There is currently no text in this page. You can search for this page title in other pages, or search the related logs, but you do not have permission to create this page.
Category:H01L21/306
Jump to navigation
Jump to search
(previous page) (next page)
Subcategories
This category has the following 46 subcategories, out of 46 total.
A
B
C
H
I
J
K
M
P
S
T
W
Y
Z
Pages in category "H01L21/306"
The following 200 pages are in this category, out of 288 total.
(previous page) (next page)1
- 17460049. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17460709. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17532423. PROCESSOR DIE ALIGNMENT GUIDES simplified abstract (International Business Machines Corporation)
- 17590717. METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND METHOD OF SEPARATING SUBSTRATE simplified abstract (Samsung Electronics Co., Ltd.)
- 17590863. METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17655321. Integration of Multiple Transistors Having Fin and Mesa Structures simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17677929. DEVICE WITH ALTERNATE COMPLEMENTARY CHANNELS AND FABRICATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17689644. Semiconductor Devices with Uniform Gate Regions simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17704676. SLURRY SUPPLY DEVICE, SUBSTRATE POLISHING APPARATUS, AND SUBSTRATE POLISHING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17739783. Semiconductor Device and Method of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837048. METHOD OF FABRICATING VOID-FREE CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 17897350. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17902111. MULTI BRIDGE CHANNEL FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17907790. AMORPHOUS SILICON THIN-FILM TRANSISTOR, METHOD FOR PREPARING SAME, AND DISPLAY PANEL simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
- 17933078. NON-PLANAR METAL-INSULATOR-METAL STRUCTURE simplified abstract (International Business Machines Corporation)
- 17946609. METHODS TO PREVENT SURFACE CHARGE INDUCED CD-DEPENDENT ETCHING OF MATERIAL FORMED WITHIN FEATURES ON A PATTERNED SUBSTRATE simplified abstract (TOKYO ELECTRON LIMITED)
- 17961601. SUBSTRATE PROCESSING APPARATUS AND CONTROL METHOD FOR A SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 17963281. SKIP VIA WITH LATERAL LINE CONNECTION simplified abstract (International Business Machines Corporation)
- 17963591. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17986119. Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18059093. SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18091026. ENABLING COPPER RECESS FLATTENING THROUGH BLOCKED COPPER ETCHING PROCESSES simplified abstract (Intel Corporation)
- 18094839. METHODS OF FORMING PHOTONIC DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18147457. ARCHITECTURES AND METHODS FOR METAL LAMINATION ON A GLASS LAYER simplified abstract (Intel Corporation)
- 18150256. INTEGRATED CIRCUIT PACKAGES AND METHODS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18150620. SEMICONDUCTOR STRUCTURE HAVING SELF-ALIGNED INSULATING FEATURE AND METHODS FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18155296. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18171765. SEMICONDUCTOR STRUCTURE WITH DEVICE INCLUDING AT LEAST ONE IN-WELL POROUS REGION simplified abstract (GlobalFoundries U.S. Inc.)
- 18184968. INTEGRATED CIRCUIT PACKAGES AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18189850. TUNABLE W-SHAPED PROFILE FOR STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18210819. CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD OF CONTROLLING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18278421. SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
- 18318854. SEMICONDUCTOR DEVICE AND METHODS OF FORMING PATTERNS simplified abstract (Samsung Electronics Co., Ltd.)
- 18334955. RETAINING RING FOR CHEMICAL-MECHANICAL POLISHING (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18336377. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18354055. ETCHANT COMPOSITION FOR ETCHING SILICON AND SILICON GERMANIUM, AND PREPARATION METHOD OF PATTERN USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18370536. IN-SITU SIDEWALL PASSIVATION TOWARD THE BOTTOM OF HIGH ASPECT RATIO FEATURES (Applied Materials, Inc.)
- 18389625. INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TESTING simplified abstract (Intel Corporation)
- 18411667. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18418868. CHEMICAL MECHANICAL POLISHING APPARATUS AND CHEMICAL MECHANICAL POLISHING METHOD simplified abstract (Samsung Electronics Co., Ltd.)
