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Category:H01J37/32
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Pages in category "H01J37/32"
The following 200 pages are in this category, out of 752 total.
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- 17641538. PLASMA PROCESSING DEVICE simplified abstract (Hitachi High-Tech Corporation)
- 17662107. SHUTTER DISC FOR A SEMICONDUCTOR PROCESSING TOOL simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17674977. Deposition Apparatus and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17695062. PLASMA ETCHING APPARATUS AND SEMICONDUCTOR PROCESSING SYSTEM simplified abstract (Samsung Electronics Co., Ltd.)
- 17713433. SUBSTRATE PROCESSING APPARATUS INCLUDING PLURALITY OF ELECTRODES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17750653. PLASMA ETCHING APPARATUS AND METHOD FOR OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17835864. PULSED VOLTAGE SOURCE FOR PLASMA PROCESSING APPLICATIONS simplified abstract (Applied Materials, Inc.)
- 17836657. PLASMA PRECLEAN SYSTEM FOR CLUSTER TOOL simplified abstract (Applied Materials, Inc.)
- 17837958. METHOD AND APPARATUS FOR ETCHING A SEMICONDUCTOR SUBSTRATE IN A PLASMA ETCH CHAMBER simplified abstract (Applied Materials, Inc.)
- 17849914. PHYSICAL VAPOR DEPOSITION APPARATUS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17850257. APPARATUS FOR ARCING DIAGNOSIS, PLASMA PROCESS EQUIPMENT INCLUDING THE SAME, AND ARCING DIAGNOSIS METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17850478. FOCUS RING, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, AND SUBSTRATE PROCESSING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17851385. GAS DISTRIBUTION RING FOR PROCESS CHAMBER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17859316. HYBRID MATCHER AND RADIO FREQUENCY MATCHING SYSTEM INCLUDING THE HYBRID MATCHER simplified abstract (Samsung Electronics Co., Ltd.)
- 17864541. PLASMA CONTROL APPARATUS AND PLASMA PROCESSING SYSTEM simplified abstract (Samsung Electronics Co., Ltd.)
- 17865773. PLASMA EDGE RING, PLASMA ETCHING APPARATUS INCLUDING THE SAME, AND PLASMA ETCHING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17869987. APPARATUS FOR GENERATING ETCHANTS FOR REMOTE PLASMA PROCESSES simplified abstract (Applied Materials, Inc.)
- 17874475. DEVICE FOR MEASURING DENSITY OF PLASMA, PLASMA PROCESSING SYSTEM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17877439. PLASMA GENERATOR, PLASMA PROCESSING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE PLASMA PROCESSING DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17883778. DRY ETCHING APPARATUS AND WAFER ETCHING SYSTEM USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17893783. PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17945408. Substrate Bombardment with Ions having Targeted Mass using Pulsed Bias Phase Control simplified abstract (TOKYO ELECTRON LIMITED)
- 17946947. BACKSIDE DEPOSITION FOR WAFER BOW MANAGEMENT simplified abstract (Applied Materials, Inc.)
- 17947675. WIDEBAND VARIABLE IMPEDANCE LOAD FOR HIGH VOLUME MANUFACTURING QUALIFICATION AND ON-SITE DIAGNOSTICS simplified abstract (Applied Materials, Inc.)
- 17948407. Optical Emission Spectroscopy for Advanced Process Characterization simplified abstract (TOKYO ELECTRON LIMITED)
- 17948768. High Aspect Ratio Contact (HARC) Etch simplified abstract (TOKYO ELECTRON LIMITED)
- 17948943. PLASMA BAFFLE, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, AND SUBSTRATE PROCESSING METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17949083. IN-SITU CARBON LINER FOR HIGH ASPECT RATIO FEATURES simplified abstract (Applied Materials, Inc.)
- 17950001. Method and Apparatus for In-Situ Dry Development simplified abstract (TOKYO ELECTRON LIMITED)
- 17951910. PLASMA PROCESSING APPARATUS INCLUDING GAS DISTRIBUTION PLATE simplified abstract (Samsung Electronics Co., Ltd.)
