYMER-GRAPHENE COMPOSITES simplified abstract (Intel Corporation)
- 18089936. COUPLING A LAYER OF SILICON CARBIDE WITH AN ADJACENT LAYER simplified abstract (Intel Corporation)
- 18089966. TRANSISTOR IN A SILICON CARBIDE LAYER AND A TRANSISTOR IN A GALLIUM NITRIDE LAYER IN A CASCODE DESIGN simplified abstract (Intel Corporation)
- 18096663. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.)
- 18138192. METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18139060. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Infineon Technologies AG)
- 18156049. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18157395. STRUCTURE OF ISOLATION FEATURE OF SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157416. SEMICONDUCTOR DEVICE INCLUDING GRAPHENE simplified abstract (Samsung Electronics Co., Ltd.)
- 18160002. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18160002. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18166126. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177210. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177245. SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177313. SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177324. SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18250580. VERTICAL SEMICONDUCTOR COMPONENT, AND METHOD FOR ITS PRODUCTION simplified abstract (Robert Bosch GmbH)
- 18271447. SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (Sumitomo Electric Industries, Ltd.)
- 18274223. NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18278421. SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
- 18321275. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18328192. NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18341916. AMPLIFIER AND MIXER IN A III-V MATERIAL FOR WIDEBAND SUB-TERAHERTZ COMMUNICATION (Intel Corporation)
- 18348646. SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18359241. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18364860. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18364860. SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18378710. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18382664. POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (HYUNDAI MOBIS CO., LTD.)
- 18389625. INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TESTING simplified abstract (Intel Corporation)
- 18399996. METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18403080. FIELD-EFFECT TRANSISTOR, AND METHOD OF PRODUCTION simplified abstract (Robert Bosch GmbH)
- 18405389. TRANSISTOR STRUCTURE INCLUDING AS-GROWN GRAPHENE AND SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18419973. FIELD EFFECT TRANSISTOR simplified abstract (DENSO CORPORATION)
- 18419973. FIELD EFFECT TRANSISTOR simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18426507. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18427508. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18431693. SEMICONDUCTOR DEVICE simplified abstract (Rohm Co., Ltd.)
- 18438894. METHOD FOR FABRICATING THE SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18441520. FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18442629. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18450656. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18450656. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18452581. CHANNEL STRUCTURES INCLUDING DOPED 2D MATERIALS FOR SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18453654. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18456071. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18456071. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18459172. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18459172. SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18462876. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18463237. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18463237. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18463755. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18463755. SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18467293. SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS simplified abstract (NEXPERIA B.V.)
- 18471463. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (DENSO CORPORATION)
- 18471463. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18483058. TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRUCTURES, ELECTRONIC DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE ELECTRONIC DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18489028. SEMICONDUCTOR MODULE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18491802. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18493130. SOLID-STATE IMAGE PICKUP UNIT AND ELECTRONIC APPARATUS simplified abstract (Sony Semiconductor Solutions Corporation)
- 18505569. SIC-BASED ELECTRONIC DEVICE WITH MULTILAYER AND MULTIFUNCTIONAL PASSIVATION, AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE simplified abstract (STMicroelectronics International N.V.)
- 18507621. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (DENSO CORPORATION)
- 18507621. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18508367. GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract (International Business Machines Corporation)
- 18518190. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18521014. SILICON CARBIDE SUBSTRATE, SILICON CARBIDE WAFER, AND SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
- 18521014. SILICON CARBIDE SUBSTRATE, SILICON CARBIDE WAFER, AND SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18521253. SEMICONDUCTOR DEVICE HAVING A PLURALITY OF CHANNEL LAYERS AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18521509. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18526582. SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS simplified abstract (Mitsubishi Electric Corporation)
- 18529792. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18529792. SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18532975. SCALABLE MPS DEVICE BASED ON SIC simplified abstract (STMICROELECTRONICS S.r.l.)
