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Category:G11C16/12
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This category has the following 7 subcategories, out of 7 total.
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Pages in category "G11C16/12"
The following 73 pages are in this category, out of 73 total.
1
- 17831266. CELL VOLTAGE DROP COMPENSATION CIRCUIT simplified abstract (Micron Technology, Inc.)
- 17854163. MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17887348. INDEPENDENT SENSING TIMES simplified abstract (Micron Technology, Inc.)
- 17888298. STORING BITS WITH CELLS IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17938153. APPARATUS WITH READ LEVEL MANAGEMENT AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 17940945. Weight Calibration Check for Integrated Circuit Devices having Analog Inference Capability simplified abstract (Micron Technology, Inc.)
- 17948556. DRIFT COMPENSATION FOR CODEWORDS IN MEMORY simplified abstract (Micron Technology, Inc.)
- 17982081. FLASH MEMORY DEVICE HAVING MULTI-STACK STRUCTURE AND CHANNEL SEPARATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18170893. NON-VOLATILE MEMORY DEVICE DETERMINING READ RECLAIM, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18172306. ARTIFICIAL NEURAL NETWORK OPERATION CIRCUIT AND IN-MEMORY COMPUTATION DEVICE THEREOF simplified abstract (MACRONIX INTERNATIONAL CO., LTD.)
- 18193474. MEMORY DEVICE FOR PERFORMING PROGRAM OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18217087. CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18229705. READ POWER SAVINGS BY TEMPORARILY DISABLING BITLINE VOLTAGE (Western Digital Technologies, Inc.)
- 18237309. INTEGRATED FLAG BYTE READ DURING FAILED BYTE COUNT READ COMPENSATION IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18237793. MEMORY DEVICE AND METHOD FOR PERFORMING CACHE PROGRAM ON MEMORY DEVICE simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18239193. MEMORY DEVICES WITH PROGRAM VERIFY LEVELS BASED ON COMPENSATION VALUES simplified abstract (Micron Technology, Inc.)
- 18317670. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18320200. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18325730. MEMORY DEVICE PERFORMING READ OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18346782. MEMORY DEVICE FOR PERFORMING PROGRAM OPERATION INCLUDING PROGRAM LOOPS AND METHOD OF OPERATING THE SAME simplified abstract (SK Hynix Inc.)
- 18357436. NON-VOLATILE MEMORY WITH ADAPTIVE DUMMY WORD LINE BIAS simplified abstract (SanDisk Technologies LLC)
- 18384681. FLASH MEMORY REDUCING PROGRAM RISING TIME AND PROGRAM METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18411532. DRAIN-SIDE WORDLINE VOLTAGE BOOSTING TO REDUCE LATERAL ELECTRON FIELD DURING A PROGRAMMING OPERATION simplified abstract (Micron Technology, Inc.)
- 18515848. MEMORY DEVICE PRE-CHARGING COMMON SOURCE LINE AND OPERATING METHOD OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18669140. MULTI-STATE PROGRAMMING OF MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18771479. ACCESS LINE VOLTAGE RAMP RATE ADJUSTMENT (Micron Technology, Inc.)
- 18814030. MEMORY DEVICE FOR PROGRAM DISTURBANCE SUPPRESSION AND PROGRAMMING METHOD THEREOF (SAMSUNG ELECTRONICS CO., LTD.)
- 18821402. SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM, AND CONTROL METHOD (Kioxia Corporation)
- 18888899. Weight Calibration Check for Integrated Circuit Devices having Analog Inference Capability (Micron Technology, Inc.)
- 18959467. BEST READ REFERENCE VOLTAGE SEARCH OF 3D NAND MEMORY (Yangtze Memory Technologies Co., Ltd.)
- 18967011. DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT (Micron Technology, Inc.)
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- Micron technology, inc. (20240249776). DRAIN-SIDE WORDLINE VOLTAGE BOOSTING TO REDUCE LATERAL ELECTRON FIELD DURING A PROGRAMMING OPERATION simplified abstract
- Micron technology, inc. (20240290391). COMPLEX PAGE ACCESS IN MEMORY DEVICES simplified abstract
- Micron technology, inc. (20240312534). MULTI-STATE PROGRAMMING OF MEMORY CELLS simplified abstract
- Micron technology, inc. (20250014649). Weight Calibration Check for Integrated Circuit Devices having Analog Inference Capability
- Micron technology, inc. (20250087283). ACCESS LINE VOLTAGE RAMP RATE ADJUSTMENT
- Micron technology, inc. (20250095746). DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on February 15th, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on January 9th, 2025
- Micron Technology, Inc. patent applications on July 25th, 2024
- Micron Technology, Inc. patent applications on March 13th, 2025
- Micron Technology, Inc. patent applications on March 14th, 2024
- Micron Technology, Inc. patent applications on March 20th, 2025
- Micron Technology, Inc. patent applications on September 19th, 2024
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- Samsung electronics co., ltd. (20240127865). CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240221836). MEMORY DEVICE PRE-CHARGING COMMON SOURCE LINE AND OPERATING METHOD OF THE SAME simplified abstract
- Samsung electronics co., ltd. (20240274206). NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240304263). FLASH MEMORY REDUCING PROGRAM RISING TIME AND PROGRAM METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20250069668). MEMORY DEVICE FOR PROGRAM DISTURBANCE SUPPRESSION AND PROGRAMMING METHOD THEREOF
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 15th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 27th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 27th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 4th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 12th, 2024
- Sk hynix inc. (20240161839). MEMORY DEVICE FOR PERFORMING PROGRAM OPERATION AND METHOD OF OPERATING THE SAME simplified abstract
- Sk hynix inc. (20240161841). MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract
- Sk hynix inc. (20240265974). MEMORY DEVICE, OPERATING METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM simplified abstract
- SK hynix Inc. patent applications on August 8th, 2024
- SK hynix Inc. patent applications on May 16th, 2024