- 17961335. System and Method for Plasma Process Uniformity Control simplified abstract (Tokyo Electron Limited)
- 17970242. RF GENERATING DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17971205. IMPEDANCE CONTROL OF LOCAL AREAS OF A SUBSTRATE DURING PLASMA DEPOSITION THEREON IN A LARGE PECVD CHAMBER simplified abstract (Applied Materials, Inc.)
- 17971394. RESONANT ANTENNA FOR PHYSICAL VAPOR DEPOSITION APPLICATIONS simplified abstract (Tokyo Electron Limited)
- 17972958. Method for OES Data Collection and Endpoint Detection simplified abstract (Tokyo Electron Limited)
- 17981874. SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17984772. REDUCING ASPECT RATIO DEPENDENT ETCH WITH DIRECT CURRENT BIAS PULSING simplified abstract (Applied Materials, Inc.)
- 17987679. ADDITION OF EXTERNAL ULTRAVIOLET LIGHT FOR IMPROVED PLASMA STRIKE CONSISTENCY simplified abstract (Applied Materials, Inc.)
- 17988083. METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE simplified abstract (Applied Materials, Inc.)
- 17992421. APPARATUS AND METHOD OF MANUFACTURING DISPLAY DEVICE simplified abstract (Samsung Display Co., Ltd.)
- 17993055. GAS SUPPLY MODULE AND SUBSTRATE PROCESSING APPARATUS USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18025018. PLASMA PROCESSING APPARATUS simplified abstract (HITACHI HIGH-TECH CORPORATION)
- 18027200. APPARATUS DIAGNOSTIC APPARATUS, SEMICONDUCTOR MANUFACTURING APPARATUS SYSTEM, AND SEMICONDUCTOR APPARATUS MANUFACTURING SYSTEM simplified abstract (HITACHI HIGH-TECH CORPORATION)
- 18059222. SOLID-STATE SWITCH BASED HIGH-SPEED PULSER WITH PLASMA IEDF MODIFICATION CAPABILITY THROUGH MULTILEVEL OUTPUT FUNCTIONALITY simplified abstract (Applied Materials, Inc.)
- 18059658. SYSTEM AND METHODS FOR IMPLEMENTING A MICRO PULSING SCHEME USING DUAL INDEPENDENT PULSERS simplified abstract (Applied Materials, Inc.)
- 18063888. CHAMBER IMPEDANCE MANAGEMENT IN A PROCESSING CHAMBER simplified abstract (Applied Materials, Inc.)
- 18072021. SEMICONDUCTOR PROCESSING TOOL CLEANING simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18074385. Heated Pedestal With Impedance Matching Radio Frequency (RF) Rod simplified abstract (Applied Materials, Inc.)
- 18076234. THERMAL CHOKE PLATE simplified abstract (Applied Materials, Inc.)
- 18076725. LEARNING BASED TUNING IN A RADIO FREQUENCY PLASMA PROCESSING CHAMBER simplified abstract (Applied Materials, Inc.)
- 18077225. ELECTROCHEMICAL REDUCTION OF SURFACE METAL OXIDES simplified abstract (Applied Materials, Inc.)
- 18078841. Method of Selective Metal Deposition Using Separated Reactant Activation and Plasma Discharging Zone simplified abstract (Applied Materials, Inc.)
- 18085949. UPPER ELECTRODE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18089691. SUBSTRATE PROCESSING APPARATUS, SIGNAL SOURCE DEVICE, METHOD OF PROCESSING MATERIAL LAYER, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18090400. ENHANCED DRY DESMEAR EQUIPMENT WITH PROTECTIVE FILM PEELING CAPABILITY FOR INTEGRATED CIRCUITS simplified abstract (Intel Corporation)
- 18090436. METHODS FOR FORMING SEMICONDUCTOR DEVICES USING MODIFIED PHOTOMASK LAYER simplified abstract (Tokyo Electron Limited)
- 18093138. Programmable Electrostatic Chuck to Enhance Aluminum Film Morphology simplified abstract (Applied Materials, Inc.)
