There is currently no text in this page. You can search for this page title in other pages, or search the related logs, but you do not have permission to create this page.
Category:H01L27/06
Jump to navigation
Jump to search
(previous page) (next page)
Subcategories
This category has the following 79 subcategories, out of 79 total.
A
C
D
F
H
J
K
L
M
N
P
R
S
T
V
W
Y
Z
Pages in category "H01L27/06"
The following 200 pages are in this category, out of 396 total.
(previous page) (next page)1
- 17443186. ATOMIC LAYER DEPOSITION BONDING LAYER FOR JOINING TWO SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17460324. MEMORY ARRAY, INTEGRATED CIRCUIT INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17522974. GATE-CUT AND SEPARATION TECHNIQUES FOR ENABLING INDEPENDENT GATE CONTROL OF STACKED TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17543215. COMPLEMENTARY FIELD EFFECT TRANSISTORS HAVING MULTIPLE VOLTAGE THRESHOLDS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17547700. INTEGRATED CIRCUIT DEVICES INCLUDING A METAL RESISTOR AND METHODS OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17590863. METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17781013. METHOD FOR FORMING CONDUCTIVE VIA, CONDUCTIVE VIA AND PASSIVE DEVICE simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
- 17806292. STACKED FIELD EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17818048. MONOLITHIC THREE-DIMENSIONAL (3D) COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS AND METHOD OF MANUFACTURE simplified abstract (QUALCOMM Incorporated)
- 17838384. THREE-DIMENSIONAL SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17846423. ENHANCED POWER AND SIGNAL FOR STACKED-FETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17848605. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17852031. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17895286. Conductive Via With Improved Gap Filling Performance simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17936990. CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION simplified abstract (Intel Corporation)
- 17946002. DIODES IN NANOSHEET TECHNOLOGY simplified abstract (International Business Machines Corporation)
- 17957931. BURIED TRENCH CAPACITOR simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 17957983. THIN FILM RESISTOR MISMATCH IMPROVEMENT USING A SELF-ALIGNED DOUBLE PATTERN (SADP) TECHNIQUE simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 17977250. SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS) simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 17984417. INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18052726. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18056181. INTEGRATED CIRCUIT DEVICES INCLUDING METALLIC SOURCE/DRAIN REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18065060. BACKSIDE DIRECT CONTACT FORMATION simplified abstract (International Business Machines Corporation)
- 18069213. DECOUPLING CAPACITOR INSIDE BACKSIDE POWER DISTRIBUTION NETWORK POWERVIA TRENCH simplified abstract (International Business Machines Corporation)
- 18078245. ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES simplified abstract (International Business Machines Corporation)
- 18094484. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18145840. DECOUPLING MIM CAPACITOR simplified abstract (International Business Machines Corporation)
- 18148754. METHOD AND STRUCTURE FOR REDUCED SUBSTRATE LOSS FOR GAN DEVICES simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18148810. RESISTOR WITH DOPED REGIONS AND SEMICONDUCTOR DEVICES HAVING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18164426. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18165639. NANOSHEET DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18178816. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18178816. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18179922. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18195150. 3D-STACKED TRANSISTOR STRUCTURE WITH BARRIER LAYER BETWEEN UPPER GATE STRUCTURE AND LOWER GATE STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 18211316. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18216442. SERIAL INTERFACE PROVIDING ELECTROSTATIC DISCHARGE PROTECTION (Intel Corporation)
- 18227113. THREE-DIMENSIONAL SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING INTER-DIE INTERFACE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18233693. 3DSFET DEVICE INCLUDING RESTRUCTURED LOWER SOURCE/DRAIN REGION HAVING INCREASED CONTACT AREA simplified abstract (Samsung Electronics Co., Ltd.)
- 18309172. INTEGRATED CIRCUIT PROTECTION DEVICE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18344564. TRANSFORMER DEVICE AND SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18363045. CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18370402. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (UNITED MICROELECTRONICS CORP.)
- 18371328. Semiconductor Devices Including Resistor Structures simplified abstract (Samsung Electronics Co., Ltd.)
- 18381639. STRUCTURE WITH CAPACITOR AND FIN TRANSISTOR AND FABRICATING METHOD OF THE SAME (UNITED MICROELECTRONICS CORP.)
