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Category:G11C16/34
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Pages in category "G11C16/34"
The following 200 pages are in this category, out of 470 total.
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- 17461278. THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17706097. NONVOLATILE MEMORY AND STORAGE DEVICE INCLUDING SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17744942. SEMICONDUCTOR DEVICE PERFORMING BLOCK PROGRAM AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 17806103. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17817408. MEMORY DEVICE AND PROGRAM METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17819826. DETECTING A MEMORY WRITE RELIABILITY RISK WITHOUT USING A WRITE VERIFY OPERATION simplified abstract (Micron Technology, Inc.)
- 17820280. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17830800. CROSS-TEMPERATURE COMPENSATION IN NON-VOLATILE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17831266. CELL VOLTAGE DROP COMPENSATION CIRCUIT simplified abstract (Micron Technology, Inc.)
- 17837345. OPEN BLOCK BOUNDARY GROUP PROGRAMMING FOR NON-VOLATILE MEMORY simplified abstract (Western Digital Technologies, Inc.)
- 17838481. Storage System and Method for Inference of Read Thresholds Based on Memory Parameters and Conditions simplified abstract (Western Digital Technologies, Inc.)
- 17842278. ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17847545. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17852129. NON-VOLATILE MEMORY WITH PRECISE PROGRAMMING simplified abstract (Western Digital Technologies, Inc.)
- 17856691. ADAPTIVE TEMPERATURE COMPENSATION FOR A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17860690. MANAGING COMPENSATION FOR CHARGE COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17860701. MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY simplified abstract (Micron Technology, Inc.)
- 17860711. MANAGING PROGRAM VERIFY VOLTAGE OFFSETS FOR CHARGE COUPLING AND LATERAL MIGRATION COMPENSATION IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17866904. NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17874828. RELIABILITY BASED DATA VERIFICATION simplified abstract (Micron Technology, Inc.)
- 17875827. APPARATUS WITH CIRCUIT MANAGEMENT MECHANISM AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 17881009. MEMORY DEVICE AND METHOD FOR DETERMINING START POINT AND END POINT OF VERIFICATION OPERATION OF TARGET STATE DURING PROGRAMMING simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17884107. MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES USING SEGMENTATION simplified abstract (Micron Technology, Inc.)
- 17884113. MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES BASED ON A SENSITIVITY METRIC simplified abstract (Micron Technology, Inc.)
- 17887244. VOLTAGE WINDOW ADJUSTMENT simplified abstract (Micron Technology, Inc.)
- 17893476. STORAGE CONTROLLER USING HISTORY DATA, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17893755. ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS simplified abstract (Micron Technology, Inc.)
- 17894248. APPARATUS AND METHODS FOR PROGRAMMING DATA STATES OF MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 17894528. ADAPTIVE ERROR AVOIDANCE IN THE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17895886. READ COUNTER ADJUSTMENT FOR DELAYING READ DISTURB SCANS simplified abstract (Micron Technology, Inc.)
- 17897441. MANAGING DEFECTIVE BLOCKS DURING MULTI-PLANE PROGRAMMING OPERATIONS IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17898043. NAND DETECT EMPTY PAGE SCAN simplified abstract (Micron Technology, Inc.)
- 17899409. TWO-PASS CORRECTIVE PROGRAMMING FOR MEMORY CELLS THAT STORE MULTIPLE BITS AND POWER LOSS MANAGEMENT FOR TWO-PASS CORRECTIVE PROGRAMMING simplified abstract (Micron Technology, Inc.)
- 17939021. STORAGE SYSTEM AND OPERATING METHOD OF STORAGE CONTROLLER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17948556. DRIFT COMPENSATION FOR CODEWORDS IN MEMORY simplified abstract (Micron Technology, Inc.)
- 17953003. FLASH MEMORY DEVICE AND DATA RECOVER READ METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17955858. OPERATION METHOD OF MEMORY DEVICE AND OPERATION METHOD OF MEMORY SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17958386. NONVOLATILE MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17960346. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17970315. APPARATUS WITH MULTI-BIT CELL READ MECHANISM AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 17982550. MEMORY DEVICE FOR DETECTING FAIL CELL AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17983705. SEMICONDUCTOR DEVICE FOR IMPROVING RETENTION PERFORMANCE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18057386. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18079433. OPERATION METHOD OF NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18088046. NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18091621. DIGITAL VERIFY FAILBIT COUNT (VFC) CIRCUIT simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18091645. DIGITAL VERIFY FAILBIT COUNT (VFC) CIRCUIT simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18103496. NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18103754. NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME AND PROGRAM METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18118216. DATA RETENTION EVENT PREPARATION/RECOVERY SYSTEM simplified abstract (Dell Products L.P.)