- 18093156. PLASMA-ENHANCED MOLYBDENUM DEPOSITION simplified abstract (Applied Materials, Inc.)
- 18095279. DIRECTIONAL SELECTIVE FILL FOR SILICON GAP FILL PROCESSES simplified abstract (Applied Materials, Inc.)
- 18098791. DRY ETCH OF BORON-CONTAINING MATERIAL simplified abstract (Applied Materials, Inc.)
- 18099039. REMOVABLE MASK LAYER TO REDUCE OVERHANG DURING RE-SPUTTER PROCESS IN PVD CHAMBERS simplified abstract (Applied Materials, Inc.)
- 18100199. LAMINATION PROCESS FOR PTFE-BASED ELECTRODE FILMS ON CURRENT COLLECTORS simplified abstract (GM Global Technology Operations LLC)
- 18105648. SUBSTRATE PROCESS APPARATUS AND SUBSTRATE PROCESS METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18118017. HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES simplified abstract (Applied Materials, Inc.)
- 18118543. Novel arc management algorithm of RF generator and match box for CCP plasma chambers simplified abstract (Applied Materials, Inc.)
- 18120916. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18121103. SUBSTRATE SUPPORTING APPARATUS, SUBSTRATE PROCESSING SYSTEM INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18121169. MANUFACTURING METHOD FOR GRAPHENE FILM simplified abstract (KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY)
- 18122574. APPARATUS AND METHODS FOR CONTROLLING SUBSTRATE TEMPERATURE DURING PROCESSING simplified abstract (Applied Materials, Inc.)
- 18124401. INDIRECT PLASMA HEALTH MONITORING simplified abstract (Applied Materials, Inc.)
- 18124954. SEMICONDUCTOR EQUIPMENT MONITORING APPARATUS, AND SEMICONDUCTOR EQUIPMENT INCLUDING THE SEMICONDUCTOR EQUIPMENT MONITORING APPARATUS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18133277. PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18136448. PLASMA PROCESSING APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)
- 18138192. METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18141341. SHOCK ABSORBING PLATE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18146253. System and Method for Plasma Processing simplified abstract (Tokyo Electron Limited)
- 18149829. SELECTIVE METAL SELECTIVITY IMPROVEMENT WITH RF PULSING simplified abstract (Applied Materials, Inc.)
- 18151223. Method for Etching Features in a Layer in a Substrate simplified abstract (Tokyo Electron Limited)
- 18156900. Plasma Etching with Metal Sputtering simplified abstract (Tokyo Electron Limited)
- 18156917. IN-SITU FOCUS RING COATING simplified abstract (Tokyo Electron Limited)
- 18158379. BIPOLAR ELECTROSTATIC CHUCK ELECTRODE DESIGNS simplified abstract (Applied Materials, Inc.)
- 18162182. SENSOR MODULE AND SUBSTRATE PROCESSING APPARATUS USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18162274. SEMICONDUCTOR PROCESSING TOOL AND METHODS OF OPERATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18164053. TARGET PROCESSING DEVICE AND TARGET PROCESSING METHOD simplified abstract (Kioxia Corporation)
- 18164117. PLASMA ETCH SYSTEM INCLUDING TUNABLE PLASMA SHEATH simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18166196. SEMICONDUCTOR PROCESSING TOOL AND METHODS OF OPERATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18171992. SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (Kioxia Corporation)
- 18181077. SEMICONDUCTOR CHAMBER COMPONENTS WITH ADVANCED COATING TECHNIQUES simplified abstract (Applied Materials, Inc.)
- 18184418. SEMICONDUCTOR PROCESS DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18185900. FACEPLATE LOADING PLATFORM simplified abstract (Applied Materials, Inc.)
- 18187558. Impedance Matching Network and Control Method simplified abstract (Tokyo Electron Limited)
- 18188540. PLASMA SENSOR MODULE simplified abstract (Samsung Electronics Co., Ltd.)
- 18199982. PLASMA CONTROL APPARATUS AND METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18206443. DIFFERENTIAL SUBSTRATE BACKSIDE COOLING simplified abstract (Applied Materials, Inc.)
