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Category:H01L21/762
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Pages in category "H01L21/762"
The following 200 pages are in this category, out of 492 total.
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- 17384092. Dielectric Fin Structures With Varying Height simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17534629. Reliability Macros for Contact Over Active Gate Layout Designs simplified abstract (International Business Machines Corporation)
- 17668452. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17679465. NANOSHEET TRANSISTOR DEVICES AND RELATED FABRICATION METHODS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17689644. Semiconductor Devices with Uniform Gate Regions simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17691293. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17744061. Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17808186. SEMICONDUCTOR DEVICE WITH POWER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17815915. ISOLATION REGIONS WITHIN A MEMORY DIE simplified abstract (Micron Technology, Inc.)
- 17822173. STACKED FET SUBSTRATE CONTACT simplified abstract (International Business Machines Corporation)
- 17822454. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17823508. EMBEDDED SOI STRUCTURE FOR LOW LEAKAGE MOS CAPACITOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17836463. METHOD FOR FILLING TRENCH IN SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837048. METHOD OF FABRICATING VOID-FREE CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 17838303. FIN FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17859284. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17863317. SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE simplified abstract (Micron Technology, Inc.)
- 17886753. SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17897201. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17900804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17930739. GAA DEVICE WITH THE SUBSTRATE INCLUDING EMBEDDED INSULATING STRUCTURE BETWEEN BSPDN AND CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17933187. SELF-ALIGNED BACKSIDE CONTACT MODULE FOR 3DIC APPLICATION simplified abstract (QUALCOMM Incorporated)
- 17937212. FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL simplified abstract (Intel Corporation)
- 17937431. POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS simplified abstract (International Business Machines Corporation)
- 17940195. BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION simplified abstract (Intel Corporation)
- 17957821. GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract (Intel Corporation)
- 17958040. SINGLE DIE REINFORCED GALVANIC ISOLATION DEVICE simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 17977250. SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS) simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 17986119. Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18067168. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18079817. Selective Implantation into STI of ETSOI Device simplified abstract (Applied Materials, Inc.)
- 18105620. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18105659. SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18123402. DIELECTRIC BRIDGE FOR HIGH BANDWIDTH INTER-DIE COMMUNICATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18133977. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18150474. Transistor Gate Structures and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151412. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151792. FILM MODIFICATION FOR GATE CUT PROCESS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152477. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18153335. SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18155912. SEMICONDUCTOR DEVICE INCLUDING INSULATING STRUCTURE SURROUNDING THROUGH VIA AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18156024. FORMING WRAP AROUND CONTACT WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 18157395. STRUCTURE OF ISOLATION FEATURE OF SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18162892. SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18166521. INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL FIELD-EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18173948. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18186778. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18199504. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18215741. INTEGRATED CIRCUIT STRUCTURES WITH REMOVED SUB-FIN (Intel Corporation)
- 18219107. SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND SHALLOW TRENCH ISOLATION AND FABRICATING METHOD OF THE SAME (UNITED MICROELECTRONICS CORP.)
- 18227991. ISOLATION STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (United Microelectronics Corp.)
- 18261507. SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE MANUFACTURING METHOD simplified abstract (Tokyo Electron Limited)
- 18303205. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18306716. Isolation Regions For Isolating Transistors and the Methods Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18310369. SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18312811. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18320423. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18320423. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18336063. SEMICONDUCTOR BACKSIDE ISOLATION FEATURE FOR MERGED EPITAXY (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18342821. NANOSHEET HEIGHT CONTROL WITH DENSE OXIDE SHALLOW TRENCH ISOLATION (International Business Machines Corporation)
- 18346507. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Winbond Electronics Corp.)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18368014. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18369148. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE (NANYA TECHNOLOGY CORPORATION)
- 18381639. STRUCTURE WITH CAPACITOR AND FIN TRANSISTOR AND FABRICATING METHOD OF THE SAME (UNITED MICROELECTRONICS CORP.)