- 18122758. FEATURE BASED READ THRESHOLD ESTIMATION IN NAND FLASH MEMORY simplified abstract (Kioxia Corporation)
- 18132802. MEMORY DEVICE AND PROGRAM OPERATION THEREOF simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18177685. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18179478. SELF-CORRECTED THRESHOLD VOLTAGES IN NON-VOLATILE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18185127. METHOD FOR CONTROLLING TEMPERATURE OF CHIPS AND RELATED CHIPS simplified abstract (Yangtze Memory Technologies Co., LTD.)
- 18193474. MEMORY DEVICE FOR PERFORMING PROGRAM OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18194468. MEMORY DEVICE RELATED TO A PROGRAM OPERATION, METHOD OF OPERATING THE MEMORY DEVICE, AND STORAGE DEVICE INCLUDING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18201685. MEMORY PROGRAMMING METHOD, MEMORY DEVICE, AND MEMORY SYSTEM simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18204189. ADAPTIVE CALIBRATION FOR THRESHOLD VOLTAGE OFFSET BINS simplified abstract (Micron Technology, Inc.)
- 18205835. MEMORY DEVICE AND OPERATION THEREOF simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18218845. Light-Weight BES Approximation simplified abstract (Western Digital Technologies, Inc.)
- 18223358. GENERATION OF QUICK PASS WRITE BIASES IN A MEMORY DEVICE simplified abstract (WESTERN DIGITAL TECHNOLOGIES, INC.)
- 18225735. LOOP DEPENDENT BIT LINE AND READ BIASES IN A MEMORY DEVICE simplified abstract (WESTERN DIGITAL TECHNOLOGIES, INC.)
- 18230371. CHANNEL PRE-CHARGE PROCESS FOR MEMORY DEVICES (Western Digital Technologies, Inc.)
- 18231127. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18233420. CORRECTIVE PROGRAM VERIFY OPERATION WITH IMPROVED READ WINDOW BUDGET RETENTION simplified abstract (Micron Technology, Inc.)
- 18237309. INTEGRATED FLAG BYTE READ DURING FAILED BYTE COUNT READ COMPENSATION IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18238212. NONVOLATILE MEMORY DEVICE, OPERATION METHOD OF A NONVOLATILE MEMORY DEVICE, AND OPERATION METHOD OF A CONTROLLER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18239193. MEMORY DEVICES WITH PROGRAM VERIFY LEVELS BASED ON COMPENSATION VALUES simplified abstract (Micron Technology, Inc.)
- 18242061. Data Storage Device and Method for Predicting Future Read Thresholds simplified abstract (Western Digital Technologies, Inc.)
- 18295726. APPARATUS AND METHOD FOR PROGRAMMING AND VERIFYING DATA IN A NONVOLATILE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18299714. SEMICONDUCTOR DEVICE CAPABLE OF CHECKING DETERIORATION OF SELECT TRANSISTOR AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18300958. MEMORY DEVICE FOR PERFORMING FOGGY-FINE PROGRAM OPERATION AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18302728. MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18310290. SEMICONDUCTOR DEVICE FOR PROGRAMMING OR ERASING SELECT TRANSISTORS AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18310760. SEMICONDUCTOR DEVICE PERFORMING PROGRAM OPERATION AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18317670. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18318725. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18320200. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18321576. PAGE BUFFER, MEMORY DEVICE INCLUDING PAGE BUFFER AND MEMORY SYSTEM INCLUDING MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18321617. MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18323158. MEMORY PROGRAMMING simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18325808. MEMORY DEVICE PERFORMING ERASE OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18327759. METHOD OF OPERATING A CONTROLLER AND A MEMORY DEVICE RELATED TO RECOVERING DATA simplified abstract (SK hynix Inc.)