- 18433217. INTEGRATED CIRCUIT DEVICE WITH SOURCE/DRAIN BARRIER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18468966. ETCHING CONTROL SYSTEM AND ETCHING CONTROL METHOD simplified abstract (TOKYO ELECTRON LIMITED)
- 18469111. SEMICONDUCTOR PACKAGES AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18475898. ULTRAPURE WATER PRODUCTION SYSTEM, SEMICONDUCTOR PROCESSING SYSTEM INCLUDING THE SAME, AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18487141. MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE (UNITED MICROELECTRONICS CORP.)
- 18488729. VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER simplified abstract (Robert Bosch GmbH)
- 18491470. METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES BY ETCHING ACTIVE FINS USING ETCHING MASKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18508239. SEMICONDUCTOR SUBSTRATE WITH A SACRIFICIAL ANNULUS simplified abstract (MICRON TECHNOLOGY, INC.)
- 18510693. APPARATUS FOR DETECTING END POINT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18513404. HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18517275. FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522461. METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18569943. POLISHING LIQUID, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD simplified abstract (Resonac Corporation)
- 18581096. SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18584028. FORMING A CAVITY WITH A WET ETCH FOR BACKSIDE CONTACT FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18586372. SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18586925. SURFACE MODIFICATION LAYER FOR CONDUCTIVE FEATURE FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18587477. Methods for Forming Stacked Layers and Devices Formed Thereof simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18587506. METHOD FOR FORMING DIFFERENT TYPES OF DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18590179. METHODS OF FORMING SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18596115. MEMORY DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18602237. ETCHING METHOD (KABUSHIKI KAISHA TOSHIBA)
- 18603578. TREATMENT LIQUID FOR MANUFACTURING SEMICONDUCTOR AND METHOD OF TREATING OBJECT TO BE TREATED simplified abstract (FUJIFILM CORPORATION)
- 18604167. WET ANISOTROPIC ETCHING OF SILICON simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18608043. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18608163. METHOD OF PROCESSING A SUBSTRATE (SAMSUNG ELECTRONICS CO., LTD.)
- 18608191. Pitch Reduction Technology Using Alternating Spacer Depositions During the Formation of a Semiconductor Device and Systems Including Same simplified abstract (Lodestar Licensing Group LLC)
- 18608294. SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH simplified abstract (Intel Corporation)
- 18608940. HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATING METHOD OF THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18610375. CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18618044. Selective Deposition of Barrier Layer simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18618815. SELF-ALIGNED BARRIER FOR METAL VIAS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18623285. Gate-All-Around Device with Protective Dielectric Layer and Method of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18623697. SELF-ALIGNED BACKSIDE SOURCE CONTACT STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18624147. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18625348. GATE SPACING IN INTEGRATED CIRCUIT STRUCTURES simplified abstract (Intel Corporation)
- 18638120. Semiconductor Devices Having Funnel-Shaped Gate Structures simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18638436. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18644874. STATIC RANDOM-ACCESS MEMORY (SRAM) BIT CELL WITH CHANNEL DEPOPULATION simplified abstract (Intel Corporation)
- 18653815. GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME simplified abstract (Intel Corporation)
- 18659315. ADHESIVE COMPOSITION FOR INFRARED PEELING, LAMINATE, METHOD FOR PRODUCING LAMINATE, AND PEELING METHOD simplified abstract (NISSAN CHEMICAL CORPORATION)
- 18660559. DISPLAY DEVICE, METHOD OF MANUFACTURING WINDOW, AND METHOD OF MANUFACTURING DISPLAY DEVICE simplified abstract (Samsung Display Co., LTD.)