- 18206456. ELECTRICAL BREAK FOR SUBSTRATE PROCESSING SYSTEMS simplified abstract (Applied Materials, Inc.)
- 18206847. CCP GAS DELIVERY NOZZLE simplified abstract (Applied Materials, Inc.)
- 18206861. REGENERATOR FOR FORELINE HEATING simplified abstract (Applied Materials, Inc.)
- 18208046. PLASMA SHUTTER AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18208530. PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18209035. SELECTIVE SELF-ASSEMBLED MONOLAYER (SAM) REMOVAL (Applied Materials, Inc.)
- 18209348. IMMERSED PLASMA SOURCE AND PROCESS CHAMBER FOR LARGE AREA SUBSTRATES (Applied Materials, Inc.)
- 18209649. SUBSTRATE SUPPORT (Applied Materials, Inc.)
- 18209711. IN-SITU ETCH AND INHIBITION IN PLASMA ENHANCED ATOMIC LAYER DEPOSITION (Applied Materials, Inc.)
- 18209716. SEMICONDUCTOR MANUFACTURING PROCESS CHAMBER COOLING FLANGE FOR REMOTE PLASMA SOURCE SUPPLY (Applied Materials, Inc.)
- 18210328. ELECTROSTATIC SUBSTRATE SUPPORT (Applied Materials, Inc.)
- 18210884. INTEGRATED GAS BOX AND ION SOURCE (Applied Materials, Inc.)
- 18210918. METHODS OF SELECTIVELY ETCHING SILICON NITRIDE (Applied Materials, Inc.)
- 18211887. FOCUS RING, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18217889. PLASMA PROCESS APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)
- 18218825. Shield Ring Mounting Using Compliant Hardware (Applied Materials, Inc.)
- 18220020. WIRELESS DATA COMMUNICATION IN PLASMA PROCESS CHAMBER THROUGH VI SENSOR AND RF GENERATOR simplified abstract (Applied Materials, Inc.)
- 18224664. PLASMA MONITORING SYSTEM simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18232123. PLASMA CONTROL DEVICE AND PLASMA CONTROL METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18232123. PLASMA CONTROL DEVICE AND PLASMA CONTROL METHOD simplified abstract (Samsung Electronics Co., Ltd.)
- 18232992. APPARATUS FOR PROCESSING PLASMA AND METHOD OF PROCESSING PLASMA AND MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18235653. SUBSTRATE PROCESSING APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)
- 18236042. METHODS OF ETCHING SILICON-AND-OXYGEN-CONTAINING FEATURES AT LOW TEMPERATURES (Applied Materials, Inc.)
- 18236201. SUSCEPTOR HEAT TRANSFER (Applied Materials, Inc.)
- 18236748. EDGE RING, DRY ETCHING APPARATUS HAVING THE SAME, AND OPERATION METHOD OF ETCHING APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)
- 18237673. ELECTROSTATIC CHUCK ASSEMBLY FOR CRYOGENIC APPLICATIONS simplified abstract (Applied Materials, Inc.)
- 18238874. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18239155. PLASMA PROCESSING APPARATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18240008. SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18244180. SUBSTRATE SUPPORT ASSEMBLY WITH IMPROVED THERMAL UNIFORMITY (Applied Materials, Inc.)
- 18244202. RADIO-FREQUENCY (RF) MATCHING NETWORK AND TUNING TECHNIQUE (Applied Materials, Inc.)
- 18263920. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18274808. PLASMA PROCESSING DEVICE, HIGH-FREQUENCY POWER SUPPLY CIRCUIT, AND IMPEDANCE MATCHING METHOD simplified abstract (Tokyo Electron Limited)
- 18275359. FILM FORMING DEVICE AND FILM FORMING METHOD simplified abstract (Tokyo Electron Limited)
- 18278276. TRIPOLAR ELECTRODE ARRANGEMENT FOR ELECTROSTATIC CHUCKS simplified abstract (Lam Research Corporation)
- 18281456. SPUTTER DEPOSITION SOURCE, MAGNETRON SPUTTER CATHODE, AND METHOD OF DEPOSITING A MATERIAL ON A SUBSTRATE simplified abstract (Applied Materials, Inc.)
