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Category:G11C16/26
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Pages in category "G11C16/26"
The following 200 pages are in this category, out of 440 total.
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- 17461278. THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17742874. NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17742879. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17750315. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17830677. STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17830800. CROSS-TEMPERATURE COMPENSATION IN NON-VOLATILE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17831350. MEMORY BLOCK CHARACTERISTIC DETERMINATION simplified abstract (Micron Technology, Inc.)
- 17836453. PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17837345. OPEN BLOCK BOUNDARY GROUP PROGRAMMING FOR NON-VOLATILE MEMORY simplified abstract (Western Digital Technologies, Inc.)
- 17838481. Storage System and Method for Inference of Read Thresholds Based on Memory Parameters and Conditions simplified abstract (Western Digital Technologies, Inc.)
- 17842278. ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17847545. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17852057. METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17852129. NON-VOLATILE MEMORY WITH PRECISE PROGRAMMING simplified abstract (Western Digital Technologies, Inc.)
- 17854163. MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17856691. ADAPTIVE TEMPERATURE COMPENSATION FOR A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17860690. MANAGING COMPENSATION FOR CHARGE COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17860701. MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY simplified abstract (Micron Technology, Inc.)
- 17876346. MEMORY CELL VOLTAGE LEVEL SELECTION simplified abstract (Micron Technology, Inc.)
- 17881039. MEMORY DEVICE INCLUDING VERTICAL CHANNEL STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 17881352. MEMORY DEVICE FOR CONTROLLING WORD LINE VOLTAGE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17884107. MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES USING SEGMENTATION simplified abstract (Micron Technology, Inc.)
- 17887348. INDEPENDENT SENSING TIMES simplified abstract (Micron Technology, Inc.)
- 17888298. STORING BITS WITH CELLS IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17893476. STORAGE CONTROLLER USING HISTORY DATA, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17894398. CODING TO DECREASE ERROR RATE DISCREPANCY BETWEEN PAGES simplified abstract (Micron Technology, Inc.)
- 17895886. READ COUNTER ADJUSTMENT FOR DELAYING READ DISTURB SCANS simplified abstract (Micron Technology, Inc.)
- 17898604. MEMORY DEVICES INCLUDING LOGIC NON-VOLATILE MEMORY simplified abstract (Micron Technology, Inc.)
- 17898733. MEMORY DEVICE AND METHOD FOR OPERATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17931935. SUSPENDING MEMORY ERASE OPERATIONS TO PERFORM HIGHER PRIORITY MEMORY COMMANDS simplified abstract (Micron Technology, Inc.)
- 17938153. APPARATUS WITH READ LEVEL MANAGEMENT AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 17940945. Weight Calibration Check for Integrated Circuit Devices having Analog Inference Capability simplified abstract (Micron Technology, Inc.)
- 17941831. ADAPTIVE PRE-READ MANAGEMENT IN MULTI-PASS PROGRAMMING simplified abstract (Micron Technology, Inc.)
- 17942977. READ LEVEL COMPENSATION FOR PARTIALLY PROGRAMMED BLOCKS OF MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17956225. STORAGE CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17961048. SOLID STATE DRIVE (SSD) AND OPERATING METHOD simplified abstract (Samsung Electronics Co., Ltd.)