- 18330202. MEMORY DEVICE, PROGRAMMING METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18331689. MEMORY DEVICE PERFORMING PROGRAM OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18333366. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18336683. LEAKAGE REDUCTION FOR CONTINUOUS ACTIVE DESIGNS (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18337589. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18338857. MEMORY DEVICE WITH IMPROVED THRESHOLD VOLTAGE DISTRIBUTION AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18344677. SEMICONDUCTOR MEMORY DEVICE FOR PERFORMING BLIND PROGRAM OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18347401. SEMICONDUCTOR DEVICE AND OPERATING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18352963. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18355090. ENHANCED READ RETRY (ERR) FOR DATA RECOVERY IN FLASH MEMORY simplified abstract (WESTERN DIGITAL TECHNOLOGIES, INC.)
- 18355339. ADAPTIVE ERASE VOLTAGES FOR NON-VOLATILE MEMORY simplified abstract (SanDisk Technologies LLC)
- 18356522. NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING DEFECTIVE MEMORY CELL BLOCK OF NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18357339. NON-VOLATILE MEMORY WTH LOOP DEPENDANT RAMP-UP RATE simplified abstract (SanDisk Technologies LLC)
- 18357354. NON-VOLATILE MEMORY THAT DYNAMICALLY REDUCES THE NUMBER OF BITS OF DATA STORED PER MEMORY CELL simplified abstract (Western Digital Technologies, Inc.)
- 18357436. NON-VOLATILE MEMORY WITH ADAPTIVE DUMMY WORD LINE BIAS simplified abstract (SanDisk Technologies LLC)
- 18357489. NON-VOLATILE MEMORY WITH LOWER CURRENT PROGRAM-VERIFY simplified abstract (SanDisk Technologies LLC)
- 18358651. NON-VOLATILE MEMORY WITH INTELLIGENT ERASE TESTING TO AVOID NEIGHBOR PLANE DISTURB simplified abstract (Western Digital Technologies, Inc.)
- 18368951. BIT LINE TIMING BASED CELL TRACKING QUICK PASS WRITE FOR PROGRAMMING NON-VOLATILE MEMORY APPARATUSES (Western Digital Technologies, Inc.)
- 18369028. THRESHOLD VOLTAGE BUDGET BY EMPLOYING AN OXIDE-NITRIDE PITCH DEPENDENT THRESHOLD VOLTAGE WINDOW (Western Digital Technologies, Inc.)
- 18369296. NEIGHBOR PLANE DISTURB (NPD) DETECTION FOR MEMORY DEVICES (Western Digital Technologies, Inc.)
- 18369576. REVIVING FAULTY NAND BY AI DATA MODULATION (SAMSUNG ELECTRONICS CO., LTD.)
- 18375173. SEMICONDUCTOR MEMORY DEVICES AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18384681. FLASH MEMORY REDUCING PROGRAM RISING TIME AND PROGRAM METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18388342. MANAGING WRITE DISTURB BASED ON IDENTIFICATION OF FREQUENTLY-WRITTEN MEMORY UNITS simplified abstract (Micron Technology, Inc.)
- 18393354. MANAGING TRAP-UP IN A MEMORY SYSTEM simplified abstract (Micron Technology, Inc.)
- 18395336. OPERATION METHOD FOR MEMORY, MEMORY, MEMORY SYSTEM AND ELECTRONIC SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18399157. SEMICONDUCTOR DEVICE (SK hynix Inc.)
- 18400049. NON-VOLATILE MEMORY DEVICE AND RECOVERY METHOD OF NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18404742. ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18423047. MEMORY SYSTEM AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18425383. SELECTIVE DATA PATTERN WRITE SCRUB FOR A MEMORY SYSTEM simplified abstract (Micron Technology, Inc.)
- 18429753. OPTIMIZING READ ERROR HANDLING IN A MEMORY SUB-SYSTEM simplified abstract (Micron Technology, Inc.)
- 18437123. MEMORY DEVICE, OPERATION METHOD THEREOF, AND READABLE STORAGE MEDIUM (Yangtze Memory Technologies Co., Ltd.)
- 18438636. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18452020. WEAR LEVELING IN SOLID STATE DRIVES simplified abstract (Micron Technology, Inc.)