- 18282292. ETCHING PLASMA PROCESSING APPARATUS INCLUDING CONSUMABLE METAL MEMBER (Research & Business Foundation SUNGKYUNKWAN UNIVERSITY)
- 18295466. PLASMA PROCESSING APPARATUS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18296944. PLASMA PROCESSING SYSTEMS WITH MATCHING NETWORK AND METHODS simplified abstract (Tokyo Electron Limited)
- 18298259. Advanced OES Characterization simplified abstract (Tokyo Electron Limited)
- 18327458. SUBSTRATE SUPPORTING DEVICE, A SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, AND A SUBSTRATE PROCESSING METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18334038. RESISTIVITY-CONTROLLED DIELECTRIC MATERIALS FOR SUBSTRATE SUPPORTS WITH IMPROVED HIGH TEMPERATURE CHUCKING (Applied Materials, Inc.)
- 18334063. BROADBAND SUPPLY CIRCUITRY FOR A PLASMA PROCESSING SYSTEM simplified abstract (Applied Materials, Inc.)
- 18344307. APPARATUS FOR PROVIDING RF POWER AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18351242. PLASMA DIAGNOSTIC APPARATUS AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18354220. SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
- 18357725. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18368052. VACUUM SEALING INTEGRITY OF CRYOGENIC ELECTROSTATIC CHUCKS USING NON-CONTACT SURFACE TEMPERATURE MEASURING PROBES simplified abstract (Applied Materials, Inc.)
- 18370132. SEMICONDUCTOR CHAMBER COMPONENTS WITH ADVANCED DUAL LAYER NICKEL-CONTAINING COATINGS (Applied Materials, Inc.)
- 18370155. PLASMA SOURCE WITH MULTIPLE EXTRACTION APERTURES (Applied Materials, Inc.)
- 18370158. ADJUSTABLE EXIT ANGLE SOURCE FOR IONS AND NEUTRAL PARTICLES (Applied Materials, Inc.)
- 18370268. SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18370534. ALLOY COMPOSITION FOR CORROSION RESISTANCE (Applied Materials, Inc.)
- 18371641. FLUID CONDUIT AND FLANGE FOR HIGH BIAS APPLICATIONS simplified abstract (Applied Materials, Inc.)
- 18372792. Selective Deposition of Thin Films with Improved Stability simplified abstract (Applied Materials, Inc.)
- 18372811. LARGE DIAMETER POROUS PLUG FOR ARGON DELIVERY simplified abstract (Applied Materials, Inc.)
- 18372818. SOFT-CHUCKING SCHEME FOR IMPROVED BACKSIDE PARTICLE PERFORMANCE simplified abstract (Applied Materials, Inc.)
- 18372954. COOLING PLATE AND PLASMA PROCESSING CHAMBER INCLUDING THE SAME simplified abstract (SEMES CO., LTD.)
- 18372995. SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18377918. PERFORMING RADIO FREQUENCY MATCHING CONTROL USING A MODEL-BASED DIGITAL TWIN simplified abstract (Applied Materials, Inc.)
- 18380144. SEMICONDUCTOR PROCESSING APPARATUS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18381006. SHOWER HEAD AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SHOWER HEAD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18382809. FREQUENCY-VARIABLE POWER SUPPLY AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18383207. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18383211. PROCESS CHAMBER, SUBSTRATE TREATING APPARATUS INCLUDING THE SAME, AND OPERATING METHOD OF THE SUBSTRATE TREATING APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)
- 18389827. PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18390078. APPARATUS FOR TREATING SUBSTRATE simplified abstract (SEMES CO., LTD.)