- 17970315. APPARATUS WITH MULTI-BIT CELL READ MECHANISM AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 17972224. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 17973005. Memory system and memory access interface device thereof simplified abstract (REALTEK SEMICONDUCTOR CORPORATION)
- 18057386. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18058555. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18067224. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND READ METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18068337. STORAGE DEVICES AND METHODS OF OPERATING STORAGE DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18091174. OPERATION METHOD OF MEMORY SYSTEM, MEMORY SYSTEM AND ELECTRONIC DEVICE simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18099808. NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING READ OPERATION OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18103496. NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18122758. FEATURE BASED READ THRESHOLD ESTIMATION IN NAND FLASH MEMORY simplified abstract (Kioxia Corporation)
- 18124407. TRACKING AND UPDATING READ COMMAND VOLTAGE THRESHOLDS IN SOLID-STATE DRIVES simplified abstract (Kioxia Corporation)
- 18151734. AUTOMATIC PROGRAM VOLTAGE SELECTION NETWORK simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18170893. NON-VOLATILE MEMORY DEVICE DETERMINING READ RECLAIM, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18176347. FLASH MEMORY DEVICE FOR ADJUSTING TRIP VOLTAGE USING VOLTAGE REGULATOR AND SENSING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18177685. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18177877. MEMORY SYSTEM AND METHOD FOR CONTROLLING SEMICONDUCTOR MEMORY simplified abstract (Kioxia Corporation)
- 18183008. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18197258. MEMORY DEVICE INCLUDING PAGE BUFFER CIRCUIT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18205835. MEMORY DEVICE AND OPERATION THEREOF simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18215320. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18218845. Light-Weight BES Approximation simplified abstract (Western Digital Technologies, Inc.)
- 18228291. MEMORY DEVICE PRODUCING METADATA CHARACTERIZING APPLIED READ VOLTAGE LEVEL WITH RESPECT TO VOLTAGE DISTRIBUTIONS simplified abstract (Micron Technology, Inc.)
- 18229748. OPTIMIZED READ CURRENT CONSUMPTION BASED ON LOWER PAGE READ INFORMATION FOR NON-VOLATILE MEMORY APPARATUS (Western Digital Technologies, Inc.)
- 18230270. OPEN BLOCK DETECTION METHOD USING FOR FIRST AND SECOND TIME PERIOD READ TIME VALLEY FOR NON-VOLATILE MEMORY APPARATUS (Western Digital Technologies, Inc.)
- 18237309. INTEGRATED FLAG BYTE READ DURING FAILED BYTE COUNT READ COMPENSATION IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18239140. SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CHIP BONDED TO A CMOS CHIP INCLUDING A PERIPHERAL CIRCUIT simplified abstract (Kioxia Corporation)
- 18239589. DATA FLIP-FLOP CIRCUIT OF NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18242061. Data Storage Device and Method for Predicting Future Read Thresholds simplified abstract (Western Digital Technologies, Inc.)
- 18242232. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18296373. SEMICONDUCTOR DEVICE AND OPERATING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18306654. MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18319292. MEMORY DEVICE, OPERATING METHOD THEREOF, AND VERIFICATION RESULT GENERATOR simplified abstract (SK hynix Inc.)
- 18321001. MEMORY DEVICE INCLUDING THREE DIMENSIONAL ARRAY STRUCTURE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18321576. PAGE BUFFER, MEMORY DEVICE INCLUDING PAGE BUFFER AND MEMORY SYSTEM INCLUDING MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18325730. MEMORY DEVICE PERFORMING READ OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18326024. MEMORY INCLUDING MEMORY CELLS HAVING DIFFERENT SIZES simplified abstract (SK hynix Inc.)
- 18326781. MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18327759. METHOD OF OPERATING A CONTROLLER AND A MEMORY DEVICE RELATED TO RECOVERING DATA simplified abstract (SK hynix Inc.)
- 18333366. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18337589. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18337605. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18355090. ENHANCED READ RETRY (ERR) FOR DATA RECOVERY IN FLASH MEMORY simplified abstract (WESTERN DIGITAL TECHNOLOGIES, INC.)
- 18356222. MEMORY DEVICE FOR PERFORMING READ OPERATION AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18361132. NONVOLATILE MEMORY INCLUDING ON-DIE-TERMINATION CIRCUIT AND STORAGE DEVICE INCLUDING THE NONVOLATILE MEMORY simplified abstract (Samsung Electronics Co., Ltd.)