- 18383940. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN-TYPE ACTIVE REGION simplified abstract (Samsung Electronics Co., Ltd.)
- 18395192. TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract (Intel Corporation)
- 18401955. Shallow Trench Isolation Forming Method and Structures Resulting Therefrom simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18402187. FORMING ISOLATION REGIONS WITH LOW PARASITIC CAPACITANCE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18403495. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18404178. DEVICE OVER PHOTODETECTOR PIXEL SENSOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18416508. TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18423616. INTEGRATED CHIP AND METHOD OF FORMING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18425797. SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18432377. REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18432694. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18433867. SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18434553. DEVICE OF DIELECTRIC LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18435231. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18435609. DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18436731. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Renesas Electronics Corporation)
- 18437522. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18438758. FINFET Devices with Backside Power Rail and Backside Self-Aligned Via simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18441571. IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18442381. HIGH VOLTAGE DEVICE WITH BOOSTED BREAKDOWN VOLTAGE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18444356. SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18463436. LATERAL ETCHING PROCESS TO REMOVE METAL GATE FOOT STRUCTURES (Intel Corporation)
- 18464993. METHOD FOR FILLING GAP (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18470655. BACKSIDE FUSE CONNECTED TO BACKSIDE BACK END OF THE LINE NETWORK (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18487141. MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE (UNITED MICROELECTRONICS CORP.)
- 18488381. SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18488718. LARGE-AREA III-V SEMICONDUCTOR LAYER TRANSFERRING METHOD simplified abstract (ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE)
- 18499117. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18516595. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP simplified abstract (Intel Corporation)
- 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518642. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18520346. REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520872. DEVICE LAYER INTERCONNECTS simplified abstract (Intel Corporation)
- 18520894. HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING A DEEP TRENCH INSULATION AND MANUFACTURING PROCESS simplified abstract (STMICROELECTRONICS S.r.l.)
- 18520917. SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521584. FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522265. METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526062. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526290. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526317. FinFET Device and Method of Forming Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18532619. Trench FET Device and Method of Manufacturing Trench FET Device simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18536026. APPARATUSES INCLUDING SHALLOW TRENCH ISOLATION AND METHODS FOR FORMING SAME simplified abstract (Micron Technology, Inc.)
- 18543769. REDUCED ESR IN TRENCH CAPACITOR simplified abstract (Texas Instruments Incorporated)
- 18543934. Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18581561. REDUCED SEMICONDUCTOR WAFER BOW AND WARPAGE simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18584282. SOURCE/DRAIN EPITAXIAL LAYER PROFILE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18586425. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF SEPARATING SUBSTRATE simplified abstract (KIOXIA CORPORATION)
- 18590747. FILLING OPENINGS BY COMBINING NON-FLOWABLE AND FLOWABLE PROCESSES simplified abstract (Intel Corporation)
- 18591438. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KIOXIA CORPORATION)
- 18591687. SEMICONDUCTOR DEVICE INCLUDING GATE SEPARATION REGION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18591923. GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18592124. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KIOXIA CORPORATION)
- 18592697. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18594735. INTEGRATED CIRCUIT STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18595696. SEMICONDUCTOR DEVICES HAVING VARIOUSLY-SHAPED SOURCE/DRAIN PATTERNS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18596655. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR SEPARATING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Kioxia Corporation)
- 18597861. METHOD FOR FORMING SOI SUBSTRATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18603270. SEMICONDUCTOR DIE WITH A VERTICAL DEVICE simplified abstract (Infineon Technologies Austria AG)
- 18609639. FINFET CIRCUIT DEVICES WITH WELL ISOLATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18614985. FIN ISOLATION STRUCTURE FOR FINFET AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18622018. ISOLATION STRUCTURES FOR TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18623390. ISOLATION STRUCTURES IN MULTI-GATE SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18624147. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18625377. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18631884. METHOD OF FORMING PATTERNS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18636384. Semiconductor Fin Cutting Process and Structures Formed Thereby simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18663364. Methods of Forming Material Within Openings Extending into a Semiconductor Construction, and Semiconductor Constructions Having Fluorocarbon Material simplified abstract (Micron Technology, Inc.)