- 18667981. METHODS OF FORMING PHOTONIC DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18670123. SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18670223. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18701058. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18749534. METHOD OF FORMING SEMICONDUCTOR DEVICE USING WET ETCHING CHEMISTRY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18755306. METHODS AND APPARATUS TO REDUCE STRESS IN INTEGRATED CIRCUIT PACKAGES simplified abstract (Intel Corporation)
- 18806023. Advanced Substrates for Large, High Performance Power Packages (Google LLC)
- 18965045. SEMICONDUCTOR METHOD AND DEVICE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18968954. DAM LAMINATE ISOLATION SUBSTRATE (Texas Instruments Incorporated)
- 18969589. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)
- 18969589. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18972346. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING REMOVED SUBSTRATE (Intel Corporation)
- 18976642. Integrated Assemblies and Methods of Forming Integrated Assemblies (Micron Technology, Inc.)
2
A
- Applied materials, inc. (20240266175). CARBON AND BORON IMPLANTATION FOR BACKSIDE CHEMICAL MECHANICAL PLANARIZATION CONTROL simplified abstract
- Applied materials, inc. (20250095984). IN-SITU SIDEWALL PASSIVATION TOWARD THE BOTTOM OF HIGH ASPECT RATIO FEATURES
- Applied Materials, Inc. patent applications on August 8th, 2024
- Applied Materials, Inc. patent applications on January 30th, 2025
- Applied Materials, Inc. patent applications on March 20th, 2025
- Applied Materials, Inc. patent applications on March 6th, 2025
B
G
I
- Intel corporation (20240105635). SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS simplified abstract
- Intel corporation (20240186378). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB SOURCE OR DRAIN STRUCTURES simplified abstract
- Intel corporation (20240194533). INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TESTING simplified abstract
- Intel corporation (20240204091). LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR GROUP III-NITRIDE (III-N) DEVICES simplified abstract
- Intel corporation (20240222130). ENABLING COPPER RECESS FLATTENING THROUGH BLOCKED COPPER ETCHING PROCESSES simplified abstract
- Intel corporation (20240222248). ARCHITECTURES AND METHODS FOR METAL LAMINATION ON A GLASS LAYER simplified abstract
- Intel corporation (20240222509). SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING WIDTH simplified abstract
- Intel corporation (20240249946). GATE SPACING IN INTEGRATED CIRCUIT STRUCTURES simplified abstract
- Intel corporation (20240282633). GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME simplified abstract
- Intel corporation (20240284652). STATIC RANDOM-ACCESS MEMORY (SRAM) BIT CELL WITH CHANNEL DEPOPULATION simplified abstract
- Intel corporation (20240347590). METHODS AND APPARATUS TO REDUCE STRESS IN INTEGRATED CIRCUIT PACKAGES simplified abstract
- Intel corporation (20250107181). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING REMOVED SUBSTRATE
- Intel Corporation patent applications on August 22nd, 2024
- Intel Corporation patent applications on July 25th, 2024
- Intel Corporation patent applications on July 4th, 2024
- Intel Corporation patent applications on June 13th, 2024
- Intel Corporation patent applications on June 20th, 2024
- INTEL CORPORATION patent applications on June 20th, 2024
- Intel Corporation patent applications on June 6th, 2024
- Intel Corporation patent applications on March 27th, 2025
- Intel Corporation patent applications on March 28th, 2024
- Intel Corporation patent applications on October 17th, 2024
- International business machines corporation (20240096793). NON-PLANAR METAL-INSULATOR-METAL STRUCTURE simplified abstract
- International business machines corporation (20240120271). SKIP VIA WITH LATERAL LINE CONNECTION simplified abstract
- International business machines corporation (20240178156). SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS simplified abstract
- International Business Machines Corporation patent applications on April 11th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on February 8th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on May 30th, 2024
K
- Kabushiki kaisha toshiba (20250098211). METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Kabushiki kaisha toshiba (20250105014). ETCHING METHOD
- KABUSHIKI KAISHA TOSHIBA patent applications on March 20th, 2025
- KABUSHIKI KAISHA TOSHIBA patent applications on March 27th, 2025
- Kioxia corporation (20240312801). SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Kioxia Corporation patent applications on September 19th, 2024
M
- Micron technology, inc. (20240128158). TSV-BUMP STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF FORMING THE SAME simplified abstract