- 18392468. ARRANGEMENT METHOD OF SIGNAL LINES AND INTEGRATED CIRCUIT TO WHICH THE ARRANGEMENT METHOD IS APPLIED simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18400745. FRONT END OF LINE INTERCONNECT STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 18401746. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18405216. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18407040. CAPACITOR AND DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18418368. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18421356. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
- 18421356. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18432061. ADHESIVE AND THERMAL INTERFACE MATERIAL ON A PLURALITY OF DIES COVERED BY A LID simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18432084. SEMICONDUCTOR DEVICE simplified abstract (Rohm Co., Ltd.)
- 18432351. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18435938. SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18437961. FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING PRE-SPACER DEPOSITION CUT GATES simplified abstract (Intel Corporation)
- 18442104. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18443253. RC-IGBT simplified abstract (Mitsubishi Electric Corporation)
- 18444849. SEMICONDUCTOR DEVICE HAVING MERGED EPITAXIAL FEATURES WITH ARC-LIKE BOTTOM SURFACE AND METHOD OF MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18446430. SEMICONDUCTOR DEVICE (United Microelectronics Corp.)
- 18447580. MULTI-SILICIDE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18447739. THREE DIMENSIONAL INTEGRATED CIRCUIT WITH MONOLITHIC INTER-TIER VIAS (MIV) simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18447857. SEMICONDUCTOR DEVICE AND METHOD OF OPERATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18447904. SENSE AMPLIFIER FOR COUPLING EFFECT REDUCTION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18448155. INTEGRATED CIRCUIT LAYOUT METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18463138. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18463138. SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18468556. Reduction of Edge Transistor Leakage on N-Type EDMOS and LDMOS Devices (Murata Manufacturing Co., Ltd.)
- 18469489. GATE-TIE-DOWN IN BACKSIDE POWER ARCHITECTURE USING CONTACT JUMPER AND BACKSIDE CONTACT (QUALCOMM Incorporated)
- 18470646. BACKSIDE RESISTOR CONNECTED TO BACKSIDE BACK END OF LINE NETWORK (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18475441. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18480152. SEMICONDUCTOR DEVICE, SEMICONDUCTOR CIRCUIT, AND METHOD OF CONTROLLING SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18487625. VERTICAL CHANNEL THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME simplified abstract (ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE)
- 18488710. SEMICONDUCTOR MODULE simplified abstract (Robert Bosch GmbH)
- 18489028. SEMICONDUCTOR MODULE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18502225. SEMICONDUCTOR STRUCTURE OF SCHOTTKY DEVICES simplified abstract (MEDIATEK Inc.)
- 18510231. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18510231. SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18513103. METHOD AND CIRCUIT TO ISOLATE BODY CAPACITANCE IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18513624. SEMICONDUCTOR DEVICE AND FABRICATION METHOD simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18515524. ELECTROSTATIC DISCHARGE PROTECTION DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18516039. 3DIC WITH GAP-FILL STRUCTURES AND THE METHOD OF MANUFACTURING THE SAME (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18516311. POLYSILICON RESISTOR STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18521404. METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18534217. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18542240. TRANSISTOR CONFIGURATIONS FOR MULTI-DECK MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18558079. Three-Dimensional Memory, Chip Package Structure, and Electronic Device simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18582871. SEMICONDUCTOR DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18583693. HETEROJUNCTION BIPOLAR TRANSISTOR, SEMICONDUCTOR DEVICE, AND COMMUNICATION MODULE simplified abstract (Murata Manufacturing Co., Ltd.)
- 18586112. 3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL STRUCTURES, SOURCE/DRAIN REGIONS, AND GATE STRUCTURES AT DIFFERENT LEVELS (SAMSUNG ELECTRONICS CO., LTD.)
- 18589752. SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)
- 18589766. SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)
- 18590793. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18594210. RESISTOR simplified abstract (STMicroelectronics International N.V.)
- 18594816. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18596254. Power and Temperature Management for Functional Blocks Implemented by a 3D Stacked Integrated Circuit simplified abstract (Micron Technology, Inc.)
- 18602050. NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR MODULE simplified abstract (ROHM CO., LTD.)