- 18667509. STRUCTURE FOR FRINGING CAPACITANCE CONTROL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18668333. BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18668911. GATE ISOLATION FOR MULTIGATE DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18670123. SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18670140. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18673571. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18736206. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME (ROHM CO., LTD.)
- 18736384. SEMICONDUCTOR DEVICE HAVING WAFER-TO-WAFER BONDING STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18745323. SEMICONDUCTOR DEVICE ACTIVE REGION PROFILE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18750737. Source/Drain Feature to Contact Interfaces simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18753240. DIELECTRIC SPACER TO PREVENT CONTACTING SHORTING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18753406. METHOD OF FABRICATING A FINFET DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18754653. FABRICATION METHOD OF METAL-FREE SOI WAFER simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18826591. METHOD FOR MANUFACTURING VIBRATION POWER GENERATION DEVICE AND VIBRATION DEVICE (SEIKO EPSON CORPORATION)
- 18885734. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (United Microelectronics Corp.)
- 18886036. METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE USING NITROGEN-CONTAINING PATTERN (NANYA TECHNOLOGY CORPORATION)
- 18888169. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (United Microelectronics Corp.)
- 18891861. Low Leakage FET (Murata Manufacturing Co., Ltd.)
- 18938789. SEMICONDUCTOR DEVICE AND METHODS OF FORMATION (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18940382. HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 18946403. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME (CXMT CORPORATION)
- 18956601. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18961425. MEMORY STRUCTURE AND METHOD OF FORMING THEREOF (NANYA TECHNOLOGY CORPORATION)
- 18966227. ETCH METHOD FOR OPENING A SOURCE LINE IN FLASH MEMORY (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18967679. SEMICONDUCTOR STRUCTURES AND METHOD FOR MANUFACTURING THE SAME (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18968786. INCREASE THE VOLUME OF EPITAXY REGIONS (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18968954. DAM LAMINATE ISOLATION SUBSTRATE (Texas Instruments Incorporated)
- 18970265. PLUGS FOR INTERCONNECT LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 18971358. SEMICONDUCTOR STRUCTURE (MediaTek Inc.)
2
- 20240010491. METHOD FOR MANUFACTURING A STRUCTURE COMPRISING A PLURALITY OF MEMBRANES OVERLOOKING CAVITIES simplified abstract (Soitec)
- 20240014101. MICROFLUIDIC CHANNELS SEALED WITH DIRECTIONALLY-GROWN PLUGS simplified abstract (GlobalFoundries U.S. Inc.)
- 20240021601. BCD DEVICE LAYOUT AREA DEFINED BY A DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 20240040778. MEMORY STRUCTURE, SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)
- 20240047579. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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- Blockchain patent applications on February 1st, 2024
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- Intel corporation (20240105520). TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240113105). FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL simplified abstract
- Intel corporation (20240113107). GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract
- Intel corporation (20240136277). TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract
- Intel corporation (20240162332). TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240178071). DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240186403). DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240249972). FILLING OPENINGS BY COMBINING NON-FLOWABLE AND FLOWABLE PROCESSES simplified abstract
- Intel corporation (20240332399). GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240355903). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES ABOVE INSULATOR SUBSTRATES simplified abstract
- Intel corporation (20250006547). INTEGRATED CIRCUIT STRUCTURES WITH REMOVED SUB-FIN
- Intel corporation (20250022939). CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250072078). HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250087530). LATERAL ETCHING PROCESS TO REMOVE METAL GATE FOOT STRUCTURES
- Intel corporation (20250098258). PLUGS FOR INTERCONNECT LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel Corporation patent applications on April 25th, 2024
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- Intel Corporation patent applications on January 2nd, 2025