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Category:G11C16/16
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This category has the following 47 subcategories, out of 47 total.
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Pages in category "G11C16/16"
The following 131 pages are in this category, out of 131 total.
1
- 17712238. SEMICONDUCTOR MEMORY DEVICE AND STORAGE SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17742874. NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17744942. SEMICONDUCTOR DEVICE PERFORMING BLOCK PROGRAM AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 17823191. PARTIAL BLOCK READ VOLTAGE OFFSET simplified abstract (Micron Technology, Inc.)
- 17831350. MEMORY BLOCK CHARACTERISTIC DETERMINATION simplified abstract (Micron Technology, Inc.)
- 17875827. APPARATUS WITH CIRCUIT MANAGEMENT MECHANISM AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 17893755. ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS simplified abstract (Micron Technology, Inc.)
- 17897448. DISCHARGE CIRCUITS simplified abstract (Micron Technology, Inc.)
- 17898043. NAND DETECT EMPTY PAGE SCAN simplified abstract (Micron Technology, Inc.)
- 17931935. SUSPENDING MEMORY ERASE OPERATIONS TO PERFORM HIGHER PRIORITY MEMORY COMMANDS simplified abstract (Micron Technology, Inc.)
- 17942977. READ LEVEL COMPENSATION FOR PARTIALLY PROGRAMMED BLOCKS OF MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17983705. SEMICONDUCTOR DEVICE FOR IMPROVING RETENTION PERFORMANCE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18057386. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18079433. OPERATION METHOD OF NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18088046. NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18231127. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18235183. ERASE PULSE LOOP DEPENDENT ADJUSTMENT OF SELECT GATE ERASE BIAS VOLTAGE simplified abstract (Micron Technology, Inc.)
- 18310290. SEMICONDUCTOR DEVICE FOR PROGRAMMING OR ERASING SELECT TRANSISTORS AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18315311. INTERFACES BETWEEN HIGHER VOLTAGE AND LOWER VOLTAGE WAFERS AND RELATED APPARATUSES AND METHODS simplified abstract (Micron Technology, Inc.)
- 18325808. MEMORY DEVICE PERFORMING ERASE OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18356522. NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING DEFECTIVE MEMORY CELL BLOCK OF NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18358651. NON-VOLATILE MEMORY WITH INTELLIGENT ERASE TESTING TO AVOID NEIGHBOR PLANE DISTURB simplified abstract (Western Digital Technologies, Inc.)
- 18375173. SEMICONDUCTOR MEMORY DEVICES AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18378540. MEMORY DEVICE THAT PERFORMS ERASE OPERATION TO PRESERVE DATA RELIABILITY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18399872. STORAGE DEVICES THAT SUPPORT SUB-BLOCK RECLAIM OPERATIONS THEREIN UPON DETECTION OF UNCORRECTABLE ERRORS (Samsung Electronics Co., Ltd.)
- 18409344. MEMORY DEVICE INCLUDING STRING SELECT TRANSISTORS HAVING DIFFERENT THRESHOLD VOLTAGES AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18411348. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE (SK hynix Inc.)
- 18437123. MEMORY DEVICE, OPERATION METHOD THEREOF, AND READABLE STORAGE MEDIUM (Yangtze Memory Technologies Co., Ltd.)
- 18459745. STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18509301. DATA STORAGE DEVICE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18517429. MEMORY DEVICES SUPPORTING ENHANCED GATE-INDUCED DRAIN LEAKAGE (GIDL) ERASE OPERATION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18517541. CONTROLLING ERASE-TO-PROGRAM DELAY FOR IMPROVING DATA RETENTION simplified abstract (Micron Technology, Inc.)
- 18522343. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18528214. METHOD FOR OPERATING A MEMORY, A MEMORY AND A MEMORY SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18528337. DEBIASING SCHEME FOR PARTIAL BLOCK ERASE BASED ON WORD LINE GROUPS simplified abstract (Micron Technology, Inc.)
- 18537344. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18540068. MEMORY OPERATING METHOD, MEMORY AND MEMORY SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18590836. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18598988. STORAGE DEVICE AND OPERATING METHOD THEREOF (Samsung Electronics Co., Ltd.)