- 18605045. SEMICONDUCTOR DEVICE simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
- 18605645. SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD) PATHS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18609875. METHOD FOR FORMING A CRYSTALLINE PROTECTIVE POLYSILICON LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18614266. RESISTOR-CAPACITOR COMPONENT FOR HIGH-VOLTAGE APPLICATIONS AND METHOD FOR MANUFACTURING THEREOF simplified abstract (Murata Manufacturing Co., Ltd.)
- 18614735. HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18615255. SILICIDE-LAYER-COUPLED DOPED PORTION OF ACTIVE REGION AND METHOD OF FABRICATING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18624453. TRANSIENT VOLTAGE ABSORPTION ELEMENT simplified abstract (Murata Manufacturing Co., Ltd.)
- 18637552. 3D Stackable Memory and Methods of Manufacture simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18638997. SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18645658. Liquid Crystal Display Device simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18646397. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18649460. SEMICONDUCTOR DEVICE, RELATED CIRCUIT, CHIP, ELECTRONIC DEVICE, AND PREPARATION METHOD simplified abstract (Huawei Digital Power Technologies Co., Ltd.)
- 18649986. SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT simplified abstract (Micron Technology, Inc.)
- 18653978. MEMORY CELL AND SEMICONDUCTOR MEMORY DEVICE WITH THE SAME simplified abstract (SK hynix Inc.)
- 18664387. SEMICONDUCTOR INTEGRATED CIRCUIT simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18665569. SEMICONDUCTOR DEVICE INCLUDING AN IGBT WITH REDUCED VARIATION IN THRESHOLD VOLTAGE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18669378. SEMICONDUCTOR DEVICE FOR A LOW-LOSS ANTENNA SWITCH simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18671908. ELECTRONIC APPARATUS AND MANUFACTURING METHOD THEREOF simplified abstract (InnoLux Corporation)
- 18675249. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18677345. LAYOUT DESIGN METHODOLOGY FOR STACKED DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18734212. METHOD OF MAKING AMPHI-FET STRUCTURE AND METHOD OF DESIGNING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18734669. THREE-DIMENSIONAL DEVICE STRUCTURE INCLUDING SEAL RING CONNECTION CIRCUIT simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 18735002. SEMICONDUCTOR STORAGE DEVICE COMPRISING STAIRCASE PORTION simplified abstract (Kioxia Corporation)
- 18738100. SEMICONDUCTOR DEVICES HAVING CAPACITOR STRUCTURES AND SEMICONDUCTOR INTEGRATED CIRCUITS HAVING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18748008. NOVEL THIN FILM RESISTOR simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18749503. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18754706. BACKSIDE CAPACITOR TECHNIQUES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18757744. SEMICONDUCTOR DEVICE HAVING CAPACITOR AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18761979. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE (Mitsubishi Electric Corporation)
- 18768111. MEMORY DEVICE AND SEMICONDUCTOR DEVICE (Semiconductor Energy Laboratory Co., Ltd.)
- 18783807. 3DIC WITH GAP-FILL STRUCTURES AND THE METHOD OF MANUFACTURING THE SAME (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18808934. SEMICONDUCTOR DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18815521. 3D STACKED INTEGRATED CIRCUITS HAVING FAILURE MANAGEMENT (Micron Technology, Inc.)
- 18818617. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE (FUJI ELECTRIC CO., LTD.)
- 18819313. PROTECTION STRUCTURE FOR AN ENHANCEMENT-MODE FET OF A CIRCUIT AND CORRESPONDING METHOD (NXP USA, Inc.)
- 18823149. SEMICONDUCTOR DEVICE, WIRELESS COMMUNICATION DEVICE, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE (Fujitsu Limited)
- 18887445. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME (Samsung Electronics Co., Ltd.)
- 18895440. SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18897319. SEMICONDUCTOR DEVICE, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE (Semiconductor Energy Laboratory Co., Ltd.)
- 18944378. SEMICONDUCTOR DEVICE (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18946956. SEMICONDUCTOR PACKAGE (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18947497. REPLACEMENT GATE FORMATION IN MEMORY (Micron Technology, Inc.)