- 18390956. EXHAUST GAS PROCESSING APPARATUS HAVING PLASMA SOURCE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18392102. SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18392205. FILTER CIRCUIT AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18392294. PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD simplified abstract (Tokyo Electron Limited)
- 18395788. ETCHING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18395879. ETCHING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18395907. PARTIAL BREAKDOWN OF PRECURSORS FOR ENHANCED ALD FILM GROWTH simplified abstract (ASM IP Holding B.V.)
- 18396280. HIGH-FREQUENCY POWER SUPPLY APPARATUS simplified abstract (DAIHEN Corporation)
- 18396319. HIGH-FREQUENCY POWER SUPPLY DEVICE simplified abstract (DAIHEN Corporation)
- 18396451. HIGH-FREQUENCY POWER SUPPLY SYSTEM simplified abstract (DAIHEN Corporation)
- 18396553. ELECTROSTATIC CHUCK simplified abstract (Samsung Electronics Co., Ltd.)
- 18396693. HIGH-FREQUENCY POWER SUPPLY SYSTEM simplified abstract (DAIHEN Corporation)
- 18396695. HIGH-FREQUENCY POWER SUPPLY SYSTEM simplified abstract (DAIHEN Corporation)
- 18396696. METHOD OF CONTROLLING HIGH-FREQUENCY POWER SUPPLY SYSTEM simplified abstract (DAIHEN Corporation)
- 18396857. METHOD AND SYSTEM FOR DEPOSITING BORON CARBON NITRIDE simplified abstract (ASM IP Holding B.V.)
- 18398146. ETCHING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18398162. PLASMA PROCESSING SYSTEM AND EDGE RING REPLACEMENT METHOD simplified abstract (Tokyo Electron Limited)
- 18398217. PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18398796. METHODS FOR FORMING GAP-FILLING MATERIALS AND RELATED APPARATUS AND STRUCTURES simplified abstract (ASM IP Holding B.V.)
- 18399821. ELECTROSTATIC CHUCK, SUBSTRATE PROCESSING APPARATUS, AND MANUFACTURING METHOD OF ELECTROSTATIC CHUCK simplified abstract (Tokyo Electron Limited)
- 18401881. DETECTOR FOR PROCESS KIT RING WEAR simplified abstract (Applied Materials, Inc.)
- 18403982. BIASABLE ELECTROSTATIC CHUCK simplified abstract (Applied Materials, Inc.)
- 18404423. RING ASSEMBLY AND SEMICONDUCTOR WAFER ETCHING DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18404542. PLASMA-ASSISTED FILM REMOVAL FOR WAFER FABRICATION simplified abstract (Micron Technology, Inc.)
- 18404645. SENSOR DEVICE AND SEMICONDUCTOR PROCESSING APPARATUS USING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18406898. SEMICONDUCTOR PROCESSING APPARATUS USING PLASMA (Samsung Electronics Co., Ltd.)
- 18410031. ETCHING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18414681. SUBSTRATE PROCESSING APPARATUS (SAMSUNG ELECTRONICS CO., LTD.)
- 18416880. PROCESSING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18416990. SEMICONDUCTOR MANUFACTURING DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18418930. METHODS AND APPARATUS FOR REDUCING SPUTTERING OF A GROUNDED SHIELD IN A PROCESS CHAMBER simplified abstract (Applied Materials, Inc.)
- 18419389. MONOLITHIC MODULAR MICROWAVE SOURCE WITH INTEGRATED PROCESS GAS DISTRIBUTION simplified abstract (Applied Materials, Inc.)
- 18420184. APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18421988. PROCESSING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18423577. TOOLS AND METHODS FOR SUBTRACTIVE METAL PATTERNING simplified abstract (Intel Corporation)
- 18423636. Dynamic Phased Array Plasma Source For Complete Plasma Coverage Of A Moving Substrate simplified abstract (Applied Materials, Inc.)
- 18429515. PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18433862. GAS SUPPLY SYSTEM, GAS CONTROL SYSTEM, PLASMA PROCESSING APPARATUS, AND GAS CONTROL METHOD simplified abstract (Tokyo Electron Limited)
- 18433899. SYSTEM AND METHOD FOR DIAGNOSING PLASMA CHAMBER simplified abstract (ASM IP Holding B.V.)