- 18458071. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18459745. STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18462433. MEMORY DEVICE FOR PERFORMING ERASE VERIFY OPERATION ON CELL STRING GROUP BASIS AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18465541. METHOD OF OPERATING MEMORY DEVICE AND MEMORY DEVICE PERFORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18471430. DEVICE PROVIDING IMPROVED FAIL BIT COUNT OPERATION simplified abstract (Samsung Electronics Co., Ltd.)
- 18491966. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18494768. MEMORY DEVICE FOR PERFORMING CHANNEL PRECHARGE OPERATION AND METHOD FOR OPERATING THE SAME (SK hynix Inc.)
- 18494769. MEMORY DEVICE PERMITTING OVERWRITE PROGRAM OPERATION AND OPERATION METHOD THEREOF (SK hynix Inc.)
- 18505855. MEDIA MANAGEMENT SCANNING WITH UNIFIED CRITERIA TO ALLEVIATE FAST AND LATENT READ DISTURB simplified abstract (Micron Technology, Inc.)
- 18505933. SEMICONDUCTOR MEMORY DEVICE PERFORMING PROGRAM OPERATION (SK hynix Inc.)
- 18507387. MEMORY READ VOLTAGE THRESHOLD TRACKING BASED ON MEMORY DEVICE-ORIGINATED METRICS CHARACTERIZING VOLTAGE DISTRIBUTIONS simplified abstract (Micron Technology, Inc.)
- 18509301. DATA STORAGE DEVICE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18512279. NONVOLATILE MEMORY DEVICES AND METHODS OF CONTROLLING ERASE OPERATIONS OF NONVOLATILE MEMORY DEVICES (SAMSUNG ELECTRONICS CO., LTD.)
- 18519248. DYNAMIC READ CALIBRATION simplified abstract (Micron Technology, Inc.)
- 18522829. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18524458. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18524721. MANAGING ASYNCHRONOUS POWER LOSS IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18527978. NAND DATA PLACEMENT SCHEMA simplified abstract (Micron Technology, Inc.)
- 18528214. METHOD FOR OPERATING A MEMORY, A MEMORY AND A MEMORY SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18528375. TRIM SETTING DETERMINATION ON A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18531872. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18542128. METHOD OF OPERATING MEMORY, MEMORY, AND MEMORY SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18581018. NONVOLATILE MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18582390. NONVOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF, AND MEMORY SYSTEM INCLUDING THE SAME simplified abstract (SK Hynix Inc.)
- 18583197. SLOW-CHARGE-LOSS TRACKING USING FEEDBACK-CONTROL LOOP simplified abstract (Micron Technology, Inc.)
- 18583632. MEMORY DEVICE RELATED TO PERFORMING A PROGRAM OPERATION ON MEMORY CELLS simplified abstract (SK hynix Inc.)
- 18591856. SEMICONDUCTOR STORAGE DEVICE AND MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18593570. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18596412. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18596541. MEMORY DEVICE AND METHOD simplified abstract (Kioxia Corporation)
- 18598988. STORAGE DEVICE AND OPERATING METHOD THEREOF (Samsung Electronics Co., Ltd.)
- 18599471. MEMORY DEVICE AND METHOD OF OPERATING WORDLINES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18599848. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18602974. SUB-BLOCK DEFINITION IN A MEMORY DEVICE USING SEGMENTED SOURCE PLATES simplified abstract (Micron Technology, Inc.)
- 18604192. TECHNIQUES FOR PARALLEL MEMORY CELL ACCESS simplified abstract (Micron Technology, Inc.)
- 18604276. FAST BIT ERASE FOR UPPER TAIL TIGHTENING OF THRESHOLD VOLTAGE DISTRIBUTIONS simplified abstract (MICRON TECHNOLOGY, INC.)
- 18604411. BOOST-BY-DECK DURING A PROGRAM OPERATION ON A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18604858. MULTI-PROGRAM OF MEMORY CELLS WITHOUT INTERVENING ERASE OPERATIONS simplified abstract (MICRON TECHNOLOGY, INC.)
- 18610282. SEMICONDUCTOR MEMORY simplified abstract (Kioxia Corporation)
- 18632972. MEMORY DEVICE FOR PERFORMING A PROGRAM OPERATION AND AN OPERATING METHOD OF THE MEMORY DEVICE (SK hynix Inc.)