- Micron technology, inc. (20240222184). SEMICONDUCTOR SUBSTRATE WITH A SACRIFICIAL ANNULUS simplified abstract
- Micron technology, inc. (20250107094). Integrated Assemblies and Methods of Forming Integrated Assemblies
- Micron Technology, Inc. patent applications on April 18th, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- MICRON TECHNOLOGY, INC. patent applications on July 4th, 2024
- Micron Technology, Inc. patent applications on March 27th, 2025
R
S
- Samsung display co., ltd. (20240295904). DISPLAY DEVICE, METHOD OF MANUFACTURING WINDOW, AND METHOD OF MANUFACTURING DISPLAY DEVICE simplified abstract
- Samsung Display Co., LTD. patent applications on September 5th, 2024
- Samsung electronics co., ltd. (20240128145). SEMICONDUCTOR PACKAGES AND METHOD FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240162225). SEMICONDUCTOR DEVICE AND METHODS OF FORMING PATTERNS simplified abstract
- Samsung electronics co., ltd. (20240217059). CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD OF CONTROLLING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240263072). ETCHANT COMPOSITION FOR ETCHING SILICON AND SILICON GERMANIUM, AND PREPARATION METHOD OF PATTERN USING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240274598). INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240278383). CHEMICAL MECHANICAL POLISHING APPARATUS AND CHEMICAL MECHANICAL POLISHING METHOD simplified abstract
- Samsung electronics co., ltd. (20240317622). ULTRAPURE WATER PRODUCTION SYSTEM, SEMICONDUCTOR PROCESSING SYSTEM INCLUDING THE SAME, AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240332059). METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240429057). METHODS OF FORMING A SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERNS ON A BONDING LAYER AND SEMICONDUCTOR DEVICES FORMED BY THE SAME
- Samsung electronics co., ltd. (20250096001). METHOD OF PROCESSING A SUBSTRATE
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 15th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 22nd, 2024
- Samsung Electronics Co., Ltd. patent applications on August 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on December 26th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 13th, 2025
- Samsung Electronics Co., Ltd. patent applications on February 6th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 4th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 20th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 20th, 2025
- Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 3rd, 2024
- Samsung Electronics Co., Ltd. patent applications on September 26th, 2024
- SK hynix Inc. patent applications on February 20th, 2025
T
- Taiwan semiconductor manufacturing co., ltd. (20240097034). METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240098959). FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240181598). MONOLITHIC PLATEN simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186180). INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE DIELECTRIC LAYER HAVING AIR GAP simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186373). EPITAXIAL STRUCTURES EXPOSED IN AIRGAPS FOR SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194522). SURFACE MODIFICATION LAYER FOR CONDUCTIVE FEATURE FORMATION simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194749). SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194753). FORMING A CAVITY WITH A WET ETCH FOR BACKSIDE CONTACT FORMATION simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240217054). CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250142). Gate-All-Around Device with Protective Dielectric Layer and Method of Forming the Same simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250155). METHODS OF FORMING SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240251539). METHOD FOR FORMING DIFFERENT TYPES OF DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240312836). INTEGRATED CIRCUIT PACKAGES AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240327677). CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD OF POLISHING METAL LAYER simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240420978). RETAINING RING FOR CHEMICAL-MECHANICAL POLISHING
- Taiwan semiconductor manufacturing co., ltd. (20240421205). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Taiwan semiconductor manufacturing co., ltd. (20240429304). ACTIVE REGION TRIMMING AFTER FORMATION OF SOURCE/DRAIN COMPONENTS
- Taiwan semiconductor manufacturing co., ltd. (20240429305). Semiconductor Device Having FIN Structure and Method of Forming Thereof
- Taiwan semiconductor manufacturing co., ltd. (20240429313). SELECTIVE BOTTOM SEED LAYER FORMATION FOR BOTTOM-UP EPITAXY
- Taiwan semiconductor manufacturing co., ltd. (20250098280). SEMICONDUCTOR METHOD AND DEVICE