- 18362952. MEMORY CIRCUIT AND METHOD OF OPERATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18372949. STORAGE DEVICE AND STORAGE SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18374717. OPERATING METHOD OF A NONVOLATILE MEMORY DEVICE FOR PROGRAMMING MULTI-PAGE DATA simplified abstract (Samsung Electronics Co., Ltd.)
- 18378540. MEMORY DEVICE THAT PERFORMS ERASE OPERATION TO PRESERVE DATA RELIABILITY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18379440. MEMORY DEVICE SENSORS simplified abstract (Micron Technology, Inc.)
- 18392161. Matrix-Vector Multiplications Based on Charge-Summing Memory Cell Strings simplified abstract (IMEC VZW)
- 18395336. OPERATION METHOD FOR MEMORY, MEMORY, MEMORY SYSTEM AND ELECTRONIC SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18401251. USING DUPLICATE DATA FOR IMPROVING ERROR CORRECTION CAPABILITY simplified abstract (Micron Technology, Inc.)
- 18404742. ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18408923. MEMORY DEVICE AND OPERATION METHOD THEREOF, MEMORY SYSTEM, AND STORAGE MEDIUM (Yangtze Memory Technologies Co., Ltd.)
- 18409344. MEMORY DEVICE INCLUDING STRING SELECT TRANSISTORS HAVING DIFFERENT THRESHOLD VOLTAGES AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18413596. SEMICONDUCTOR DEVICE INCLUDING CHARGE RETENTION NODE (SK hynix Inc.)
- 18423161. MEMORY DEVICE PERFORMING SIGNED MULTIPLICATION USING LOGICAL STATES OF MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18423174. MEMORY DEVICE FOR SUMMATION OF OUTPUTS OF SIGNED MULTIPLICATIONS simplified abstract (Micron Technology, Inc.)
- 18424043. OPERATION METHOD OF MEMORY SYSTEM, DATA READ METHOD OF MEMORY AND MEMORY SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18429753. OPTIMIZING READ ERROR HANDLING IN A MEMORY SUB-SYSTEM simplified abstract (Micron Technology, Inc.)
- 18438208. MEMORY CONTROLLER, MEMORY SYSTEM AND OPERATION METHOD THEREOF (Yangtze Memory Technologies Co., Ltd.)
- 18438636. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18450607. MEMORY SYSTEM AND NON-VOLATILE MEMORY simplified abstract (Kioxia Corporation)
- 18454144. SETTING OPTIMAL THRESHOLD VOLTAGES FOR READING DATA FROM A MEMORY DEVICE BASED ON A CHANNEL DISTRIBUTION (SAMSUNG ELECTRONICS CO., LTD.)
- 18455575. MEMORY SYSTEM HAVING A NON-VOLATILE MEMORY AND A CONTROLLER CONFIGURED TO SWITCH A MODE FOR CONTROLLING AN ACCESS OPERATION TO THE NON-VOLATILE MEMORY simplified abstract (Kioxia Corporation)
- 18458071. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18460030. DATA LATCH CIRCUIT, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18462290. SEMICONDUCTOR STORAGE DEVICE AND OPERATING METHOD OF SEMICONDUCTOR STORAGE DEVICE simplified abstract (SK hynix Inc.)
- 18465541. METHOD OF OPERATING MEMORY DEVICE AND MEMORY DEVICE PERFORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18467005. DATA PATH OSCILLATOR MISMATCH ERROR REDUCTION FOR NON-VOLATILE MEMORY (Western Digital Technologies, Inc.)
- 18470931. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18489454. VOLTAGE REGULATOR SUPPLY FOR INDEPENDENT WORDLINE READS simplified abstract (Micron Technology, Inc.)
- 18491966. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18504093. MEMORY DEVICE INCLUDING PASS TRANSISTOR CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)
- 18505983. MEMORY DEVICE FOR INPUTTING AND OUTPUTTING DATA AND A MEMORY SYSTEM INCLUDING THE MEMORY DEVICE AND A MEMORY CONTROLLER (SK hynix Inc.)