- 18633362. PULSE BASED MULTI-LEVEL CELL PROGRAMMING simplified abstract (Micron Technology, Inc.)
- 18636569. MEMORY DEVICE AND PROGRAM OPERATION THEREOF simplified abstract (Yangtze Memory Technologies Co., LTD.)
- 18637474. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18649582. HYBRID PARALLEL PROGRAMMING OF SINGLE-LEVEL CELL MEMORY simplified abstract (Micron Technology, Inc.)
- 18651032. APPARATUS WITH POST-MANUFACTURING DATA UPDATE MECHANISM AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 18654302. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18657672. READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION simplified abstract (Micron Technology, Inc.)
- 18662238. SEMICONDUCTOR MEMORY simplified abstract (KIOXIA CORPORATION)
- 18662971. SEMICONDUCTOR MEMORY DEVICE simplified abstract (KIOXIA CORPORATION)
- 18666819. NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND READ METHOD OF MEMORY SYSTEM simplified abstract (SK hynix Inc.)
- 18669140. MULTI-STATE PROGRAMMING OF MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18671835. TRACKING RC TIME CONSTANT BY WORDLINE IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18672640. ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18677727. MEMORY SYSTEM, CONTROL METHOD THEREOF, AND PROGRAM simplified abstract (Kioxia Corporation)
- 18679914. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18734833. NONVOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE, AND OPERATING METHOD OF STORAGE DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18739769. WORD LINE BASED PROGRAM VOLTAGE ADJUSTMENT (Micron Technology, Inc.)
- 18753717. MANAGING PROGRAM VERIFY VOLTAGE OFFSETS FOR CHARGE COUPLING AND LATERAL MIGRATION COMPENSATION IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18755046. PERFORMING BLOCK-LEVEL MEDIA MANAGEMENT OPERATIONS FOR BLOCK STRIPES IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18757422. SELECTIVE USE OF A WORD LINE MONITORING PROCEDURE FOR RELIABILITY-RISK WORD LINES (Micron Technology, Inc.)
- 18758496. ADAPTIVE TEMPERATURE COMPENSATION FOR A MEMORY DEVICE (Micron Technology, Inc.)
- 18771479. ACCESS LINE VOLTAGE RAMP RATE ADJUSTMENT (Micron Technology, Inc.)
- 18774642. ENHANCING READ WINDOW BUDGET USING READ VERIFY (Micron Technology, Inc.)
- 18784022. ALTERNATIVE ERASE SCHEMES FOR RELIABILITY-RISK WORD LINES (Micron Technology, Inc.)
- 18785866. PREDICTIVE PROGRAM VERIFICATION (Micron Technology, Inc.)
- 18796585. NON-VOLATILE MEMORY DEVICE AND A METHOD OF OPERATING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18798155. MEMORY SYSTEM AND CONTROL METHOD THEREOF (Kioxia Corporation)
- 18815433. NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH PERFORMS IMPROVED ERASE OPERATION (Kioxia Corporation)
- 18818527. SEMICONDUCTOR STORAGE DEVICE (Kioxia Corporation)
- 18820480. DETECTING A MEMORY WRITE RELIABILITY RISK WITHOUT USING A WRITE VERIFY OPERATION (Micron Technology, Inc.)
- 18821402. SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM, AND CONTROL METHOD (Kioxia Corporation)
- 18823749. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18829434. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18892390. NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD OF THE SAME (Samsung Electronics Co., Ltd.)
- 18895236. READ COUNTER ADJUSTMENT FOR DELAYING READ DISTURB SCANS (Micron Technology, Inc.)
- 18953248. THREE DIMENSIONAL STACKED NONVOLATILE SEMICONDUCTOR MEMORY (Kioxia Corporation)
- 18954008. READ CALIBRATION BY SECTOR OF MEMORY (Micron Technology, Inc.)
- 18956073. SEMICONDUCTOR STORAGE DEVICE (Kioxia Corporation)
- 18958121. ELIMINATING WRITE DISTURB FOR SYSTEM METADATA IN A MEMORY SUB-SYSTEM (Micron Technology, Inc.)
- 18959467. BEST READ REFERENCE VOLTAGE SEARCH OF 3D NAND MEMORY (Yangtze Memory Technologies Co., Ltd.)
- 18960340. ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS (Micron Technology, Inc.)