- 18957566. SEMICONDUCTOR STRUCTURE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18958291. SEMICONDUCTOR DEVICES COMPRISING FAILURE DETECTORS FOR DETECTING FAILURE OF BIPOLAR JUNCTION TRANSISTORS AND METHODS FOR DETECTING FAILURE OF THE BIPOLAR JUNCTION TRANSISTORS (Samsung Electronics Co., Ltd.)
- 18959684. SEMICONDUCTOR PACKAGES AND METHOD OF FORMING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
B
- Blockchain patent applications on January 18th, 2024
- Blockchain patent applications on March 14th, 2024
- Blockchain patent applications on March 28th, 2024
- Boe technology group co., ltd. (20240162138). METHOD FOR FORMING CONDUCTIVE VIA, CONDUCTIVE VIA AND PASSIVE DEVICE simplified abstract
- BOE TECHNOLOGY GROUP CO., LTD. patent applications on May 16th, 2024
D
H
I
- Innolux corporation (20240297168). ELECTRONIC APPARATUS simplified abstract
- InnoLux Corporation patent applications on September 5th, 2024
- Intel corporation (20240113101). CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION simplified abstract
- Intel corporation (20240178226). FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING PRE-SPACER DEPOSITION CUT GATES simplified abstract
- Intel corporation (20240276698). FIN CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240332403). STACKED TRANSISTORS simplified abstract
- Intel corporation (20250006726). SERIAL INTERFACE PROVIDING ELECTROSTATIC DISCHARGE PROTECTION
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on August 15th, 2024
- Intel Corporation patent applications on January 2nd, 2025
- Intel Corporation patent applications on January 30th, 2025
- Intel Corporation patent applications on May 30th, 2024
- Intel Corporation patent applications on October 3rd, 2024
- International business machines corporation (20240096949). DIODES IN NANOSHEET TECHNOLOGY simplified abstract
- International business machines corporation (20240186317). NANOSHEET METAL-INSULATOR-METAL CAPACITOR simplified abstract
- International business machines corporation (20240194528). BACKSIDE DIRECT CONTACT FORMATION simplified abstract
- International business machines corporation (20240194670). ASYMMETRICALLY BONDED INTEGRATED CIRCUIT DEVICES simplified abstract
- International business machines corporation (20240203982). DECOUPLING CAPACITOR INSIDE BACKSIDE POWER DISTRIBUTION NETWORK POWERVIA TRENCH simplified abstract
- International business machines corporation (20240213141). DECOUPLING MIM CAPACITOR simplified abstract
- International business machines corporation (20250098288). BACKSIDE RESISTOR CONNECTED TO BACKSIDE BACK END OF LINE NETWORK
- International Business Machines Corporation patent applications on February 29th, 2024
- International Business Machines Corporation patent applications on June 13th, 2024
- International Business Machines Corporation patent applications on June 20th, 2024
- International Business Machines Corporation patent applications on June 27th, 2024
- International Business Machines Corporation patent applications on June 6th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 20th, 2025
- International Business Machines Corporation patent applications on March 21st, 2024
K
- Kabushiki kaisha toshiba (20240096876). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240321869). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240321972). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20250098263). SEMICONDUCTOR DEVICE
- Kabushiki kaisha toshiba (20250098289). SEMICONDUCTOR DEVICE
- Kabushiki kaisha toshiba (20250107125). SEMICONDUCTOR DEVICE
- KABUSHIKI KAISHA TOSHIBA patent applications on March 14th, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on March 20th, 2025
- KABUSHIKI KAISHA TOSHIBA patent applications on March 21st, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on March 27th, 2025
- Kabushiki Kaisha Toshiba patent applications on September 26th, 2024
- Kioxia corporation (20240096877). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Kioxia corporation (20240324251). SEMICONDUCTOR STORAGE DEVICE COMPRISING STAIRCASE PORTION simplified abstract
- Kioxia Corporation patent applications on March 21st, 2024
- Kioxia Corporation patent applications on September 26th, 2024
M
- Micron technology, inc. (20240194671). TRANSISTOR CONFIGURATIONS FOR MULTI-DECK MEMORY DEVICES simplified abstract
- Micron technology, inc. (20240282620). SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT simplified abstract
- Micron technology, inc. (20240411090). METHOD OF FORMING PHOTONICS STRUCTURES
- Micron technology, inc. (20240421823). 3D STACKED INTEGRATED CIRCUITS HAVING FAILURE MANAGEMENT