- 18506899. MEMORY DEVICE AND METHOD OF OPERATING MEMORY DEVICE (SK hynix Inc.)
- 18509250. MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18522343. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18522829. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18524458. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18524477. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18526634. BLOCK FAMILY-BASED ERROR AVOIDANCE FOR MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18527978. NAND DATA PLACEMENT SCHEMA simplified abstract (Micron Technology, Inc.)
- 18527984. MEMORY SYSTEM AND OPERATION METHOD THEREOF, AND READABLE STORAGE MEDIUM (Yangtze Memory Technologies Co., Ltd.)
- 18528875. STORAGE DEVICE AND OPERATING METHOD OF THE STORAGE DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18531563. METHOD OF OPERATING A MEMORY CONTROLLER, MEMORY CONTROLLER, AND MEMORY SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18532730. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18545888. ENHANCED GRADIENT SEEDING SCHEME DURING A PROGRAM OPERATION IN A MEMORY SUB-SYSTEM simplified abstract (Micron Technology, Inc.)
- 18583197. SLOW-CHARGE-LOSS TRACKING USING FEEDBACK-CONTROL LOOP simplified abstract (Micron Technology, Inc.)
- 18585400. MEMORY SUB-SYSTEM WITH DYNAMIC CALIBRATION USING COMPONENT-BASED FUNCTION(S) simplified abstract (Micron Technology, Inc.)
- 18586134. METHOD AND SYSTEM FOR ACCESSING MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18586360. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18591728. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18593570. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18593979. SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18595909. MEMORY DEVICE AND OPERATION THEREOF simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18598793. SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18601791. INFORMATION PROCESSING APPARATUS AND MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18601810. STORING ONE DATA VALUE BY PROGRAMMING A FIRST MEMORY CELL AND A SECOND MEMORY CELL simplified abstract (Micron Technology, Inc.)
- 18602960. CORRECTIVE READ WITH PARTIAL BLOCK OFFSET IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18604276. FAST BIT ERASE FOR UPPER TAIL TIGHTENING OF THRESHOLD VOLTAGE DISTRIBUTIONS simplified abstract (MICRON TECHNOLOGY, INC.)
- 18604858. MULTI-PROGRAM OF MEMORY CELLS WITHOUT INTERVENING ERASE OPERATIONS simplified abstract (MICRON TECHNOLOGY, INC.)
- 18607850. NON -VOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF (SAMSUNG ELECTRONICS CO., LTD.)
- 18610282. SEMICONDUCTOR MEMORY simplified abstract (Kioxia Corporation)
- 18612239. NONVOLATILE SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18613222. SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18614908. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18631706. VERTICAL MEMORY DEVICES AND METHODS FOR OPERATING THE SAME simplified abstract (Yangtze Memory Technologies Co., LTD.)
- 18636569. MEMORY DEVICE AND PROGRAM OPERATION THEREOF simplified abstract (Yangtze Memory Technologies Co., LTD.)
- 18653241. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18653785. SEMICONDUCTOR STORAGE DEVICE simplified abstract (KIOXIA CORPORATION)
- 18654302. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18657672. READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION simplified abstract (Micron Technology, Inc.)
- 18659845. MEMORY BLOCK CHARACTERISTIC DETERMINATION simplified abstract (Micron Technology, Inc.)
- 18662238. SEMICONDUCTOR MEMORY simplified abstract (KIOXIA CORPORATION)
- 18662971. SEMICONDUCTOR MEMORY DEVICE simplified abstract (KIOXIA CORPORATION)
- 18666063. PROGRAMMING DELAY SCHEME FOR IN A MEMORY SUB-SYSTEM BASED ON MEMORY RELIABILITY simplified abstract (Micron Technology, Inc.)
- 18666819. NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND READ METHOD OF MEMORY SYSTEM simplified abstract (SK hynix Inc.)