- 18599848. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18604276. FAST BIT ERASE FOR UPPER TAIL TIGHTENING OF THRESHOLD VOLTAGE DISTRIBUTIONS simplified abstract (MICRON TECHNOLOGY, INC.)
- 18610282. SEMICONDUCTOR MEMORY simplified abstract (Kioxia Corporation)
- 18612239. NONVOLATILE SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18653241. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18659845. MEMORY BLOCK CHARACTERISTIC DETERMINATION simplified abstract (Micron Technology, Inc.)
- 18662971. SEMICONDUCTOR MEMORY DEVICE simplified abstract (KIOXIA CORPORATION)
- 18677536. BLOCK SELECTION CIRCUIT CONTROLLING SERIES CONNECTED PASS TRANSISTORS AND FLASH MEMORY INCLUDING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18768970. SELECTIVELY ERASING ONE OF MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING USING GATE INDUCED DRAIN LEAKAGE (Micron Technology, Inc.)
- 18784022. ALTERNATIVE ERASE SCHEMES FOR RELIABILITY-RISK WORD LINES (Micron Technology, Inc.)
- 18811059. INTERCONNECTIONS FOR 3D MEMORY (Micron Technology, Inc.)
- 18815433. NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH PERFORMS IMPROVED ERASE OPERATION (Kioxia Corporation)
- 18888253. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18937365. WRITE PERFORMANCE OPTIMIZATION FOR ERASE ON DEMAND (Micron Technology, Inc.)
- 18960230. SEMICONDUCTOR STORAGE DEVICE (Kioxia Corporation)
- 18960340. ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS (Micron Technology, Inc.)
- 18964133. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
K
- Kioxia corporation (20240094957). MEMORY SYSTEM simplified abstract
- Kioxia corporation (20240096422). STORAGE DEVICE simplified abstract
- Kioxia corporation (20240296893). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240304257). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240321367). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240324250). SEMICONDUCTOR MEMORY simplified abstract
- Kioxia corporation (20240420774). NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH PERFORMS IMPROVED ERASE OPERATION
- Kioxia corporation (20240428870). SEMICONDUCTOR MEMORY DEVICE AND DATA ERASING METHOD
- Kioxia corporation (20250095741). SEMICONDUCTOR MEMORY DEVICE
- Kioxia Corporation patent applications on December 19th, 2024
- Kioxia Corporation patent applications on December 26th, 2024
- Kioxia Corporation patent applications on March 20th, 2025
- Kioxia Corporation patent applications on March 21st, 2024
- Kioxia Corporation patent applications on September 12th, 2024
- Kioxia Corporation patent applications on September 26th, 2024
- KIOXIA CORPORATION patent applications on September 5th, 2024
M
- Micron technology, inc. (20240127900). PERFORMING SELECTIVE COPYBACK IN MEMORY DEVICES simplified abstract
- Micron technology, inc. (20240185926). WRITING USER DATA INTO STORAGE MEMORY simplified abstract
- Micron technology, inc. (20240194270). DEBIASING SCHEME FOR PARTIAL BLOCK ERASE BASED ON WORD LINE GROUPS simplified abstract
- Micron technology, inc. (20240221841). FAST BIT ERASE FOR UPPER TAIL TIGHTENING OF THRESHOLD VOLTAGE DISTRIBUTIONS simplified abstract
- Micron technology, inc. (20240242768). CONTROLLING ERASE-TO-PROGRAM DELAY FOR IMPROVING DATA RETENTION simplified abstract
- Micron technology, inc. (20240265989). TRACKING AND REFRESHING STATE METRICS IN MEMORY SUB-SYSTEMS simplified abstract
- Micron technology, inc. (20240290392). DECK-BASED ERASE FUNCTION simplified abstract
- Micron technology, inc. (20240290406). MEMORY DEVICE WEAR LEVELING simplified abstract
- Micron technology, inc. (20240296892). MEMORY BLOCK CHARACTERISTIC DETERMINATION simplified abstract
- Micron technology, inc. (20250006275). SENSE VOLTAGE ADJUSTMENT AMONG MULTIPLE ERASE BLOCKS
- Micron technology, inc. (20250069669). WRITE PERFORMANCE OPTIMIZATION FOR ERASE ON DEMAND