- 18533354. TRENCH GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (DENSO CORPORATION)
- 18533354. TRENCH GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18540524. COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE simplified abstract (Sony Group Corporation)
- 18543719. DIODE, FIELD EFFECT TRANSISTOR HAVING THE DIODE, AND METHOD FOR MANUFACTURING THE DIODE simplified abstract (DENSO CORPORATION)
- 18543719. DIODE, FIELD EFFECT TRANSISTOR HAVING THE DIODE, AND METHOD FOR MANUFACTURING THE DIODE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18545730. Tunneling Enabled Feedback FET simplified abstract (IMEC VZW)
- 18566092. SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER USING SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18568006. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (Sumitomo Electric Industries, Ltd.)
- 18580785. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
- 18581445. WAFER AND METHOD FOR MANUFACTURING THE SAME (Kabushiki Kaisha Toshiba)
- 18587335. SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18587742. METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18588586. SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18589893. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18594219. SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)
- 18594454. SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE (Kabushiki Kaisha Toshiba)
- 18596461. SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS simplified abstract (Samsung Electronics Co., Ltd.)
- 18598672. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18601062. CARRIER MODIFICATION DEVICES FOR AVOIDING CHANNEL LENGTH REDUCTION AND METHODS FOR FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 18603723. POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (HYUNDAI MOBIS CO., LTD.)
- 18608294. SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH simplified abstract (Intel Corporation)
- 18611143. WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM simplified abstract (ROHM CO., LTD.)
- 18613401. NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN DOPANT BLOCKING STRUCTURES INCLUDING A SUPERLATTICE simplified abstract (ATOMERA INCORPORATED)
- 18620327. METHOD FOR SEPARATING DIES FROM A SEMICONDUCTOR SUBSTRATE simplified abstract (Infineon Technologies AG)
- 18649713. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18650144. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18652013. SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME simplified abstract (ROHM Co., LTD.)
- 18654028. SiC SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18654238. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18670779. SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18679459. NANOWIRE TRANSISTOR AND METHOD FOR FABRICATING THE SAME simplified abstract (United Microelectronics Corp.)
- 18681214. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
- 18681997. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
- 18728625. SILICON CARBIDE SEMICONDUCTOR DEVICE (Sumitomo Electric Industries, Ltd.)
- 18732351. SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, POWER CONVERSION CIRCUIT, AND VEHICLE simplified abstract (Huawei Digital Power Technologies Co., Ltd.)
- 18734613. SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS OF THE SAME simplified abstract (ROHM CO., LTD.)
- 18744888. THIN-SHEET FINFET DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18758611. SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTURING APPARATUS (ROHM CO., LTD.)
- 18764822. TRANSISTOR DEVICE (Infineon Technologies AG)
- 18782379. WIDE BANDGAP SEMICONDUCTOR DEVICE (FUJI ELECTRIC CO., LTD.)
- 18824073. POWER SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE (SIC) SEMICONDUCTOR BODY (Infineon Technologies AG)
- 18827272. VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE (SIC) SEMICONDUCTOR BODY (Infineon Technologies AG)
- 18883483. SEMICONDUCTOR STORAGE DEVICE (Kioxia Corporation)
- 18885846. SEMICONDUCTOR DEVICE WITH A SILICON CARBIDE PORTION AND A GLASS STRUCTURE AND METHOD OF MANUFACTURING (Infineon Technologies AG)
- 18888811. MULTI-DIE-TO-WAFER HYBRID BONDING (Murata Manufacturing Co., Ltd.)
- 18895465. SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18955290. SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
- 18965021. SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR (KABUSHIKI KAISHA TOSHIBA)
- 18970414. SILICON CARBIDE SEMICONDUCTOR DEVICE (FUJI ELECTRIC CO., LTD.)
2
- 20240014255. METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DEVICE, AND MANUFACTURING METHOD THEREFOR simplified abstract (LG ELECTRONICS INC.)
- 20240014270. INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (FUJI ELECTRIC CO., LTD.)
- 20240014317. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 20240030303. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (ROHM CO., LTD.)