- 18666886. SEMICONDUCTOR MEMORY DEVICE TO HOLD 5-BITS OF DATA PER MEMORY CELL simplified abstract (Kioxia Corporation)
- 18668021. ONE-LADDER READ OF MEMORY CELLS COARSELY PROGRAMMED VIA INTERLEAVED TWO-PASS DATA PROGRAMMING TECHNIQUES simplified abstract (Micron Technology, Inc.)
- 18669140. MULTI-STATE PROGRAMMING OF MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18671846. CONCURRENT PAGE CACHE RESOURCE ACCESS IN A MULTI-PLANE MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18672202. SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18672640. ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18675257. MEMORY SYSTEM AND MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18677727. MEMORY SYSTEM, CONTROL METHOD THEREOF, AND PROGRAM simplified abstract (Kioxia Corporation)
- 18678949. Classification of Error Rate of Data Retrieved from Memory Cells simplified abstract (Micron Technology, Inc.)
- 18732004. MEMORY DEVICE AND OPERATING METHOD THEREOF (SAMSUNG ELECTRONICS CO., LTD.)
- 18732188. SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18733520. MEMORY DEVICE USING MULTI-PILLAR MEMORY CELLS FOR MATRIX VECTOR MULTIPLICATION (Micron Technology, Inc.)
- 18734833. NONVOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE, AND OPERATING METHOD OF STORAGE DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18740905. MEMORY DEVICE (Kioxia Corporation)
- 18742191. FLASH MEMORY DEVICE AND METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18749001. NON-VOLATILE MEMORY DEVICE simplified abstract (ROHM CO., LTD.)
- 18752086. TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18755062. PERFORMING DATA INTEGRITY CHECKS TO IDENTIFY DEFECTIVE WORDLINES simplified abstract (Micron Technology, Inc.)
- 18758496. ADAPTIVE TEMPERATURE COMPENSATION FOR A MEMORY DEVICE (Micron Technology, Inc.)
- 18798155. MEMORY SYSTEM AND CONTROL METHOD THEREOF (Kioxia Corporation)
- 18804617. MEMORY DEVICE, MEMORY SYSTEM, AND OPERATING METHOD OF MEMORY DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18811059. INTERCONNECTIONS FOR 3D MEMORY (Micron Technology, Inc.)
- 18813261. MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE (SK hynix Inc.)
- 18815433. NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH PERFORMS IMPROVED ERASE OPERATION (Kioxia Corporation)
- 18815516. MEMORY SYSTEM (Kioxia Corporation)
- 18818527. SEMICONDUCTOR STORAGE DEVICE (Kioxia Corporation)
- 18819725. Low Power State Implementation in a Power Management Circuit (Lodestar Licensing Group LLC)
- 18821670. SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM (Kioxia Corporation)
- 18829434. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18888899. Weight Calibration Check for Integrated Circuit Devices having Analog Inference Capability (Micron Technology, Inc.)
- 18895236. READ COUNTER ADJUSTMENT FOR DELAYING READ DISTURB SCANS (Micron Technology, Inc.)
- 18945678. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18946968. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18948283. COLUMN CONTROL CIRCUITS AND STORAGE DEVICES (CXMT CORPORATION)
- 18949444. MEMORY CIRCUITS AND DEVICES, AND METHODS THEREOF (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18956073. SEMICONDUCTOR STORAGE DEVICE (Kioxia Corporation)
- 18958121. ELIMINATING WRITE DISTURB FOR SYSTEM METADATA IN A MEMORY SUB-SYSTEM (Micron Technology, Inc.)
- 18959467. BEST READ REFERENCE VOLTAGE SEARCH OF 3D NAND MEMORY (Yangtze Memory Technologies Co., Ltd.)
- 18960230. SEMICONDUCTOR STORAGE DEVICE (Kioxia Corporation)
- 18967232. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18972699. MEMORY DEVICE PROCESSING (Lodestar Licensing Group LLC)