- Micron technology, inc. (20250087249). INTERCONNECTIONS FOR 3D MEMORY
- Micron technology, inc. (20250087275). SELECTIVELY ERASING ONE OF MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING USING GATE INDUCED DRAIN LEAKAGE
- Micron technology, inc. (20250087276). ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS
- Micron technology, inc. (20250087277). ALTERNATIVE ERASE SCHEMES FOR RELIABILITY-RISK WORD LINES
- Micron Technology, Inc. patent applications on April 18th, 2024
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on August 8th, 2024
- Micron Technology, Inc. patent applications on February 1st, 2024
- Micron Technology, Inc. patent applications on February 27th, 2025
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on February 6th, 2025
- Micron Technology, Inc. patent applications on January 2nd, 2025
- Micron Technology, Inc. patent applications on July 18th, 2024
- MICRON TECHNOLOGY, INC. patent applications on July 4th, 2024
- Micron Technology, Inc. patent applications on June 13th, 2024
- Micron Technology, Inc. patent applications on June 6th, 2024
- Micron Technology, Inc. patent applications on March 13th, 2025
- Micron Technology, Inc. patent applications on March 14th, 2024
- Micron Technology, Inc. patent applications on September 5th, 2024
S
- Samsung electronics co., ltd. (20240194268). MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240194269). MEMORY DEVICES SUPPORTING ENHANCED GATE-INDUCED DRAIN LEAKAGE (GIDL) ERASE OPERATION simplified abstract
- Samsung electronics co., ltd. (20240255564). BONDING QUALITY TEST METHOD, BONDING QUALITY TEST CIRCUIT, AND MEMORY DEVICE INCLUDING BONDING QUALITY TEST CIRCUIT simplified abstract
- Samsung electronics co., ltd. (20240282383). MEMORY DEVICE INCLUDING STRING SELECT TRANSISTORS HAVING DIFFERENT THRESHOLD VOLTAGES AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240306402). SEMICONDUCTOR MEMORY DEVICES AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240331782). NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME simplified abstract
- Samsung electronics co., ltd. (20250014658). STORAGE DEVICE AND OPERATING METHOD THEREOF
- Samsung electronics co., ltd. (20250014670). STORAGE DEVICES THAT SUPPORT SUB-BLOCK RECLAIM OPERATIONS THEREIN UPON DETECTION OF UNCORRECTABLE ERRORS
- Samsung electronics co., ltd. (20250095745). BLOCK SELECTION CIRCUIT CONTROLLING SERIES CONNECTED PASS TRANSISTORS AND FLASH MEMORY INCLUDING THE SAME
- Samsung Electronics Co., Ltd. patent applications on August 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on August 22nd, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 9th, 2025
- Samsung Electronics Co., Ltd. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 13th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 20th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 20th, 2025
- Samsung Electronics Co., Ltd. patent applications on October 3rd, 2024
- Samsung Electronics Co., Ltd. patent applications on September 12th, 2024
- Sk hynix inc. (20240177783). SEMICONDUCTOR DEVICE FOR PROGRAMMING OR ERASING SELECT TRANSISTORS AND METHOD OF OPERATING THE SAME simplified abstract
- Sk hynix inc. (20240282394). MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract
- Sk hynix inc. (20250087271). SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE
- SK hynix Inc. patent applications on August 22nd, 2024
- SK hynix Inc. patent applications on March 13th, 2025
- SK hynix Inc. patent applications on May 30th, 2024
W
- Western digital technologies, inc. (20250006244). ASYMMETRIC PASS VOLTAGE SCHEME FOR NON-VOLATILE MEMORY APPARATUS SIZE REDUCTION
- Western digital technologies, inc. (20250006278). ERASE TECHNIQUES USING ANALOG BITSCAN IN A MEMORY DEVICE
- Western Digital Technologies, Inc. patent applications on January 2nd, 2025