- 20240055487. SILICON CARBIDE SUBSTRATE OR SUBSTRATE PROCESSING METHOD simplified abstract (National Central University)
A
- Applied materials, inc. (20240258375). SILICON CARBIDE TRANSISTOR WITH CHANNEL COUNTER-DOPING AND POCKET-DOPING simplified abstract
- Applied Materials, Inc. patent applications on August 1st, 2024
- Applied Materials, Inc. patent applications on March 6th, 2025
- Audio Technologies patent applications on June 27th, 2024
B
- Blockchain patent applications on February 15th, 2024
- Blockchain patent applications on January 11th, 2024
- Blockchain patent applications on January 25th, 2024
- Blockchain patent applications on March 14th, 2024
- Blockchain patent applications on March 7th, 2024
- Blockchain patent applications on May 16th, 2024
- BYGGE TECHNOLOGIES INC. (20240213345). REALTIME WIRELESS SYNCHRONIZATION OF LIVE EVENT AUDIO STREAM WITH A VIDEO RECORDING simplified abstract
D
- Denso corporation (20240250128). SILICON CARBIDE SUBSTRATE, SILICON CARBIDE WAFER, AND SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract
- Denso corporation (20240250164). DIODE, FIELD EFFECT TRANSISTOR HAVING THE DIODE, AND METHOD FOR MANUFACTURING THE DIODE simplified abstract
- Denso corporation (20240250166). TRENCH GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Denso corporation (20240258425). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Denso corporation (20240321951). FIELD EFFECT TRANSISTOR simplified abstract
- DENSO CORPORATION patent applications on August 1st, 2024
- DENSO CORPORATION patent applications on July 25th, 2024
- DENSO CORPORATION patent applications on September 26th, 2024
I
- Intel corporation (20240194533). INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TESTING simplified abstract
- Intel corporation (20240203978). LAYER TRANSFER CLAMP FOR GALLIUM NITRIDE (GAN) INTEGRATED CIRCUIT TECHNOLOGY simplified abstract
- Intel corporation (20240204048). EPITAXIAL SOURCE OR DRAIN REGION WITH A WRAPPED CONDUCTIVE CONTACT simplified abstract
- Intel corporation (20240213328). DIRECT ELECTROPLATING ON MODIFIED POLYMER-GRAPHENE COMPOSITES simplified abstract
- Intel corporation (20240222435). COUPLING A LAYER OF SILICON CARBIDE WITH AN ADJACENT LAYER simplified abstract
- Intel corporation (20240222469). TRANSISTOR IN A SILICON CARBIDE LAYER AND A TRANSISTOR IN A GALLIUM NITRIDE LAYER IN A CASCODE DESIGN simplified abstract
- Intel corporation (20240222509). SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH simplified abstract
- Intel corporation (20250006667). AMPLIFIER AND MIXER IN A III-V MATERIAL FOR WIDEBAND SUB-TERAHERTZ COMMUNICATION
- Intel Corporation (20250006667). AMPLIFIER AND MIXER IN A III-V MATERIAL FOR WIDEBAND SUB-TERAHERTZ COMMUNICATION
- Intel Corporation patent applications on January 25th, 2024
- Intel Corporation patent applications on January 2nd, 2025
- Intel Corporation patent applications on July 4th, 2024
- Intel Corporation patent applications on June 13th, 2024
- Intel Corporation patent applications on June 20th, 2024
- INTEL CORPORATION patent applications on June 20th, 2024
- Intel Corporation patent applications on June 27th, 2024
- International business machines corporation (20240097006). GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract
- International Business Machines Corporation patent applications on March 21st, 2024
K
- Kabushiki kaisha toshiba (20240096938). SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract
- Kabushiki kaisha toshiba (20240096966). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240097020). SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract
- Kabushiki kaisha toshiba (20240297258). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313083). SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract
- Kabushiki kaisha toshiba (20240313104). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313107). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313108). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240321862). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240321967). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240321968). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240321969). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20250089283). SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Kabushiki kaisha toshiba (20250089322). WAFER AND METHOD FOR MANUFACTURING THE SAME
- Kabushiki kaisha toshiba (20250098231). SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Kabushiki kaisha toshiba (20250098251). SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
- Kabushiki Kaisha Toshiba patent applications on March 13th, 2025
- KABUSHIKI KAISHA TOSHIBA patent applications on March 14th, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on March 20th, 2025
- KABUSHIKI KAISHA TOSHIBA patent applications on March 21st, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on September 19th, 2024
- Kabushiki Kaisha Toshiba patent applications on September 26th, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on September 5th, 2024
- Kioxia corporation (20250098247). SEMICONDUCTOR STORAGE DEVICE